ID27523A - TRANSMISSORS, METHODS FOR MAKING TRANSMITTERS AND METHODS OF MAKING ELEMENTS WHICH EMPLOY ELECTRON-COLD - Google Patents

TRANSMISSORS, METHODS FOR MAKING TRANSMITTERS AND METHODS OF MAKING ELEMENTS WHICH EMPLOY ELECTRON-COLD

Info

Publication number
ID27523A
ID27523A IDW20010695A ID20010695A ID27523A ID 27523 A ID27523 A ID 27523A ID W20010695 A IDW20010695 A ID W20010695A ID 20010695 A ID20010695 A ID 20010695A ID 27523 A ID27523 A ID 27523A
Authority
ID
Indonesia
Prior art keywords
methods
making
transmissors
transmitters
cold
Prior art date
Application number
IDW20010695A
Other languages
Indonesian (id)
Inventor
Tetsuya Norikane
Koichi Hiranaka
Naoki Wada
Yasuyo Sato
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of ID27523A publication Critical patent/ID27523A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H01J1/3044—Point emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
IDW20010695A 1999-06-24 2000-06-23 TRANSMISSORS, METHODS FOR MAKING TRANSMITTERS AND METHODS OF MAKING ELEMENTS WHICH EMPLOY ELECTRON-COLD ID27523A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17850099 1999-06-24

Publications (1)

Publication Number Publication Date
ID27523A true ID27523A (en) 2001-04-12

Family

ID=16049558

Family Applications (1)

Application Number Title Priority Date Filing Date
IDW20010695A ID27523A (en) 1999-06-24 2000-06-23 TRANSMISSORS, METHODS FOR MAKING TRANSMITTERS AND METHODS OF MAKING ELEMENTS WHICH EMPLOY ELECTRON-COLD

Country Status (5)

Country Link
KR (1) KR20010072923A (en)
CN (1) CN1318203A (en)
ID (1) ID27523A (en)
TW (1) TW469463B (en)
WO (1) WO2000079556A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4792625B2 (en) * 2000-08-31 2011-10-12 住友電気工業株式会社 Method for manufacturing electron-emitting device and electronic device
KR100926151B1 (en) * 2007-07-18 2009-11-10 한국원자력연구원 Method for preparing carbon nanotube large area emitter by using carbon nanotube-polymer composite
WO2011121778A1 (en) * 2010-03-31 2011-10-06 日新電機株式会社 Thin film polycrystalline silicon and process for production thereof, and plasma device for production of thin film polycrystalline silicon
US9761546B2 (en) * 2015-10-19 2017-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Trap layer substrate stacking technique to improve performance for RF devices

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3033178B2 (en) * 1990-10-30 2000-04-17 ソニー株式会社 Field emission type emitter
US5329207A (en) * 1992-05-13 1994-07-12 Micron Technology, Inc. Field emission structures produced on macro-grain polysilicon substrates
JP3460376B2 (en) * 1995-05-08 2003-10-27 富士電機株式会社 Manufacturing method of micro cold electron source
JP3012517B2 (en) * 1995-05-11 2000-02-21 凸版印刷株式会社 Electron emitting device and method of manufacturing the same
JPH10312736A (en) * 1997-05-13 1998-11-24 Ricoh Co Ltd Electron emitting element and method for forming cathode thereof

Also Published As

Publication number Publication date
KR20010072923A (en) 2001-07-31
TW469463B (en) 2001-12-21
CN1318203A (en) 2001-10-17
WO2000079556A1 (en) 2000-12-28

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