HK1001927A1 - Sub-micron device fabrication - Google Patents

Sub-micron device fabrication

Info

Publication number
HK1001927A1
HK1001927A1 HK98100874A HK98100874A HK1001927A1 HK 1001927 A1 HK1001927 A1 HK 1001927A1 HK 98100874 A HK98100874 A HK 98100874A HK 98100874 A HK98100874 A HK 98100874A HK 1001927 A1 HK1001927 A1 HK 1001927A1
Authority
HK
Hong Kong
Prior art keywords
sub
device fabrication
micron device
micron
fabrication
Prior art date
Application number
HK98100874A
Other languages
English (en)
Inventor
Donald Lawrence White
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Publication of HK1001927A1 publication Critical patent/HK1001927A1/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/28—Phase shift masks [PSM]; PSM blanks; Preparation thereof with three or more diverse phases on the same PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electron Beam Exposure (AREA)
HK98100874A 1991-03-22 1998-02-05 Sub-micron device fabrication HK1001927A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/673,626 US5217831A (en) 1991-03-22 1991-03-22 Sub-micron device fabrication

Publications (1)

Publication Number Publication Date
HK1001927A1 true HK1001927A1 (en) 1998-07-17

Family

ID=24703433

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98100874A HK1001927A1 (en) 1991-03-22 1998-02-05 Sub-micron device fabrication

Country Status (7)

Country Link
US (1) US5217831A (de)
EP (1) EP0505103B1 (de)
JP (1) JPH0594001A (de)
KR (1) KR100211624B1 (de)
CA (1) CA2061622C (de)
DE (1) DE69221350T2 (de)
HK (1) HK1001927A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3179520B2 (ja) * 1991-07-11 2001-06-25 株式会社日立製作所 半導体装置の製造方法
US5821033A (en) * 1992-09-18 1998-10-13 Pinnacle Research Institute, Inc. Photolithographic production of microprotrusions for use as a space separator in an electrical storage device
US5867363A (en) * 1992-09-18 1999-02-02 Pinnacle Research Institute, Inc. Energy storage device
US5279925A (en) * 1992-12-16 1994-01-18 At&T Bell Laboratories Projection electron lithographic procedure
JP2546135B2 (ja) * 1993-05-31 1996-10-23 日本電気株式会社 半導体微細形状の形成方法、ＩｎＰ回折格子の製造方法および分布帰還型レーザの製造方法
US5980977A (en) * 1996-12-09 1999-11-09 Pinnacle Research Institute, Inc. Method of producing high surface area metal oxynitrides as substrates in electrical energy storage
US6248486B1 (en) * 1998-11-23 2001-06-19 U.S. Philips Corporation Method of detecting aberrations of an optical imaging system
US6368763B2 (en) 1998-11-23 2002-04-09 U.S. Philips Corporation Method of detecting aberrations of an optical imaging system
US6361911B1 (en) 2000-04-17 2002-03-26 Taiwan Semiconductor Manufacturing Company Using a dummy frame pattern to improve CD control of VSB E-beam exposure system and the proximity effect of laser beam exposure system and Gaussian E-beam exposure system
US7508527B2 (en) * 2005-04-11 2009-03-24 Zetetic Institute Apparatus and method of in situ and ex situ measurement of spatial impulse response of an optical system using phase-shifting point-diffraction interferometry
WO2006124707A2 (en) * 2005-05-18 2006-11-23 Zetetic Institute Apparatus and method for in situ and ex situ measurements of optical system flare
US11528971B2 (en) * 2018-05-13 2022-12-20 Bob Michael Lansdorp Jewelry image projection and method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4665007A (en) * 1985-08-19 1987-05-12 International Business Machines Corporation Planarization process for organic filling of deep trenches
JP2710967B2 (ja) * 1988-11-22 1998-02-10 株式会社日立製作所 集積回路装置の製造方法
US5091979A (en) * 1991-03-22 1992-02-25 At&T Bell Laboratories Sub-micron imaging

Also Published As

Publication number Publication date
EP0505103A1 (de) 1992-09-23
DE69221350T2 (de) 1997-11-20
EP0505103B1 (de) 1997-08-06
JPH0594001A (ja) 1993-04-16
DE69221350D1 (de) 1997-09-11
CA2061622C (en) 1998-09-22
US5217831A (en) 1993-06-08
CA2061622A1 (en) 1992-09-23
KR100211624B1 (ko) 1999-08-02

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)