GR1007458B - Βελτιωση της ενισχυσης δεσμης λειζερ μεσω διπλης διελευσης της δεσμης απο τον ενισχυτη - Google Patents

Βελτιωση της ενισχυσης δεσμης λειζερ μεσω διπλης διελευσης της δεσμης απο τον ενισχυτη

Info

Publication number
GR1007458B
GR1007458B GR20100100687A GR20100100687A GR1007458B GR 1007458 B GR1007458 B GR 1007458B GR 20100100687 A GR20100100687 A GR 20100100687A GR 20100100687 A GR20100100687 A GR 20100100687A GR 1007458 B GR1007458 B GR 1007458B
Authority
GR
Greece
Prior art keywords
amplifier
amplification
laser beam
passage
improvement
Prior art date
Application number
GR20100100687A
Other languages
English (en)
Inventor
Wolf Dietrich Carl Von Klitzing
Βασιλικη Μπολπαση
Original Assignee
Ιδρυμα Τεχνολογιας Και Ερευνας-Ινστιτουτο Ηλεκτρονικης Δομης Και Λειζερ,
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ιδρυμα Τεχνολογιας Και Ερευνας-Ινστιτουτο Ηλεκτρονικης Δομης Και Λειζερ, filed Critical Ιδρυμα Τεχνολογιας Και Ερευνας-Ινστιτουτο Ηλεκτρονικης Δομης Και Λειζερ,
Priority to GR20100100687A priority Critical patent/GR1007458B/el
Publication of GR1007458B publication Critical patent/GR1007458B/el
Priority to PCT/EP2011/071092 priority patent/WO2012072524A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
    • H01S5/5018—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive using two or more amplifiers or multiple passes through the same amplifier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/02—ASE (amplified spontaneous emission), noise; Reduction thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0064—Anti-reflection components, e.g. optical isolators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Σημαντικότατη βελτίωση της απόδοσης ενισχυτών δεσμών λέιζερ ημιαγωγικού τύπου, με ενεργό περιοχή σφηνοειδούς σχήματος, μέσω της διπλής διέλευσης της δέσμης λέιζερ από την ενεργό περιοχή του ενισχυτή. Η δέσμη προς ενίσχυση εισέρχεται από τη μεγάλη πλευρά του ενισχυτή, και όχι από τη μικρή όπως συμβαίνει κατά τη συμβατική πρακτική της μονής διέλευσης. Μετά την πρώτη διέλευση και αφού έχει υποστεί το πρώτο στάδιο ενίσχυσης, οδηγείται πίσω στην ενεργό περιοχή για τη δεύτερη διέλευση με τη βοήθεια μιας ανακλαστικής επιφάνειας, είτε εξωτερικά του ενισχυτή, είτε εφαρμοσμένη στην μικρή επιφάνεια του.
GR20100100687A 2010-11-29 2010-11-29 Βελτιωση της ενισχυσης δεσμης λειζερ μεσω διπλης διελευσης της δεσμης απο τον ενισχυτη GR1007458B (el)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GR20100100687A GR1007458B (el) 2010-11-29 2010-11-29 Βελτιωση της ενισχυσης δεσμης λειζερ μεσω διπλης διελευσης της δεσμης απο τον ενισχυτη
PCT/EP2011/071092 WO2012072524A1 (en) 2010-11-29 2011-11-26 A double-pass tapered laser amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GR20100100687A GR1007458B (el) 2010-11-29 2010-11-29 Βελτιωση της ενισχυσης δεσμης λειζερ μεσω διπλης διελευσης της δεσμης απο τον ενισχυτη

Publications (1)

Publication Number Publication Date
GR1007458B true GR1007458B (el) 2011-11-11

Family

ID=44259760

Family Applications (1)

Application Number Title Priority Date Filing Date
GR20100100687A GR1007458B (el) 2010-11-29 2010-11-29 Βελτιωση της ενισχυσης δεσμης λειζερ μεσω διπλης διελευσης της δεσμης απο τον ενισχυτη

Country Status (2)

Country Link
GR (1) GR1007458B (el)
WO (1) WO2012072524A1 (el)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108429122B (zh) * 2017-02-15 2020-10-27 中国科学院物理研究所 一种锥形激光器的锁定方法
CN110112648B (zh) * 2019-04-08 2023-06-02 中国科学院武汉物理与数学研究所 在单程和双程复合模式下的半导体锥形激光放大系统

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63108788A (ja) * 1986-10-27 1988-05-13 Hitachi Ltd 光集積回路
EP0352974A2 (en) * 1988-07-29 1990-01-31 AT&T Corp. Polarization independent optical amplifier apparatus
JPH0567845A (ja) * 1991-03-15 1993-03-19 Tokyo Inst Of Technol 光増幅器
US6456429B1 (en) * 2000-11-15 2002-09-24 Onetta, Inc. Double-pass optical amplifier
US20020186738A1 (en) * 2001-06-06 2002-12-12 Ungar Jeffrey E. Laser diode with an internal mirror

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63108788A (ja) * 1986-10-27 1988-05-13 Hitachi Ltd 光集積回路
EP0352974A2 (en) * 1988-07-29 1990-01-31 AT&T Corp. Polarization independent optical amplifier apparatus
JPH0567845A (ja) * 1991-03-15 1993-03-19 Tokyo Inst Of Technol 光増幅器
US6456429B1 (en) * 2000-11-15 2002-09-24 Onetta, Inc. Double-pass optical amplifier
US20020186738A1 (en) * 2001-06-06 2002-12-12 Ungar Jeffrey E. Laser diode with an internal mirror

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
HUANG D ET AL: "PACKAGED DOUBLE-PASS TRAVELLING-WAVE SEMICONDUCTOR LASER AMPLIFIERS", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 27, no. 7, 28 March 1991 (1991-03-28), pages 571 - 572, XP000212705, ISSN: 0013-5194 *
HUANG Y ET AL: "SATURATION CHARACTERISTICS OF GA0.68IN0.32AS/GAINASP/INP TENSILE-STRAINED QUANTUM-WELL SEMICONDUCTOR LASER AMPLIFIERS WITH TAPERED-WAVEGUIDE STRUCTURES", IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE SERVICE CENTER, PISCATAWAY, NJ, USA, vol. 30, no. 9, 1 September 1994 (1994-09-01), pages 2034 - 2039, XP000444917, ISSN: 0018-9197, DOI: DOI:10.1109/3.309861 *
V. BOLPASI ET AL: "Double-pass tapered amplifier diode laser with an output power of 1 W for an injection power of only 200?[mu]W", REVIEW OF SCIENTIFIC INSTRUMENTS, vol. 81, no. 11, 30 November 2010 (2010-11-30), pages 113108 - 113108, XP055002918, ISSN: 0034-6748, DOI: 10.1063/1.3501966 *
YU O KOSTIN ET AL: "Novel semiconductor optical amplifier with tapered active channel", ADVANCED OPTOELECTRONICS AND LASERS (CAOL), 2010 INTERNATIONAL CONFERENCE ON, IEEE, PISCATAWAY, NJ, USA, 10 September 2010 (2010-09-10), pages 175 - 176, XP031800284, ISBN: 978-1-4244-7043-3 *

Also Published As

Publication number Publication date
WO2012072524A1 (en) 2012-06-07
WO2012072524A8 (en) 2013-01-10

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