HUE040131T2 - Improving memory read stability using selective precharge of bit line sections - Google Patents

Improving memory read stability using selective precharge of bit line sections

Info

Publication number
HUE040131T2
HUE040131T2 HUE08862363A HUE08862363A HUE040131T2 HU E040131 T2 HUE040131 T2 HU E040131T2 HU E08862363 A HUE08862363 A HU E08862363A HU E08862363 A HUE08862363 A HU E08862363A HU E040131 T2 HUE040131 T2 HU E040131T2
Authority
HU
Hungary
Prior art keywords
bit line
memory read
line sections
improving memory
read stability
Prior art date
Application number
HUE08862363A
Other languages
Hungarian (hu)
Inventor
Mohamed H Abu-Rahma
Ritu Chaba
Nan Chen
Sei Seung Yoon
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Priority claimed from US12/334,817 external-priority patent/US8223567B2/en
Publication of HUE040131T2 publication Critical patent/HUE040131T2/en

Links

HUE08862363A 2007-12-15 2008-12-15 Improving memory read stability using selective precharge of bit line sections HUE040131T2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1403807A 2007-12-15 2007-12-15
US12/334,817 US8223567B2 (en) 2007-12-15 2008-12-15 Memory read stability using selective precharge

Publications (1)

Publication Number Publication Date
HUE040131T2 true HUE040131T2 (en) 2019-02-28

Family

ID=63704776

Family Applications (1)

Application Number Title Priority Date Filing Date
HUE08862363A HUE040131T2 (en) 2007-12-15 2008-12-15 Improving memory read stability using selective precharge of bit line sections

Country Status (2)

Country Link
ES (1) ES2685262T3 (en)
HU (1) HUE040131T2 (en)

Also Published As

Publication number Publication date
ES2685262T3 (en) 2018-10-08

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