HK18293A - Redundancy circuit for use in a semiconductor memory device - Google Patents

Redundancy circuit for use in a semiconductor memory device

Info

Publication number
HK18293A
HK18293A HK182/93A HK18293A HK18293A HK 18293 A HK18293 A HK 18293A HK 182/93 A HK182/93 A HK 182/93A HK 18293 A HK18293 A HK 18293A HK 18293 A HK18293 A HK 18293A
Authority
HK
Hong Kong
Prior art keywords
memory device
semiconductor memory
redundancy circuit
redundancy
circuit
Prior art date
Application number
HK182/93A
Other languages
English (en)
Inventor
Hyung-Kyu-Lim
Jae-Yeong Do
Rustam Mehta
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of HK18293A publication Critical patent/HK18293A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/78Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
HK182/93A 1986-05-07 1993-03-04 Redundancy circuit for use in a semiconductor memory device HK18293A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019860003537A KR890001847B1 (ko) 1986-05-07 1986-05-07 반도체 메모리 장치의 리던던시 회로

Publications (1)

Publication Number Publication Date
HK18293A true HK18293A (en) 1993-03-12

Family

ID=19249818

Family Applications (1)

Application Number Title Priority Date Filing Date
HK182/93A HK18293A (en) 1986-05-07 1993-03-04 Redundancy circuit for use in a semiconductor memory device

Country Status (8)

Country Link
US (1) US4794568A (fr)
JP (1) JPS62279600A (fr)
KR (1) KR890001847B1 (fr)
DE (1) DE3714980A1 (fr)
FR (1) FR2598549B1 (fr)
GB (1) GB2191614B (fr)
HK (1) HK18293A (fr)
SG (1) SG55491G (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7190617B1 (en) 1989-04-13 2007-03-13 Sandisk Corporation Flash EEprom system
US7447069B1 (en) 1989-04-13 2008-11-04 Sandisk Corporation Flash EEprom system
US5535328A (en) * 1989-04-13 1996-07-09 Sandisk Corporation Non-volatile memory system card with flash erasable sectors of EEprom cells including a mechanism for substituting defective cells
DE69033262T2 (de) * 1989-04-13 2000-02-24 Sandisk Corp EEPROM-Karte mit Austauch von fehlerhaften Speicherzellen und Zwischenspeicher
EP0457308B1 (fr) * 1990-05-18 1997-01-22 Fujitsu Limited Système de traitement de données ayant un mécanisme de sectionnement de voie d'entrée/de sortie et procédé de commande de système de traitement de données
US5276834A (en) * 1990-12-04 1994-01-04 Micron Technology, Inc. Spare memory arrangement
KR940006922B1 (ko) * 1991-07-11 1994-07-29 금성일렉트론 주식회사 반도체 메모리의 리던던시 회로
US6757800B1 (en) 1995-07-31 2004-06-29 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6081878A (en) 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6801979B1 (en) 1995-07-31 2004-10-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US5828599A (en) * 1996-08-06 1998-10-27 Simtek Corporation Memory with electrically erasable and programmable redundancy
US6411546B1 (en) 1997-03-31 2002-06-25 Lexar Media, Inc. Nonvolatile memory using flexible erasing methods and method and system for using same
KR100228533B1 (ko) * 1997-06-23 1999-11-01 윤종용 반도체 집적회로의 용단가능한 퓨즈 및 그 제조방법
AU1729100A (en) 1998-11-17 2000-06-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US6407944B1 (en) 1998-12-29 2002-06-18 Samsung Electronics Co., Ltd. Method for protecting an over-erasure of redundant memory cells during test for high-density nonvolatile memory semiconductor devices
US8072834B2 (en) * 2005-08-25 2011-12-06 Cypress Semiconductor Corporation Line driver circuit and method with standby mode of operation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346459A (en) * 1980-06-30 1982-08-24 Inmos Corporation Redundancy scheme for an MOS memory
JPS57130298A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor integrated circuit memory and relieving method for its fault
JPS5841500A (ja) * 1981-08-24 1983-03-10 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン 欠陥分離用デコ−ダ
US4422161A (en) * 1981-10-08 1983-12-20 Rca Corporation Memory array with redundant elements
US4538247A (en) * 1983-01-14 1985-08-27 Fairchild Research Center Redundant rows in integrated circuit memories

Also Published As

Publication number Publication date
US4794568A (en) 1988-12-27
FR2598549A1 (fr) 1987-11-13
GB8710866D0 (en) 1987-06-10
FR2598549B1 (fr) 1991-01-04
JPS62279600A (ja) 1987-12-04
GB2191614B (en) 1990-06-06
KR890001847B1 (ko) 1989-05-25
JPH0366760B2 (fr) 1991-10-18
DE3714980A1 (de) 1987-11-12
SG55491G (en) 1991-08-23
DE3714980C2 (fr) 1990-05-03
KR870011693A (ko) 1987-12-26
GB2191614A (en) 1987-12-16

Similar Documents

Publication Publication Date Title
GB2215913B (en) Semiconductor memory device
GB2227109B (en) Semiconductor memory device
EP0242981A3 (en) Semiconductor memory device having redundancy circuit portion
EP0253631A3 (en) Semiconductor memory device
EP0172016A3 (en) Semiconductor memory device having a redundancy circuit
EP0116464A3 (en) A semiconductor memory device
EP0352193A3 (en) Semiconductor memory device
EP0459521A3 (en) Semiconductor memory device with a redundancy circuit
GB2191614B (en) Redundancy circuit for use in a semiconductor memory device
SG77188G (en) A semiconductor integrated circuit device
EP0234891A3 (en) Semiconductor memory device
HK40490A (en) A semiconductor integrated circuit device
EP0234907A3 (en) Semiconductor memory device with redundant memory cell
EP0136170A3 (en) A semiconductor memory device
EP0239187A3 (en) Semiconductor memory device
EP0269106A3 (en) Semiconductor memory device
EP0251559A3 (en) Semiconductor memory device
EP0249413A3 (en) Semiconductor memory device
EP0240155A3 (en) Semiconductor memory device
EP0414477A3 (en) Semiconductor memory device having redundant memory cells
KR920008246B1 (en) A semiconductor memory circuit
EP0139385A3 (en) A semiconductor memory device
GB2200005B (en) Input-output circuitry for a semiconductor memory device
EP0202910A3 (en) Decoder circuit for a semiconductor memory device
EP0352111A3 (en) Semiconductor memory device

Legal Events

Date Code Title Description
PF Patent in force
PE Patent expired

Effective date: 20070506