HK1156147A1 - High voltage sensor device and method therefor - Google Patents
High voltage sensor device and method thereforInfo
- Publication number
- HK1156147A1 HK1156147A1 HK11109977.5A HK11109977A HK1156147A1 HK 1156147 A1 HK1156147 A1 HK 1156147A1 HK 11109977 A HK11109977 A HK 11109977A HK 1156147 A1 HK1156147 A1 HK 1156147A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- high voltage
- sensor device
- voltage sensor
- method therefor
- therefor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/570,300 US7955943B2 (en) | 2005-01-25 | 2009-09-30 | High voltage sensor device and method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK1156147A1 true HK1156147A1 (en) | 2012-06-01 |
Family
ID=43887442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK11109977.5A HK1156147A1 (en) | 2009-09-30 | 2011-09-22 | High voltage sensor device and method therefor |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR101614272B1 (xx) |
| CN (1) | CN102034753B (xx) |
| HK (1) | HK1156147A1 (xx) |
| TW (1) | TWI503956B (xx) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8664741B2 (en) * | 2011-06-14 | 2014-03-04 | Taiwan Semiconductor Manufacturing Company Ltd. | High voltage resistor with pin diode isolation |
| US11152454B2 (en) * | 2019-02-19 | 2021-10-19 | Semiconductor Components Industries, Llc | Method of forming a semiconductor device having a resistor and structure therefor |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5382826A (en) * | 1993-12-21 | 1995-01-17 | Xerox Corporation | Stacked high voltage transistor unit |
| US6222247B1 (en) * | 1999-12-02 | 2001-04-24 | United Microelectronics Corp. | Semiconductor resistor that can be withstand high voltages |
| US6680515B1 (en) * | 2000-11-10 | 2004-01-20 | Monolithic Power Systems, Inc. | Lateral high voltage transistor having spiral field plate and graded concentration doping |
| JP2005005443A (ja) * | 2003-06-11 | 2005-01-06 | Toshiba Corp | 高耐圧半導体装置 |
| US6943069B2 (en) | 2003-10-14 | 2005-09-13 | Semiconductor Components Industries, L.L.C. | Power system inhibit method and device and structure therefor |
| US7306999B2 (en) * | 2005-01-25 | 2007-12-11 | Semiconductor Components Industries, L.L.C. | High voltage sensor device and method therefor |
| JP2007324422A (ja) | 2006-06-01 | 2007-12-13 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
-
2009
- 2009-12-25 TW TW098145185A patent/TWI503956B/zh active
-
2010
- 2010-01-07 CN CN201010002044.XA patent/CN102034753B/zh not_active Expired - Fee Related
- 2010-03-25 KR KR1020100026593A patent/KR101614272B1/ko active IP Right Grant
-
2011
- 2011-09-22 HK HK11109977.5A patent/HK1156147A1/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI503956B (zh) | 2015-10-11 |
| CN102034753B (zh) | 2014-10-15 |
| CN102034753A (zh) | 2011-04-27 |
| KR101614272B1 (ko) | 2016-04-21 |
| KR20110035826A (ko) | 2011-04-06 |
| TW201112396A (en) | 2011-04-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20220104 |