Claims (14)
1. Pikselna struktura (100) za uporabu u infracrvenom optičkom uređaju, obuhvaća:
supstrat (102); i
bolometar (104) koji obuhvaća:
pretvarač (108) koji je razmaknut u odnosu na navedeni supstrat, pretvarač ima električni otpor koji varira u odgovoru na promjene temperature pretvarača, i
apsorber (110) koji je u termalnoj vezi s pretvaračem i koja dozvoljava da se pretvarač zagrijava zračenjem koje je apsorbirao apsorber,
pri čemu apsorber ima gornju stranu (130) koja definira otvore (112a, 112b) u apsorberu, otvori su prilagođeni da utječu na put širenja dijela zračenja koje je primio apsorber tako da apsorber dio zračenja apsorbira radije nego da ono izađe iz apsorbera,
naznačeno time što je apsorber razmaknut u odnosu na pretvarač i obuhvaća apsorbirajući sloj (124) čija je debljina 10 nanometara ili manja. 1. A pixel structure (100) for use in an infrared optical device, comprising:
substrate (102); and
bolometer (104) comprising:
a transducer (108) spaced from said substrate, the transducer having an electrical resistance that varies in response to changes in the temperature of the transducer, and
an absorber (110) which is in thermal connection with the transducer and which allows the transducer to be heated by the radiation absorbed by the absorber,
wherein the absorber has an upper side (130) defining apertures (112a, 112b) in the absorber, the apertures being adapted to influence the propagation path of a portion of the radiation received by the absorber so that the absorber absorbs a portion of the radiation rather than exiting the absorber,
characterized in that the absorber is spaced relative to the converter and comprises an absorbing layer (124) whose thickness is 10 nanometers or less.
2. Pikselna struktura prema zahtjevu 1, gdje je otvor kanal kroz apsorber.2. Pixel structure according to claim 1, where the opening is a channel through the absorber.
3. Pikselna struktura prema zahtjevu 1, gdje dio zračenja odgovara rasponu valnih duljina i otvor ima širinu manju od raspona valnih duljina. 3. A pixel structure according to claim 1, where part of the radiation corresponds to a range of wavelengths and the aperture has a width smaller than the range of wavelengths.
4. Pikselna struktura prema zahtjevu 1, gdje bolometar dalje obuhvaća reflektor (118) koji se nalazi preko supstrata i ispod pretvarača, gdje se otvor nalazi u odnosu na reflektor tako da otvor utječe na put širenja dijela zračenja koji je odbio reflektor prema apsorberu tako da se odbijeno zračenje apsorbira radije nego da izađe iz apsorbera.4. The pixel structure according to claim 1, wherein the bolometer further comprises a reflector (118) located over the substrate and below the transducer, where the opening is located relative to the reflector such that the opening affects the path of propagation of the part of the radiation that is reflected by the reflector towards the absorber so that the reflected radiation is absorbed rather than leaving the absorber.
5. Pikselna struktura prema zahtjevu 1, gdje absorber prekriva pretvarač u konfiguraciji tipa kišobrana. 5. The pixel structure of claim 1, wherein the absorber covers the transducer in an umbrella-type configuration.
6. Pikselna struktura prema zahtjevu 1, gdje je otvor jedan od više kanala (112a, 112b) kroz apsorber.6. The pixel structure according to claim 1, wherein the opening is one of multiple channels (112a, 112b) through the absorber.
7. Pikselna struktura prema zahtjevu 6, gdje su kanali razmaknuti oko centra apsorbera.7. Pixel structure according to claim 6, where the channels are spaced around the center of the absorber.
8. Pikselna struktura prema zahtjevu 1, gdje je debljina apsorbirajućeg sloja u rasponu od 5 nanometara do 10 nanometara.8. Pixel structure according to claim 1, where the thickness of the absorbing layer is in the range of 5 nanometers to 10 nanometers.
9. Pikselna struktura prema zahtjevu 1, gdje je otvor jedan od više kanala kroz apsorber i razmaknuti su oko apsorbera tako da apsorbirajući sloj ima slojni otpor u rasponu od 350 oma po kvadratu do 1000 oma po kvadratu.9. The pixel structure of claim 1, wherein the aperture is one of a plurality of channels through the absorber and are spaced around the absorber such that the absorbent layer has a sheet resistance ranging from 350 ohms per square to 1000 ohms per square.
10. Pikselna struktura prema zahtjevu 1, gdje je otvor jedan od više kanala kroz apsorber i kanali zajedno zauzimaju trećinu ili više volumena apsorbirajućeg sloja.10. A pixel structure according to claim 1, wherein the opening is one of multiple channels through the absorber and the channels together occupy a third or more of the volume of the absorbing layer.
11. Pikselna struktura prema zahtjevu 1, gdje je otvor jedan od više otvora u apsorberu i ukupna gustoća svih otvora se izabire tako apsorber ima slojni otpor jednak ili veći od 400 oma po kvadratu.11. Pixel structure according to claim 1, where the aperture is one of several apertures in the absorber and the total density of all apertures is selected so that the absorber has a layer resistance equal to or greater than 400 ohms per square.
12. Pikselna struktura prema zahtjevu 1, gdje apsorber obuhvaća bazni sloj (126) koji se nalazi ispod apsorbirajućeg sloja i ima debljinu jednaku ili veću od 90 nanometara.12. The pixel structure according to claim 1, where the absorber comprises a base layer (126) which is located below the absorbing layer and has a thickness equal to or greater than 90 nanometers.
13. Pikselna struktura prema zahtjevu 12, gdje bolometar dalje ima stativ (111) koji se pruža između pretvarača i baznog sloja apsorbera radi potpore apsorbera u tom razmaknutom odnosu s pretvaračem.13. The pixel structure of claim 12, wherein the bolometer further comprises a tripod (111) extending between the transducer and the absorber base layer to support the absorber in said spaced relationship with the transducer.
14. Pikselna struktura prema zahtjevu 1, gdje apsorbirajući sloj sadrži NiCr.14. Pixel structure according to claim 1, where the absorbing layer contains NiCr.