IL106130A - Detector with minimal stripe transport of quantum sources and a method for detecting electromagnetic radiation - Google Patents
Detector with minimal stripe transport of quantum sources and a method for detecting electromagnetic radiationInfo
- Publication number
- IL106130A IL106130A IL10613093A IL10613093A IL106130A IL 106130 A IL106130 A IL 106130A IL 10613093 A IL10613093 A IL 10613093A IL 10613093 A IL10613093 A IL 10613093A IL 106130 A IL106130 A IL 106130A
- Authority
- IL
- Israel
- Prior art keywords
- quantum well
- detector
- miniband
- layers
- states
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000000034 method Methods 0.000 title description 15
- 230000005670 electromagnetic radiation Effects 0.000 title description 5
- 230000004888 barrier function Effects 0.000 claims description 76
- 239000000969 carrier Substances 0.000 claims description 37
- 238000010521 absorption reaction Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 230000005281 excited state Effects 0.000 description 84
- 230000004044 response Effects 0.000 description 40
- 239000000203 mixture Substances 0.000 description 32
- 238000000862 absorption spectrum Methods 0.000 description 28
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 27
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 26
- 230000005283 ground state Effects 0.000 description 25
- 230000005428 wave function Effects 0.000 description 20
- 230000007704 transition Effects 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 12
- 238000001228 spectrum Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 230000005641 tunneling Effects 0.000 description 10
- 230000003595 spectral effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 238000003491 array Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- 230000004807 localization Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000007620 mathematical function Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US90641792A | 1992-06-30 | 1992-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL106130A true IL106130A (en) | 1996-10-19 |
Family
ID=25422414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL10613093A IL106130A (en) | 1992-06-30 | 1993-06-24 | Detector with minimal stripe transport of quantum sources and a method for detecting electromagnetic radiation |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0648377B1 (fr) |
| AU (1) | AU4656693A (fr) |
| CA (1) | CA2137568C (fr) |
| DE (1) | DE69329285T2 (fr) |
| IL (1) | IL106130A (fr) |
| WO (1) | WO1994000884A1 (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5519529A (en) * | 1994-02-09 | 1996-05-21 | Martin Marietta Corporation | Infrared image converter |
| GB2298735A (en) * | 1995-03-08 | 1996-09-11 | Sharp Kk | Semiconductor device having a miniband |
| SG68636A1 (en) * | 1997-09-27 | 1999-11-16 | Univ Singapore | Dual band infrared detector using step multiquantum wells with superlattice barriers |
| US6818916B2 (en) | 1998-12-17 | 2004-11-16 | Canare Electric Co., Ltd. | Light-receiving device with quantum-wave interference layers |
| GB2507291A (en) * | 2012-10-24 | 2014-04-30 | Sharp Kk | High operating temperature resonant tunnelling quantum well photodetector |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992008250A1 (fr) * | 1990-10-31 | 1992-05-14 | Martin Marietta Corporation | Detecteur a infrarouge a puits quantiques et a transport de minibande |
-
1993
- 1993-06-24 IL IL10613093A patent/IL106130A/en not_active IP Right Cessation
- 1993-06-29 WO PCT/US1993/006193 patent/WO1994000884A1/fr active IP Right Grant
- 1993-06-29 CA CA 2137568 patent/CA2137568C/fr not_active Expired - Fee Related
- 1993-06-29 DE DE69329285T patent/DE69329285T2/de not_active Expired - Fee Related
- 1993-06-29 EP EP93916853A patent/EP0648377B1/fr not_active Expired - Lifetime
- 1993-06-29 AU AU46566/93A patent/AU4656693A/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| DE69329285T2 (de) | 2001-04-05 |
| CA2137568C (fr) | 1998-09-29 |
| AU4656693A (en) | 1994-01-24 |
| EP0648377B1 (fr) | 2000-08-23 |
| WO1994000884A1 (fr) | 1994-01-06 |
| CA2137568A1 (fr) | 1994-01-06 |
| EP0648377A1 (fr) | 1995-04-19 |
| DE69329285D1 (de) | 2000-09-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| EXP | Patent expired |