HUT59644A - Process and apparatus for producing gas- and oxide-free ga or in of high purity semiconductor basic material - Google Patents

Process and apparatus for producing gas- and oxide-free ga or in of high purity semiconductor basic material

Info

Publication number
HUT59644A
HUT59644A HU9191A HU9191A HUT59644A HU T59644 A HUT59644 A HU T59644A HU 9191 A HU9191 A HU 9191A HU 9191 A HU9191 A HU 9191A HU T59644 A HUT59644 A HU T59644A
Authority
HU
Hungary
Prior art keywords
temp
base material
vacuum
heating element
sensor
Prior art date
Application number
HU9191A
Other languages
Hungarian (hu)
Other versions
HU910091D0 (en
HU209269B (en
Inventor
Tamas Goeroeg
Gyoergy Reisinger
Oedoen Lendvay
Janos Vitez
Original Assignee
Mta Mueszaki Fiz Kutato Inteze
Ajkai Timfoeldgyar Aluminium
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mta Mueszaki Fiz Kutato Inteze, Ajkai Timfoeldgyar Aluminium filed Critical Mta Mueszaki Fiz Kutato Inteze
Priority to HU9191A priority Critical patent/HU209269B/en
Publication of HU910091D0 publication Critical patent/HU910091D0/en
Publication of HUT59644A publication Critical patent/HUT59644A/en
Publication of HU209269B publication Critical patent/HU209269B/en

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Metallic impurities are at first removed from Ga or In contg. raw materials using conventional methods. Then the Ga or In base material is placed in a high purity quartz, ceramic oxide or pyrolytic boron nitride crucible (6) which is then heated in a vacuum chamber (1) by means of a controlled temp. heating element (20). A vacuum of 5 x 10 mbar is produced and the base material is heated to 100-200 deg.C, and kept at this temp. and vacuum. After this pre-treatment the temp. of the base material is raised to 300-500 deg.C, and maintained with constant vacuum for 4-10 hrs. The base material is then subjected to final treatment. - The proposed equipment comprises a regulated temp. heating element, crucible for base material and a vacuum chamber equipped with vacuum pump system. The heating element (20) is in the form of a plate, located at the bottom of the vacuum chamber (1) and equipped with a temp. sensor (22). A removable heat insulating cylinder (3) is located on the heating element (20). The temp. controller (4) inputs are provided by the heater temp. sensor (22) and the submersible crucible temp. sensor
HU9191A 1991-01-14 1991-01-14 Process and apparatus for producing gas- and oxide-free ga or in of high purity semiconductor basic material HU209269B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
HU9191A HU209269B (en) 1991-01-14 1991-01-14 Process and apparatus for producing gas- and oxide-free ga or in of high purity semiconductor basic material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
HU9191A HU209269B (en) 1991-01-14 1991-01-14 Process and apparatus for producing gas- and oxide-free ga or in of high purity semiconductor basic material

Publications (3)

Publication Number Publication Date
HU910091D0 HU910091D0 (en) 1991-08-28
HUT59644A true HUT59644A (en) 1992-06-29
HU209269B HU209269B (en) 1994-04-28

Family

ID=10947869

Family Applications (1)

Application Number Title Priority Date Filing Date
HU9191A HU209269B (en) 1991-01-14 1991-01-14 Process and apparatus for producing gas- and oxide-free ga or in of high purity semiconductor basic material

Country Status (1)

Country Link
HU (1) HU209269B (en)

Also Published As

Publication number Publication date
HU910091D0 (en) 1991-08-28
HU209269B (en) 1994-04-28

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Legal Events

Date Code Title Description
HMM4 Cancellation of final prot. due to non-payment of fee