IE33422B1 - Semiconductor device with shock absorbing and passivation means - Google Patents

Semiconductor device with shock absorbing and passivation means

Info

Publication number
IE33422B1
IE33422B1 IE1596/69A IE159669A IE33422B1 IE 33422 B1 IE33422 B1 IE 33422B1 IE 1596/69 A IE1596/69 A IE 1596/69A IE 159669 A IE159669 A IE 159669A IE 33422 B1 IE33422 B1 IE 33422B1
Authority
IE
Ireland
Prior art keywords
semi
mil
ohm
resistivity
volts
Prior art date
Application number
IE1596/69A
Other versions
IE33422L (en
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of IE33422L publication Critical patent/IE33422L/en
Publication of IE33422B1 publication Critical patent/IE33422B1/en

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    • H01L2924/351—Thermal stress

Abstract

1288058 Encapsulated semi-conductor devices GENERAL ELECTRIC CO 2 Dec 1969 [9 Dec 1968] 58836/69 Heading H1K Protection is provided for the semi-conductor elements of transistors, thyristors, and rectifiers. The wafers have (bevelled) edges at which PN-junctions emerge and are then passivated with glass layers which have a specific thermal expansion differential with respect to the semiconductor of less than 5 Î 10<SP>-4</SP>, a dielectric strength of at least 975 volts/mil., and a resistivity of at least 10<SP>12</SP> ohm/cm. A layer of pliant material having a dielectric strength of at least 500 volts/mil. and a resistivity of at least 10<SP>12</SP> ohm/cm. surrounds the structure to protect against mechanical shock and fluid penetration. A semi-conductor wafer is preferably bonded to its immediate electrodes with a soft solder having a modulus of elasticity at ambient temperatures of less than 1.1 x 10<SP>7</SP> lbs./sq. inch. The assembly with electrodes and an attached heat sink is then provided with a moulded plastics encapsulation. Glasses cited are borozincates containing (a) Si, Zn, Al, B, and O and (b) Si, Zn B, Ce, Bi, Pb, Sb, and O. Pliant materials suggested are organopolysiloxanes such as silicone rubbers, preferably unfilled. The Specification discloses interesting thyristor and triac structures, the contact system of copending Applications 57692/69 and the header/ heat sink unit of 59854/69. [GB1288058A]
IE1596/69A 1968-12-09 1969-11-26 Semiconductor device with shock absorbing and passivation means IE33422B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78208368A 1968-12-09 1968-12-09

Publications (2)

Publication Number Publication Date
IE33422L IE33422L (en) 1970-06-09
IE33422B1 true IE33422B1 (en) 1974-06-26

Family

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Family Applications (1)

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IE1596/69A IE33422B1 (en) 1968-12-09 1969-11-26 Semiconductor device with shock absorbing and passivation means

Country Status (4)

Country Link
JP (1) JPS4822665B1 (en)
BR (1) BR6914802D0 (en)
GB (1) GB1288058A (en)
IE (1) IE33422B1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2046024B (en) * 1979-03-30 1983-01-26 Ferranti Ltd Circuit assembly
JPS6346042U (en) * 1986-09-10 1988-03-28
WO1999012201A1 (en) * 1997-09-03 1999-03-11 Eupec Europäische Gesellschaft Für Leistungshalbleiter Mbh + Co. Kg Moisture proofing for borate glass semiconductor passivation layers

Also Published As

Publication number Publication date
BR6914802D0 (en) 1973-01-02
GB1288058A (en) 1972-09-06
IE33422L (en) 1970-06-09
JPS4822665B1 (en) 1973-07-07

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