GEP20001974B - Method for Production of Boron Carbide Pellicle
- Google Patents
Method for Production of Boron Carbide Pellicle
Info
Publication number
GEP20001974B
GEP20001974BGEAP19984550AGEAP1998004550AGEP20001974BGE P20001974 BGEP20001974 BGE P20001974BGE AP19984550 AGEAP19984550 AGE AP19984550AGE AP1998004550 AGEAP1998004550 AGE AP1998004550AGE P20001974 BGEP20001974 BGE P20001974B
Authority
GE
Georgia
Prior art keywords
pellicle
production
boron carbide
laser radiation
base
Prior art date
Application number
GEAP19984550A
Inventor
Archil Eristavui
Paata Kervalishvili
Marlen Kalandadze
Georgi Kalandadze
Sulkhan Shalamberidze
Original Assignee
Archil Eristavui
Paata Kervalishvili
Marlen Kalandadze
Georgi Kalandadze
Sulkhan Shalamberidze
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Archil Eristavui, Paata Kervalishvili, Marlen Kalandadze, Georgi Kalandadze, Sulkhan ShalamberidzefiledCriticalArchil Eristavui
Priority to GEAP19984550ApriorityCriticalpatent/GEP20001974B/en
Publication of GEP20001974BpublicationCriticalpatent/GEP20001974B/en
1. Technical Result Improvement of technological process. 2. Essence A method comprises vaporization of carbide boron deposition target by means of pulse laser radiation and bulk sputtering the developed vapor on the base. The duration of the laser radiation pulse is no more than 15 Ns, the frequency is no more than 100 Hz, the power density 2,5x109 - 5x109 W/cm². The bulk sputtering is effected on the base heated to temperature 900-1000°C 3. Field of Application Microelectronics
GEAP19984550A1998-10-291998-10-29Method for Production of Boron Carbide Pellicle
GEP20001974B
(en)