HK1223746A1 - 放大級工作點的確定 - Google Patents

放大級工作點的確定

Info

Publication number
HK1223746A1
HK1223746A1 HK16111771.4A HK16111771A HK1223746A1 HK 1223746 A1 HK1223746 A1 HK 1223746A1 HK 16111771 A HK16111771 A HK 16111771A HK 1223746 A1 HK1223746 A1 HK 1223746A1
Authority
HK
Hong Kong
Prior art keywords
working point
point determination
amplifying stage
stage working
amplifying
Prior art date
Application number
HK16111771.4A
Other languages
English (en)
Inventor
Daniel Kerek
Peter Lidberg
Original Assignee
Deltanode Solutions Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deltanode Solutions Ab filed Critical Deltanode Solutions Ab
Publication of HK1223746A1 publication Critical patent/HK1223746A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3282—Acting on the phase and the amplitude of the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3247—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using feedback acting on predistortion circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2201/00—Indexing scheme relating to details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements covered by H03F1/00
    • H03F2201/32—Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion
    • H03F2201/3233—Adaptive predistortion using lookup table, e.g. memory, RAM, ROM, LUT, to generate the predistortion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21131—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers the input bias voltage of a power amplifier being controlled, e.g. by a potentiometer or an emitter follower

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
HK16111771.4A 2013-08-28 2016-10-12 放大級工作點的確定 HK1223746A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE1350989 2013-08-28
PCT/SE2014/050985 WO2015030663A1 (en) 2013-08-28 2014-08-27 Amplifying stage working point determination

Publications (1)

Publication Number Publication Date
HK1223746A1 true HK1223746A1 (zh) 2017-08-04

Family

ID=51589489

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16111771.4A HK1223746A1 (zh) 2013-08-28 2016-10-12 放大級工作點的確定

Country Status (8)

Country Link
US (1) US9948245B2 (zh)
EP (1) EP3039783A1 (zh)
KR (1) KR20160048120A (zh)
CA (1) CA2921898C (zh)
HK (1) HK1223746A1 (zh)
MX (1) MX2016002460A (zh)
TW (1) TW201608821A (zh)
WO (1) WO2015030663A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11036262B1 (en) * 2008-01-14 2021-06-15 Micro Mobio Corporation Radio frequency power amplifier with adjacent channel leakage correction circuit
US9860052B2 (en) * 2015-07-30 2018-01-02 National Instruments Corporation Digital predistortion for full-duplex radio
DE102017210759B4 (de) * 2017-06-27 2019-04-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Adaptive Verstärkerschaltung zur Optimierung des Wirkungsgrades eines Kommunikations-Front-End
US11133834B2 (en) 2019-03-07 2021-09-28 Samsung Electronics Co., Ltd. Device and method of compensating for nonlinearity of power amplifier
US11515617B1 (en) 2019-04-03 2022-11-29 Micro Mobio Corporation Radio frequency active antenna system in a package
JP2021184526A (ja) * 2020-05-21 2021-12-02 住友電気工業株式会社 ドハティ増幅器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6600369B2 (en) * 2001-12-07 2003-07-29 Motorola, Inc. Wideband linear amplifier with predistortion error correction
JP4091047B2 (ja) * 2002-10-31 2008-05-28 深▲川▼市中▲興▼通▲訊▼股▲分▼有限公司 広帯域プリディストーション線形化の方法およびシステム
JP4417174B2 (ja) * 2004-05-19 2010-02-17 株式会社日立国際電気 プリディストータ
WO2007046370A1 (ja) * 2005-10-17 2007-04-26 Hitachi Kokusai Electric Inc. 非線形歪検出方法及び歪補償増幅装置
US7755429B2 (en) 2007-02-16 2010-07-13 Microelectronics Technology Inc. System and method for dynamic drain voltage adjustment to control linearity, output power, and efficiency in RF power amplifiers
US7619468B1 (en) * 2008-09-30 2009-11-17 Nortel Networks Limited Doherty amplifier with drain bias supply modulation
US8706062B1 (en) * 2008-12-19 2014-04-22 Scintera Networks, Inc. Self-adaptive power amplification
JP5206526B2 (ja) 2009-03-19 2013-06-12 富士通株式会社 増幅装置および送信装置
US8542768B2 (en) * 2009-12-21 2013-09-24 Dali Systems Co. Ltd. High efficiency, remotely reconfigurable remote radio head unit system and method for wireless communications
JP2012034134A (ja) 2010-07-29 2012-02-16 Sumitomo Electric Device Innovations Inc 増幅器
US8908751B2 (en) * 2011-02-28 2014-12-09 Intel Mobile Communications GmbH Joint adaptive bias point adjustment and digital pre-distortion for power amplifier
US8824978B2 (en) * 2012-10-30 2014-09-02 Eta Devices, Inc. RF amplifier architecture and related techniques
US9438186B2 (en) * 2014-04-30 2016-09-06 Freescale Semiconductor, Inc. Power amplifier with envelope injection

Also Published As

Publication number Publication date
WO2015030663A1 (en) 2015-03-05
US20160211810A1 (en) 2016-07-21
MX2016002460A (es) 2016-08-17
US9948245B2 (en) 2018-04-17
CA2921898A1 (en) 2015-03-05
CA2921898C (en) 2019-12-31
TW201608821A (zh) 2016-03-01
EP3039783A1 (en) 2016-07-06
KR20160048120A (ko) 2016-05-03

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