HK1174438A1 - 具有前側和背側光電檢測器的圖像傳感器 - Google Patents
具有前側和背側光電檢測器的圖像傳感器Info
- Publication number
- HK1174438A1 HK1174438A1 HK13101674.6A HK13101674A HK1174438A1 HK 1174438 A1 HK1174438 A1 HK 1174438A1 HK 13101674 A HK13101674 A HK 13101674A HK 1174438 A1 HK1174438 A1 HK 1174438A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- frontside
- image sensors
- backside photodetectors
- photodetectors
- backside
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
- H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/492,460 US8018016B2 (en) | 2009-06-26 | 2009-06-26 | Back-illuminated image sensors having both frontside and backside photodetectors |
PCT/US2010/001679 WO2010151288A1 (en) | 2009-06-26 | 2010-06-11 | Image sensors having frontside and backside photodetectors |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1174438A1 true HK1174438A1 (zh) | 2013-06-07 |
Family
ID=42735606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK13101674.6A HK1174438A1 (zh) | 2009-06-26 | 2013-02-06 | 具有前側和背側光電檢測器的圖像傳感器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8018016B2 (zh) |
EP (1) | EP2446472B1 (zh) |
CN (1) | CN102804378B (zh) |
HK (1) | HK1174438A1 (zh) |
TW (1) | TWI501389B (zh) |
WO (1) | WO2010151288A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8464952B2 (en) * | 2009-11-18 | 2013-06-18 | Hand Held Products, Inc. | Optical reader having improved back-illuminated image sensor |
US8048711B2 (en) * | 2009-12-30 | 2011-11-01 | Omnivision Technologies, Inc. | Method for forming deep isolation in imagers |
US8378398B2 (en) * | 2010-09-30 | 2013-02-19 | Omnivision Technologies, Inc. | Photodetector isolation in image sensors |
US8736728B2 (en) * | 2011-07-29 | 2014-05-27 | Truesense Imaging, Inc. | Image sensor with controllable vertically integrated photodetectors |
US8339494B1 (en) * | 2011-07-29 | 2012-12-25 | Truesense Imaging, Inc. | Image sensor with controllable vertically integrated photodetectors |
US8829637B2 (en) | 2011-07-29 | 2014-09-09 | Semiconductor Components Industries, Llc | Image sensor with controllable vertically integrated photodetectors using a buried layer |
US8946612B2 (en) | 2011-07-29 | 2015-02-03 | Semiconductor Components Industries, Llc | Image sensor with controllable vertically integrated photodetectors |
US8730362B2 (en) | 2011-07-29 | 2014-05-20 | Truesense Imaging, Inc. | Image sensor with controllable vertically integrated photodetectors |
US9070611B2 (en) | 2011-07-29 | 2015-06-30 | Semiconductor Components Industries, Llc | Image sensor with controllable vertically integrated photodetectors |
US9099389B2 (en) | 2012-02-10 | 2015-08-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for reducing stripe patterns |
US10009552B2 (en) | 2012-09-20 | 2018-06-26 | Semiconductor Components Industries, Llc | Imaging systems with front side illuminated near infrared imaging pixels |
JP2015032640A (ja) * | 2013-07-31 | 2015-02-16 | 株式会社東芝 | 固体撮像装置および固体撮像装置の製造方法 |
CN104362164A (zh) * | 2014-11-21 | 2015-02-18 | 北京思比科微电子技术股份有限公司 | 提高饱和容量的背照式图像传感器结构 |
US11430909B2 (en) * | 2019-07-31 | 2022-08-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | BSI chip with backside alignment mark |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6727521B2 (en) * | 2000-09-25 | 2004-04-27 | Foveon, Inc. | Vertical color filter detector group and array |
US7265397B1 (en) * | 2000-08-30 | 2007-09-04 | Sarnoff Corporation | CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture |
US6933489B2 (en) * | 2002-05-10 | 2005-08-23 | Hamamatsu Photonics K.K. | Back illuminated photodiode array and method of manufacturing the same |
JP4123415B2 (ja) * | 2002-05-20 | 2008-07-23 | ソニー株式会社 | 固体撮像装置 |
JP2004138768A (ja) * | 2002-10-17 | 2004-05-13 | Sharp Corp | 画像入出力装置及びその画像情報読取方法 |
US6921934B2 (en) * | 2003-03-28 | 2005-07-26 | Micron Technology, Inc. | Double pinned photodiode for CMOS APS and method of formation |
US7160753B2 (en) * | 2004-03-16 | 2007-01-09 | Voxtel, Inc. | Silicon-on-insulator active pixel sensors |
EP1583150A1 (en) * | 2004-03-31 | 2005-10-05 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Image sensor with large-area, high-sensitivity and high-speed pixels |
US8461648B2 (en) * | 2005-07-27 | 2013-06-11 | Infineon Technologies Austria Ag | Semiconductor component with a drift region and a drift control region |
CN101079967B (zh) * | 2006-02-24 | 2013-07-10 | 索尼株式会社 | 固态成像装置及其制造方法、以及摄像机 |
KR100745991B1 (ko) * | 2006-08-11 | 2007-08-06 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
US8049256B2 (en) * | 2006-10-05 | 2011-11-01 | Omnivision Technologies, Inc. | Active pixel sensor having a sensor wafer connected to a support circuit wafer |
TWI479887B (zh) | 2007-05-24 | 2015-04-01 | Sony Corp | 背向照明固態成像裝置及照相機 |
JP5023808B2 (ja) * | 2007-05-24 | 2012-09-12 | ソニー株式会社 | 固体撮像装置およびカメラ |
JP5104036B2 (ja) * | 2007-05-24 | 2012-12-19 | ソニー株式会社 | 固体撮像素子とその製造方法及び撮像装置 |
US7608906B2 (en) * | 2007-11-13 | 2009-10-27 | Teledyne Licensing, Llc | Simultaneous unipolar multispectral integrated technology (SUMIT) detectors |
JP5061915B2 (ja) * | 2008-01-18 | 2012-10-31 | ソニー株式会社 | 固体撮像素子及び撮像装置 |
US8618458B2 (en) * | 2008-11-07 | 2013-12-31 | Omnivision Technologies, Inc. | Back-illuminated CMOS image sensors |
US20100144084A1 (en) * | 2008-12-05 | 2010-06-10 | Doan Hung Q | Optical waveguide structures for an image sensor |
US7838956B2 (en) * | 2008-12-17 | 2010-11-23 | Eastman Kodak Company | Back illuminated sensor with low crosstalk |
-
2009
- 2009-06-26 US US12/492,460 patent/US8018016B2/en active Active
-
2010
- 2010-06-11 WO PCT/US2010/001679 patent/WO2010151288A1/en active Application Filing
- 2010-06-11 CN CN201080028479.XA patent/CN102804378B/zh active Active
- 2010-06-11 EP EP10725907.9A patent/EP2446472B1/en active Active
- 2010-06-25 TW TW099120932A patent/TWI501389B/zh active
-
2013
- 2013-02-06 HK HK13101674.6A patent/HK1174438A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
CN102804378B (zh) | 2015-09-23 |
TW201112411A (en) | 2011-04-01 |
WO2010151288A1 (en) | 2010-12-29 |
US8018016B2 (en) | 2011-09-13 |
CN102804378A (zh) | 2012-11-28 |
EP2446472A1 (en) | 2012-05-02 |
US20100327392A1 (en) | 2010-12-30 |
EP2446472B1 (en) | 2016-12-28 |
TWI501389B (zh) | 2015-09-21 |
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