HK47180A - Improvements in or relating to semiconductor devices - Google Patents
Improvements in or relating to semiconductor devicesInfo
- Publication number
- HK47180A HK47180A HK471/80A HK47180A HK47180A HK 47180 A HK47180 A HK 47180A HK 471/80 A HK471/80 A HK 471/80A HK 47180 A HK47180 A HK 47180A HK 47180 A HK47180 A HK 47180A
- Authority
- HK
- Hong Kong
- Prior art keywords
- relating
- semiconductor devices
- semiconductor
- devices
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/096—Lateral transistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US357968A US3873989A (en) | 1973-05-07 | 1973-05-07 | Double-diffused, lateral transistor structure |
Publications (1)
Publication Number | Publication Date |
---|---|
HK47180A true HK47180A (en) | 1980-09-05 |
Family
ID=23407766
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK472/80A HK47280A (en) | 1973-05-07 | 1980-08-28 | Improvements in or relating to the manufacture of transistor structures |
HK471/80A HK47180A (en) | 1973-05-07 | 1980-08-28 | Improvements in or relating to semiconductor devices |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK472/80A HK47280A (en) | 1973-05-07 | 1980-08-28 | Improvements in or relating to the manufacture of transistor structures |
Country Status (8)
Country | Link |
---|---|
US (1) | US3873989A (tr) |
JP (1) | JPS5516457B2 (tr) |
CA (1) | CA994923A (tr) |
DE (1) | DE2420239A1 (tr) |
FR (1) | FR2229140B1 (tr) |
GB (2) | GB1470211A (tr) |
HK (2) | HK47280A (tr) |
NL (1) | NL7406111A (tr) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL180466C (nl) * | 1974-03-15 | 1987-02-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een halfgeleiderlichaam voorzien van een in het halfgeleiderlichaam verzonken patroon van isolerend materiaal. |
US3962717A (en) * | 1974-10-29 | 1976-06-08 | Fairchild Camera And Instrument Corporation | Oxide isolated integrated injection logic with selective guard ring |
US3993513A (en) * | 1974-10-29 | 1976-11-23 | Fairchild Camera And Instrument Corporation | Combined method for fabricating oxide-isolated vertical bipolar transistors and complementary oxide-isolated lateral bipolar transistors and the resulting structures |
US3982266A (en) * | 1974-12-09 | 1976-09-21 | Texas Instruments Incorporated | Integrated injection logic having high inverse current gain |
US4058419A (en) * | 1974-12-27 | 1977-11-15 | Tokyo Shibaura Electric, Co., Ltd. | Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques |
NL7507733A (nl) * | 1975-06-30 | 1977-01-03 | Philips Nv | Halfgeleiderinrichting. |
JPS5216187A (en) * | 1975-07-30 | 1977-02-07 | Hitachi Ltd | Semiconductor integrated circuit device and its producing method |
JPS5367383A (en) * | 1976-08-08 | 1978-06-15 | Fairchild Camera Instr Co | Method of producing small ic implantation logic semiconductor |
US4180827A (en) * | 1977-08-31 | 1979-12-25 | International Business Machines Corporation | NPN/PNP Fabrication process with improved alignment |
US4283236A (en) * | 1979-09-19 | 1981-08-11 | Harris Corporation | Method of fabricating lateral PNP transistors utilizing selective diffusion and counter doping |
JPS56115565A (en) * | 1980-02-19 | 1981-09-10 | Fujitsu Ltd | Semiconductor device |
JPS56131954A (en) * | 1980-03-19 | 1981-10-15 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
US4804634A (en) * | 1981-04-24 | 1989-02-14 | National Semiconductor Corporation | Integrated circuit lateral transistor structure |
GB2143082B (en) * | 1983-07-06 | 1987-06-17 | Standard Telephones Cables Ltd | Bipolar lateral transistor |
US4510676A (en) * | 1983-12-06 | 1985-04-16 | International Business Machines, Corporation | Method of fabricating a lateral PNP transistor |
DE3618166A1 (de) * | 1986-05-30 | 1987-12-03 | Telefunken Electronic Gmbh | Lateraltransistor |
US6828650B2 (en) * | 2002-05-31 | 2004-12-07 | Motorola, Inc. | Bipolar junction transistor structure with improved current gain characteristics |
USD866249S1 (en) | 2016-03-22 | 2019-11-12 | Zume, Inc. | Food container cover |
USD992963S1 (en) | 2019-08-15 | 2023-07-25 | Zume, Inc. | Lid for a food container |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3713008A (en) * | 1962-11-26 | 1973-01-23 | Siemens Ag | Semiconductor devices having at least four regions of alternately different conductance type |
US3473979A (en) * | 1963-01-29 | 1969-10-21 | Motorola Inc | Semiconductor device |
US3328214A (en) * | 1963-04-22 | 1967-06-27 | Siliconix Inc | Process for manufacturing horizontal transistor structure |
US3411051A (en) * | 1964-12-29 | 1968-11-12 | Texas Instruments Inc | Transistor with an isolated region having a p-n junction extending from the isolation wall to a surface |
US3575646A (en) * | 1966-09-23 | 1971-04-20 | Westinghouse Electric Corp | Integrated circuit structures including controlled rectifiers |
US3703420A (en) * | 1970-03-03 | 1972-11-21 | Ibm | Lateral transistor structure and process for forming the same |
US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
-
1973
- 1973-05-07 US US357968A patent/US3873989A/en not_active Expired - Lifetime
-
1974
- 1974-04-01 GB GB1432674A patent/GB1470211A/en not_active Expired
- 1974-04-01 GB GB3641476A patent/GB1470212A/en not_active Expired
- 1974-04-26 DE DE2420239A patent/DE2420239A1/de not_active Withdrawn
- 1974-05-03 FR FR7415403A patent/FR2229140B1/fr not_active Expired
- 1974-05-06 CA CA199,055A patent/CA994923A/en not_active Expired
- 1974-05-07 JP JP5107874A patent/JPS5516457B2/ja not_active Expired
- 1974-05-07 NL NL7406111A patent/NL7406111A/xx not_active Application Discontinuation
-
1980
- 1980-08-28 HK HK472/80A patent/HK47280A/xx unknown
- 1980-08-28 HK HK471/80A patent/HK47180A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
NL7406111A (tr) | 1974-11-11 |
FR2229140B1 (tr) | 1978-08-11 |
FR2229140A1 (tr) | 1974-12-06 |
US3873989A (en) | 1975-03-25 |
DE2420239A1 (de) | 1974-11-28 |
HK47280A (en) | 1980-09-05 |
JPS5516457B2 (tr) | 1980-05-02 |
JPS5017584A (tr) | 1975-02-24 |
CA994923A (en) | 1976-08-10 |
AU6805874A (en) | 1975-10-23 |
GB1470211A (en) | 1977-04-14 |
GB1470212A (en) | 1977-04-14 |
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