HK1115937A1 - High current semiconductor power device soic package - Google Patents

High current semiconductor power device soic package

Info

Publication number
HK1115937A1
HK1115937A1 HK08111809A HK08111809A HK1115937A1 HK 1115937 A1 HK1115937 A1 HK 1115937A1 HK 08111809 A HK08111809 A HK 08111809A HK 08111809 A HK08111809 A HK 08111809A HK 1115937 A1 HK1115937 A1 HK 1115937A1
Authority
HK
Hong Kong
Prior art keywords
lead frame
power device
high current
semiconductor power
current semiconductor
Prior art date
Application number
HK08111809A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/544,453 external-priority patent/US7759775B2/en
Application filed filed Critical
Publication of HK1115937A1 publication Critical patent/HK1115937A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2924/14—Integrated circuits
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
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Abstract

The invention discloses a small form factor integrated circuit package for a high current semiconductor power device. The package includes a lead frame which is relatively thick and made of a single specification material with a thickness greater than 8mil. The lead frame has a plurality of lead frame and a first lead frame area, wherein, the first lead frame area includes a chip soldering thereon, a lead linking area arranged on the same surface with the top surface of the chip, a aluminum-made large-diameter linking conducting wire connected to the leads, and a resin body which comes from at least one part of a sealing chip, a linking conducting wire and the lead frame.
HK08111809A 2006-10-06 2008-10-27 High current semiconductor power device soic package HK1115937A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/544,453 US7759775B2 (en) 2004-07-20 2006-10-06 High current semiconductor power device SOIC package

Publications (1)

Publication Number Publication Date
HK1115937A1 true HK1115937A1 (en) 2008-12-12

Family

ID=39422986

Family Applications (1)

Application Number Title Priority Date Filing Date
HK08111809A HK1115937A1 (en) 2006-10-06 2008-10-27 High current semiconductor power device soic package

Country Status (3)

Country Link
CN (2) CN101794760B (en)
HK (1) HK1115937A1 (en)
TW (1) TWI350582B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9041170B2 (en) * 2013-04-02 2015-05-26 Infineon Technologies Austria Ag Multi-level semiconductor package
JP6325975B2 (en) * 2014-12-19 2018-05-16 新光電気工業株式会社 Lead frame, semiconductor device
DE102015101674B4 (en) 2015-02-05 2021-04-29 Infineon Technologies Austria Ag Semiconductor chip housing with contact pins on short side edges
US10325878B2 (en) * 2016-06-30 2019-06-18 Kulicke And Soffa Industries, Inc. Methods for generating wire loop profiles for wire loops, and methods for checking for adequate clearance between adjacent wire loops
CN109727943A (en) * 2019-02-27 2019-05-07 无锡新洁能股份有限公司 A kind of package structure of semiconductor device and its manufacturing method with low thermal resistance
CN110164831A (en) * 2019-05-31 2019-08-23 无锡电基集成科技有限公司 Conducive to the high-current semiconductor power device and its manufacturing method of welding
CN110164832A (en) * 2019-05-31 2019-08-23 无锡电基集成科技有限公司 High-current semiconductor power device
CN215266282U (en) * 2021-04-14 2021-12-21 苏州汇川技术有限公司 Packaging structure of power semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6114750A (en) * 1996-10-01 2000-09-05 International Rectifier Corp. Surface mount TO-220 package and process for the manufacture thereof

Also Published As

Publication number Publication date
TW200818438A (en) 2008-04-16
CN101794760A (en) 2010-08-04
TWI350582B (en) 2011-10-11
CN101174602A (en) 2008-05-07
CN101174602B (en) 2011-10-05
CN101794760B (en) 2012-05-23

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