HK1147609A1 - 使用交叉耦合級聯晶體管的電平移位 - Google Patents

使用交叉耦合級聯晶體管的電平移位

Info

Publication number
HK1147609A1
HK1147609A1 HK11101609.8A HK11101609A HK1147609A1 HK 1147609 A1 HK1147609 A1 HK 1147609A1 HK 11101609 A HK11101609 A HK 11101609A HK 1147609 A1 HK1147609 A1 HK 1147609A1
Authority
HK
Hong Kong
Prior art keywords
cross
level shifting
cascode transistors
coupled cascode
coupled
Prior art date
Application number
HK11101609.8A
Other languages
English (en)
Inventor
‧艾德蒙森
‧沃爾什
Original Assignee
半導體元件工業有限責任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體元件工業有限責任公司 filed Critical 半導體元件工業有限責任公司
Publication of HK1147609A1 publication Critical patent/HK1147609A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
HK11101609.8A 2009-04-22 2011-02-18 使用交叉耦合級聯晶體管的電平移位 HK1147609A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/428,285 US7804350B1 (en) 2009-04-22 2009-04-22 Level shifting using cross-coupled cascode transistors

Publications (1)

Publication Number Publication Date
HK1147609A1 true HK1147609A1 (zh) 2011-08-12

Family

ID=42753139

Family Applications (1)

Application Number Title Priority Date Filing Date
HK11101609.8A HK1147609A1 (zh) 2009-04-22 2011-02-18 使用交叉耦合級聯晶體管的電平移位

Country Status (3)

Country Link
US (1) US7804350B1 (zh)
CN (1) CN101873129B (zh)
HK (1) HK1147609A1 (zh)

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US8120984B2 (en) * 2010-03-23 2012-02-21 Ememory Technology Inc. High-voltage selecting circuit which can generate an output voltage without a voltage drop
CN102164030B (zh) 2011-02-15 2014-01-29 矽力杰半导体技术(杭州)有限公司 一种单端口通讯电路及其通讯方法
CN103986423B (zh) * 2013-02-07 2017-05-24 瑞昱半导体股份有限公司 三级晶体管串迭的功率放大器
US9503091B2 (en) * 2013-11-20 2016-11-22 Globalfoundries Inc. Wordline decoder circuits for embedded charge trap multi-time-programmable-read-only-memory
US9191001B2 (en) 2013-12-20 2015-11-17 Cirrus Logic, Inc. Transistor devices operating with switching voltages higher than a nominal voltage of the transistor
CN105577166B (zh) * 2015-12-15 2018-12-14 珠海市杰理科技股份有限公司 电平移位电路和电源装置
US10164637B2 (en) * 2017-02-24 2018-12-25 Qualcomm Incorporated Level shifter for voltage conversion
US10284201B1 (en) * 2018-01-23 2019-05-07 Stmicroelectronics International N.V. High range positive voltage level shifter using low voltage devices
US10498315B2 (en) * 2018-03-05 2019-12-03 Texas Instruments Incorporated Level shifter circuit
KR20200040956A (ko) * 2018-10-10 2020-04-21 삼성전자주식회사 래치 회로
US11276468B2 (en) * 2020-07-31 2022-03-15 Micron Technology, Inc. High-speed efficient level shifter
US11277121B1 (en) * 2021-01-28 2022-03-15 Nxp B.V. Level shifter

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Also Published As

Publication number Publication date
CN101873129B (zh) 2014-07-23
CN101873129A (zh) 2010-10-27
US7804350B1 (en) 2010-09-28

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