GR3002612T3 - Fast control circuit for a power-field-effect transistor - Google Patents

Fast control circuit for a power-field-effect transistor

Info

Publication number
GR3002612T3
GR3002612T3 GR91401243T GR910401243T GR3002612T3 GR 3002612 T3 GR3002612 T3 GR 3002612T3 GR 91401243 T GR91401243 T GR 91401243T GR 910401243 T GR910401243 T GR 910401243T GR 3002612 T3 GR3002612 T3 GR 3002612T3
Authority
GR
Greece
Prior art keywords
power
field
control circuit
effect transistor
fast control
Prior art date
Application number
GR91401243T
Other languages
English (en)
Inventor
Michel Nollet
Original Assignee
Lgt Lab Gen Telecomm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lgt Lab Gen Telecomm filed Critical Lgt Lab Gen Telecomm
Publication of GR3002612T3 publication Critical patent/GR3002612T3/el

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)
  • Power Conversion In General (AREA)
  • Amplifiers (AREA)
  • Direct Current Feeding And Distribution (AREA)
GR91401243T 1985-12-13 1991-08-27 Fast control circuit for a power-field-effect transistor GR3002612T3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8518526A FR2591831A1 (fr) 1985-12-13 1985-12-13 Circuit de commande rapide de transistors a effet de champ de puissance

Publications (1)

Publication Number Publication Date
GR3002612T3 true GR3002612T3 (en) 1993-01-25

Family

ID=9325785

Family Applications (1)

Application Number Title Priority Date Filing Date
GR91401243T GR3002612T3 (en) 1985-12-13 1991-08-27 Fast control circuit for a power-field-effect transistor

Country Status (13)

Country Link
US (1) US4767952A (el)
EP (1) EP0230810B1 (el)
JP (1) JPH0812990B2 (el)
AR (1) AR241300A1 (el)
AT (1) ATE64251T1 (el)
CA (1) CA1261391A (el)
DE (1) DE3679654D1 (el)
DK (1) DK592486A (el)
ES (1) ES2022140B3 (el)
FR (1) FR2591831A1 (el)
GR (1) GR3002612T3 (el)
HK (1) HK6894A (el)
MX (1) MX168067B (el)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4937470A (en) * 1988-05-23 1990-06-26 Zeiler Kenneth T Driver circuit for power transistors
US4873460A (en) * 1988-11-16 1989-10-10 California Institute Of Technology Monolithic transistor gate energy recovery system
WO1990013178A1 (en) * 1989-04-19 1990-11-01 Sundstrand Corporation Gate drive circuit for power transistor
US4970420A (en) * 1989-07-13 1990-11-13 Westinghouse Electric Corp. Power field effect transistor drive circuit
US5264736A (en) * 1992-04-28 1993-11-23 Raytheon Company High frequency resonant gate drive for a power MOSFET
US5910746A (en) * 1993-03-26 1999-06-08 Sundstrand Corporation Gate drive for a power switching device
US5635867A (en) * 1994-07-20 1997-06-03 Lucent Technologies Inc. High performance drive structure for MOSFET power switches
DE19732094A1 (de) * 1997-07-25 1999-01-28 Bosch Gmbh Robert Steuerschaltung für einen Gleichstrommotor
DE19732098A1 (de) * 1997-07-25 1999-01-28 Bosch Gmbh Robert Steuerschaltung für einen Gleichstrommotor
DE102005001322B4 (de) * 2005-01-11 2010-07-08 Dspace Digital Signal Processing And Control Engineering Gmbh Verfahren und Schaltung zur galvanisch getrennten Übertragung eines Signals
GB2559423B8 (en) * 2017-02-07 2023-06-28 Heyday Integrated Circuits Sas An isolated high side drive circuit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3045771A1 (de) * 1980-12-04 1982-07-08 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zum ansteuern eines leistungs-fet
EP0053709B1 (de) * 1980-12-04 1985-03-06 Siemens Aktiengesellschaft Schaltungsanordnung zum Ansteuern mindestens eines Leistungs-FET
AT377138B (de) * 1981-11-26 1985-02-11 Zumtobel Ag Schaltungsanordnung fuer eine potentialgetrennte ansteuerung wenigstens eines feldeffekttransistors
US4438356A (en) * 1982-03-24 1984-03-20 International Rectifier Corporation Solid state relay circuit employing MOSFET power switching devices
FR2558315B1 (fr) * 1984-01-16 1986-06-06 Dassault Electronique Dispositif electronique amplificateur d'impulsions isole, en particulier pour sortie en haute tension
US4672327A (en) * 1986-03-10 1987-06-09 Rca Corporation Self-biasing for enhancement-mode field effect transistors

Also Published As

Publication number Publication date
EP0230810A1 (fr) 1987-08-05
DK592486D0 (da) 1986-12-10
DE3679654D1 (de) 1991-07-11
MX168067B (es) 1993-05-03
JPH01117414A (ja) 1989-05-10
US4767952A (en) 1988-08-30
CA1261391A (fr) 1989-09-26
JPH0812990B2 (ja) 1996-02-07
FR2591831A1 (fr) 1987-06-19
ATE64251T1 (de) 1991-06-15
EP0230810B1 (fr) 1991-06-05
HK6894A (en) 1994-02-04
AR241300A1 (es) 1992-04-30
DK592486A (da) 1987-06-14
ES2022140B3 (es) 1991-12-01

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