HK1186001A1 - 背側照明成像傳感器中的側向光屏蔽物 - Google Patents

背側照明成像傳感器中的側向光屏蔽物

Info

Publication number
HK1186001A1
HK1186001A1 HK13113236.2A HK13113236A HK1186001A1 HK 1186001 A1 HK1186001 A1 HK 1186001A1 HK 13113236 A HK13113236 A HK 13113236A HK 1186001 A1 HK1186001 A1 HK 1186001A1
Authority
HK
Hong Kong
Prior art keywords
light shield
imaging sensors
lateral light
backside illuminated
illuminated imaging
Prior art date
Application number
HK13113236.2A
Other languages
English (en)
Inventor
毛杜立
戴幸志
文森特．瓦乃茲艾
錢胤
陳剛
霍華德．
．羅茲
Original Assignee
豪威科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 豪威科技股份有限公司 filed Critical 豪威科技股份有限公司
Publication of HK1186001A1 publication Critical patent/HK1186001A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
HK13113236.2A 2012-02-09 2013-11-27 背側照明成像傳感器中的側向光屏蔽物 HK1186001A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/370,085 US8772898B2 (en) 2012-02-09 2012-02-09 Lateral light shield in backside illuminated imaging sensors

Publications (1)

Publication Number Publication Date
HK1186001A1 true HK1186001A1 (zh) 2014-02-28

Family

ID=48927031

Family Applications (1)

Application Number Title Priority Date Filing Date
HK13113236.2A HK1186001A1 (zh) 2012-02-09 2013-11-27 背側照明成像傳感器中的側向光屏蔽物

Country Status (4)

Country Link
US (2) US8772898B2 (zh)
CN (1) CN103247647B (zh)
HK (1) HK1186001A1 (zh)
TW (1) TWI533443B (zh)

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Publication number Priority date Publication date Assignee Title
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
CN106449684B (zh) 2010-06-18 2019-09-27 西奥尼克斯公司 高速光敏设备及相关方法
JP5450295B2 (ja) * 2010-07-05 2014-03-26 オリンパス株式会社 撮像装置および撮像装置の製造方法
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
WO2013010127A2 (en) 2011-07-13 2013-01-17 Sionyx, Inc. Biometric imaging devices and associated methods
US8772898B2 (en) 2012-02-09 2014-07-08 Omnivision Technologies, Inc. Lateral light shield in backside illuminated imaging sensors
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
US8709854B2 (en) * 2012-05-10 2014-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Backside structure and methods for BSI image sensors
US9401380B2 (en) 2012-05-10 2016-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Backside structure and methods for BSI image sensors
US9356058B2 (en) 2012-05-10 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Backside structure for BSI image sensor
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
JP2015060855A (ja) * 2013-09-17 2015-03-30 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
US9123604B2 (en) 2013-10-17 2015-09-01 Omnivision Technologies, Inc. Image sensor with doped semiconductor region for reducing image noise
JP6500442B2 (ja) * 2014-02-28 2019-04-17 住友電気工業株式会社 アレイ型受光素子
KR102154184B1 (ko) 2014-03-10 2020-09-09 삼성전자 주식회사 이미지 센서 및 이를 제조하는 방법
WO2016013977A1 (en) 2014-07-25 2016-01-28 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules including an image sensor having regions optically separated from one another
CN105244360B (zh) * 2015-10-29 2019-02-26 苏州晶方半导体科技股份有限公司 感光芯片封装结构及其封装方法
TWI607576B (zh) * 2016-01-12 2017-12-01 友達光電股份有限公司 光感測裝置
KR102522110B1 (ko) * 2017-11-29 2023-04-13 엘지디스플레이 주식회사 유기발광 표시장치
KR102534249B1 (ko) 2018-01-12 2023-05-18 삼성전자주식회사 이미지 센서
WO2020150908A1 (en) 2019-01-22 2020-07-30 SZ DJI Technology Co., Ltd. Image sensor and fabrication method thereof
US11698326B2 (en) * 2019-08-16 2023-07-11 Corning Incorporated Nondestructive imaging and surface quality inspection of structured plates

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4013293B2 (ja) 1997-09-01 2007-11-28 セイコーエプソン株式会社 表示装置兼用型イメージセンサ装置及びアクティブマトリクス型表示装置
US7492027B2 (en) * 2004-02-20 2009-02-17 Micron Technology, Inc. Reduced crosstalk sensor and method of formation
US7122840B2 (en) * 2004-06-17 2006-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with optical guard ring and fabrication method thereof
US7935994B2 (en) 2005-02-24 2011-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Light shield for CMOS imager
US7952096B2 (en) 2008-12-08 2011-05-31 Omnivision Technologies, Inc. CMOS image sensor with improved backside surface treatment
US8779361B2 (en) * 2009-06-30 2014-07-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Optical proximity sensor package with molded infrared light rejection barrier and infrared pass components
US8274101B2 (en) * 2009-10-20 2012-09-25 Omnivision Technologies, Inc. CMOS image sensor with heat management structures
US8278690B2 (en) 2010-04-27 2012-10-02 Omnivision Technologies, Inc. Laser anneal for image sensors
US20130200396A1 (en) 2012-02-06 2013-08-08 Omnivision Technologies, Inc. Prevention of light leakage in backside illuminated imaging sensors
US8772898B2 (en) 2012-02-09 2014-07-08 Omnivision Technologies, Inc. Lateral light shield in backside illuminated imaging sensors

Also Published As

Publication number Publication date
US20140312447A1 (en) 2014-10-23
TW201338145A (zh) 2013-09-16
CN103247647B (zh) 2016-06-15
US20130207212A1 (en) 2013-08-15
CN103247647A (zh) 2013-08-14
US9177982B2 (en) 2015-11-03
TWI533443B (zh) 2016-05-11
US8772898B2 (en) 2014-07-08

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