IL104266A - Device and method for creating a graded lattice in a semiconductor laser diode device, with surface emission and distributed feedback - Google Patents
Device and method for creating a graded lattice in a semiconductor laser diode device, with surface emission and distributed feedbackInfo
- Publication number
- IL104266A IL104266A IL10426692A IL10426692A IL104266A IL 104266 A IL104266 A IL 104266A IL 10426692 A IL10426692 A IL 10426692A IL 10426692 A IL10426692 A IL 10426692A IL 104266 A IL104266 A IL 104266A
- Authority
- IL
- Israel
- Prior art keywords
- monochromatic light
- light beam
- wavefront
- providing
- face
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 239000000463 material Substances 0.000 claims description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 230000001066 destructive effect Effects 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 238000001914 filtration Methods 0.000 claims description 8
- 239000012530 fluid Substances 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 4
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000003801 milling Methods 0.000 claims 1
- 238000005253 cladding Methods 0.000 description 10
- 239000010931 gold Substances 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 238000000992 sputter etching Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000003486 chemical etching Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/822,253 US5238531A (en) | 1992-01-17 | 1992-01-17 | Apparatus and method for fabricating a chirped grating in a surface emitting distributed feedback semiconductor laser diode device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL104266A0 IL104266A0 (en) | 1993-05-13 |
| IL104266A true IL104266A (en) | 1994-11-28 |
Family
ID=25235579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL10426692A IL104266A (en) | 1992-01-17 | 1992-12-29 | Device and method for creating a graded lattice in a semiconductor laser diode device, with surface emission and distributed feedback |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5238531A (ja) |
| EP (1) | EP0552028A1 (ja) |
| JP (1) | JP2723438B2 (ja) |
| KR (1) | KR930017251A (ja) |
| IL (1) | IL104266A (ja) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5361272A (en) * | 1992-09-18 | 1994-11-01 | Stephen Krissman | Semiconductor architecture and application thereof |
| US5867521A (en) * | 1992-11-12 | 1999-02-02 | Raytheon Company | Curved grating surface-emitting distributed feedback laser |
| DE69520132T2 (de) * | 1994-04-19 | 2001-10-04 | Raytheon Co., El Segundo | Oberflächenemittierender laser mit verteilter rückkopplung und gekrümmtem gitter |
| US5610930A (en) * | 1995-03-02 | 1997-03-11 | Hughes Aircraft Company | Voltage adding diode laser array |
| US6219369B1 (en) | 1997-06-09 | 2001-04-17 | Laserfare Advanced Technology Group | Phased matched surface emitting diode laser |
| FR2778750B1 (fr) * | 1998-05-12 | 2003-05-09 | Commissariat Energie Atomique | Procede d'inscription de reseaux de bragg, appareil pour la mise en oeuvre de ce procede et dispositif a reseaux de bragg obtenus par ce procede |
| US6221739B1 (en) | 1998-08-20 | 2001-04-24 | Vladimir A. Gorelik | Method for bonding single crystal membranes to a curved surface |
| US7457340B2 (en) * | 2002-01-18 | 2008-11-25 | Wisconsin Alumni Research Foundation | High coherent power, two-dimensional surface-emitting semiconductor diode array laser |
| US7408966B2 (en) * | 2006-08-18 | 2008-08-05 | Wisconsin Alumni Research Foundation | Intersubband quantum box stack lasers |
| CA2754572C (en) | 2009-03-05 | 2017-10-24 | Pressco Technology, Inc. | Digital heat injection by way of surface emitting semi-conductor devices |
| US10712500B2 (en) * | 2018-10-17 | 2020-07-14 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and manufacturing method of the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2629671B2 (ja) * | 1984-10-09 | 1997-07-09 | 松下電器産業株式会社 | ホログラフイツク露光方法 |
| US4777148A (en) * | 1985-01-30 | 1988-10-11 | Massachusetts Institute Of Technology | Process for making a mesa GaInAsP/InP distributed feedback laser |
| US4701995A (en) * | 1986-10-29 | 1987-10-27 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method of making a nonplanar buried-heterostructure distributed-feedback laser |
| GB2203892A (en) * | 1987-04-24 | 1988-10-26 | Philips Electronic Associated | A method of etching a semiconductor body |
-
1992
- 1992-01-17 US US07/822,253 patent/US5238531A/en not_active Expired - Lifetime
- 1992-12-29 IL IL10426692A patent/IL104266A/en not_active IP Right Cessation
-
1993
- 1993-01-14 EP EP93300204A patent/EP0552028A1/en not_active Withdrawn
- 1993-01-16 KR KR1019930000531A patent/KR930017251A/ko not_active Application Discontinuation
- 1993-01-18 JP JP5006212A patent/JP2723438B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0552028A1 (en) | 1993-07-21 |
| US5238531A (en) | 1993-08-24 |
| JPH05259575A (ja) | 1993-10-08 |
| KR930017251A (ko) | 1993-08-30 |
| JP2723438B2 (ja) | 1998-03-09 |
| IL104266A0 (en) | 1993-05-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100293608B1 (ko) | 광센싱장치 | |
| US5070509A (en) | Surface emitting, low threshold (SELTH) laser diode | |
| EP0614255B1 (en) | Article comprising a focusing surface emitting semiconductor laser | |
| KR101014412B1 (ko) | 면발광형 반도체 레이저소자 | |
| US20050123016A1 (en) | Surface emitting and receiving photonic device with lens | |
| TWI483498B (zh) | 多模式垂直空腔表面發射雷射陣列 | |
| US20020191666A1 (en) | Tungsten diode contact | |
| US8014434B2 (en) | Multiple cavity etched-facet DFB lasers | |
| JPH09172227A (ja) | 光電子量子井戸装置 | |
| US5238531A (en) | Apparatus and method for fabricating a chirped grating in a surface emitting distributed feedback semiconductor laser diode device | |
| EP1980000A2 (en) | Vertical cavity surface emitting laser device | |
| US6869479B2 (en) | Method of laser-assisted fabrication of optoelectronic and photonic components | |
| EP0670618B1 (en) | Light-sensing device using a semiconductor laser | |
| US5373173A (en) | Apparatus for semiconductor laser | |
| US5307183A (en) | Apparatus and method for fabricating a curved grating in a surface emitting distributed feedback semiconductor laser diode device | |
| US20230378720A1 (en) | Vertical laser emitter and manufacturing method thereof | |
| US20020192850A1 (en) | Laser diode graded index layer doping | |
| US20080198890A1 (en) | Vertically emitting laser and method of making the same | |
| Dzurko et al. | Single mode broad area distributed Bragg reflector ring oscillators | |
| Hagberg et al. | Fabrication of gratings for integrated optoelectronics | |
| WO1995028756A1 (en) | Curved grating surface-emitting distributed feedback laser | |
| O’Brien et al. | High power monolithically integrated diode laser, preamplifier, and coherent beam expander | |
| CN117498155A (zh) | 半导体激光元件及其制造方法 | |
| Capasso et al. | Electron beam lithography for nanofabrication of metal induced Bragg reflectors | |
| Smith et al. | NIR high-efficiency subwavelength diffractive structures in semiconductors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RH | Patent void |