HK1198858A2 - Method of marking a solid state material, and solid state materials marked according to such a method - Google Patents

Method of marking a solid state material, and solid state materials marked according to such a method

Info

Publication number
HK1198858A2
HK1198858A2 HK14103658.1A HK14103658A HK1198858A2 HK 1198858 A2 HK1198858 A2 HK 1198858A2 HK 14103658 A HK14103658 A HK 14103658A HK 1198858 A2 HK1198858 A2 HK 1198858A2
Authority
HK
Hong Kong
Prior art keywords
solid state
marking
marked according
materials marked
state material
Prior art date
Application number
HK14103658.1A
Other languages
English (en)
Chinese (zh)
Inventor
Yingnan Wang
Ching Tom Kong
Original Assignee
Master Dynamic Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Master Dynamic Ltd filed Critical Master Dynamic Ltd
Priority to HK14103658.1A priority Critical patent/HK1198858A2/xx
Priority to CN201580025416.1A priority patent/CN106457610B/zh
Priority to EP15779777.0A priority patent/EP3131724B1/en
Priority to US15/304,843 priority patent/US10457089B2/en
Priority to PCT/CN2015/076803 priority patent/WO2015158290A1/en
Publication of HK1198858A2 publication Critical patent/HK1198858A2/xx

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B44—DECORATIVE ARTS
    • B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
    • B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
    • B44C1/22—Removing surface-material, e.g. by engraving, by etching
    • B44C1/227—Removing surface-material, e.g. by engraving, by etching by etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Laser Beam Processing (AREA)
  • Eyeglasses (AREA)
HK14103658.1A 2014-04-16 2014-04-16 Method of marking a solid state material, and solid state materials marked according to such a method HK1198858A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
HK14103658.1A HK1198858A2 (en) 2014-04-16 2014-04-16 Method of marking a solid state material, and solid state materials marked according to such a method
CN201580025416.1A CN106457610B (zh) 2014-04-16 2015-04-16 标记固态材料的方法和根据该方法标记的固态材料
EP15779777.0A EP3131724B1 (en) 2014-04-16 2015-04-16 Method of marking a solid state material
US15/304,843 US10457089B2 (en) 2014-04-16 2015-04-16 Method of marking a solid state material, and solid state materials marked according to such a method
PCT/CN2015/076803 WO2015158290A1 (en) 2014-04-16 2015-04-16 Method of marking a solid state material, and solid state materials marked according to such a method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
HK14103658.1A HK1198858A2 (en) 2014-04-16 2014-04-16 Method of marking a solid state material, and solid state materials marked according to such a method

Publications (1)

Publication Number Publication Date
HK1198858A2 true HK1198858A2 (en) 2015-06-12

Family

ID=53276343

Family Applications (1)

Application Number Title Priority Date Filing Date
HK14103658.1A HK1198858A2 (en) 2014-04-16 2014-04-16 Method of marking a solid state material, and solid state materials marked according to such a method

Country Status (5)

Country Link
US (1) US10457089B2 (xx)
EP (1) EP3131724B1 (xx)
CN (1) CN106457610B (xx)
HK (1) HK1198858A2 (xx)
WO (1) WO2015158290A1 (xx)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014078589A1 (en) 2012-11-15 2014-05-22 Micro-Tracers, Inc. Tracer particles, and methods for making same
HK1213429A2 (zh) * 2015-12-31 2016-06-30 Master Dynamic Ltd 在製品上形成標記的方法和其上有標記的製品
US20210146716A1 (en) * 2018-02-23 2021-05-20 Master Dynamic Limited Method of marking a solid-state material, markings formed from such methods and solid-state materials marked according to such a method
DE102018206406B3 (de) * 2018-04-25 2019-09-12 Carl Zeiss Meditec Ag Mikroskopiesystem und Verfahren zum Betrieb eines Mikroskopiesystems
CN114258341A (zh) * 2019-07-02 2022-03-29 动力专家有限公司 标记固态材料的方法、由该方法形成的标记以及根据该方法标记的固态材料
EP3994614A4 (en) * 2019-07-02 2023-04-05 Master Dynamic Limited METHOD FOR MARKING A DIAMOND, MARKS FORMED BY SUCH PROCESSES AND DIAMONDS MARKED ACCORDING TO SUCH PROCESS
JP6755564B1 (ja) * 2019-10-07 2020-09-16 株式会社ユーロックテクノパーツ 標示部材
TWI814173B (zh) * 2020-12-14 2023-09-01 香港商金展科技有限公司 在多個寶石的外表面形成可識別標記的方法和系統，以及根據這種方法標記的寶石
CN116626987B (zh) * 2023-07-17 2023-10-10 上海鲲游科技有限公司 一种基于Lag效应的工艺调制方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2325439A (en) * 1997-05-23 1998-11-25 Gersan Ets Marking diamond gemstone by plasma or ion beam etching through a laser ablated resist
GB9727364D0 (en) 1997-12-24 1998-02-25 Gersan Ets Watermark
GB0103881D0 (en) * 2001-02-16 2001-04-04 Gersan Ets E-beam marking
EP1959780A1 (en) * 2005-12-06 2008-08-27 California Institute of Technology Enhancing the optical characteristics of a gemstone
US8313793B2 (en) * 2006-08-04 2012-11-20 Valinmark Inc. Method for producing and visualizing an optically hidden mark
EP2144117A1 (en) 2008-07-11 2010-01-13 The Provost, Fellows and Scholars of the College of the Holy and Undivided Trinity of Queen Elizabeth near Dublin Process and system for fabrication of patterns on a surface
WO2012021932A1 (en) 2010-08-19 2012-02-23 Newsouth Innovations Pty Limited A method of forming a structure in a material
US20120112218A1 (en) * 2010-11-04 2012-05-10 Agency For Science, Technology And Research Light Emitting Diode with Polarized Light Emission
KR101908655B1 (ko) * 2012-02-16 2018-10-16 엘지이노텍 주식회사 반도체 소자의 벽개면 형성 방법
CN102866580A (zh) * 2012-09-26 2013-01-09 清华大学 一种纳米光刻方法及装置
WO2015051640A1 (en) 2013-10-11 2015-04-16 Goldway Technology Limited Method of providing markings to precious stones including gemstones and diamonds, and markings and marked precious stones marked according to such a method
HK1204517A2 (en) * 2014-10-07 2015-11-20 Goldway Technology Ltd A system, apparatus and method for viewing a gemstone

Also Published As

Publication number Publication date
EP3131724A1 (en) 2017-02-22
CN106457610B (zh) 2019-04-30
US10457089B2 (en) 2019-10-29
US20170182838A1 (en) 2017-06-29
WO2015158290A1 (en) 2015-10-22
CN106457610A (zh) 2017-02-22
EP3131724B1 (en) 2019-08-14
EP3131724A4 (en) 2017-11-29

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Legal Events

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PEU Short-term patents expired

Effective date: 20220415