GB998211A - Method of producing monocrystalline semiconductor material - Google Patents

Method of producing monocrystalline semiconductor material

Info

Publication number
GB998211A
GB998211A GB496/63A GB49663A GB998211A GB 998211 A GB998211 A GB 998211A GB 496/63 A GB496/63 A GB 496/63A GB 49663 A GB49663 A GB 49663A GB 998211 A GB998211 A GB 998211A
Authority
GB
United Kingdom
Prior art keywords
film
germanium
stream
substrate
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB496/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of GB998211A publication Critical patent/GB998211A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23N—REGULATING OR CONTROLLING COMBUSTION
    • F23N2225/00—Measuring
    • F23N2225/02—Measuring filling height in burners
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23N—REGULATING OR CONTROLLING COMBUSTION
    • F23N2235/00—Valves, nozzles or pumps
    • F23N2235/02—Air or combustion gas valves or dampers
    • F23N2235/06—Air or combustion gas valves or dampers at the air intake
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23N—REGULATING OR CONTROLLING COMBUSTION
    • F23N2235/00—Valves, nozzles or pumps
    • F23N2235/12—Fuel valves
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

<PICT:0998211/C6-C7/1> Monocrystalline semi-conductor material, such as germanium, is produced from a gas phase by exposing a substrate to a stream of gas containing molecules which include reducible atoms of the semi-conductor material, at a temperature at which the molecules adhere to the substrate surface but do not decompose, and then reducing the atoms of the molecules adhering to the substrate surface followed by epitaxial growth, on the reduced atoms, of additional semi-conductor material from the gas until the desired thickness is obtained. In one embodiment, Fig. 1, germanium tetrachloride in a dry deoxidized hydrogen stream, in a concentration of about 0.1 mol per cent, is passed over a quartz substrate 23, heated to 500 DEG C., producing an adherent film of HGeCl3. The film is reduced to a germanium film in dry, deoxidized hydrogen at 650 DEG C. and the quartz surface is then exposed to a stream of GeCl4 in H2, as before, together with 0.001 mol per cent of boron tribromide at 500 DEG C. to deposit epitaxially P-type germanium on the germanium-coated quartz surface. The flow of BBr3 is interrupted and a stream of PCl3 is substituted, growing an additional epitaxial layer of N-type germanium. Other possible dopant sources are AsCl3 and AsBr3. A further embodiment, Fig. 3 (not shown), utilizes an intermediate oxidation step providing a mask for producing epitaxial growth on selected areas. In this case an anodized molybdenum or tungsten substrate is provided with a polar gas film by exposure to SiCl4 gas in H2 at between 730-910 DEG C., which is then reduced to silicon in a hydrogen stream at 950 DEG C., so producing a silicon film on the anodized surface. The silicon film is then oxidized to SiO2 by exposure to water vapour or oxygen and, after selective etching in hydrofluoric acid, epitaxial growth through the masking pattern is continued, providing a film of HSiCl3. BBr and subsequently PCl3 gases are introduced at this stage, providing the necessary doping to form p-n junctions.
GB496/63A 1962-01-29 1963-01-04 Method of producing monocrystalline semiconductor material Expired GB998211A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US169276A US3152932A (en) 1962-01-29 1962-01-29 Reduction in situ of a dipolar molecular gas adhering to a substrate

Publications (1)

Publication Number Publication Date
GB998211A true GB998211A (en) 1965-07-14

Family

ID=22614962

Family Applications (1)

Application Number Title Priority Date Filing Date
GB496/63A Expired GB998211A (en) 1962-01-29 1963-01-04 Method of producing monocrystalline semiconductor material

Country Status (4)

Country Link
US (1) US3152932A (en)
DE (1) DE1244112B (en)
FR (1) FR1345944A (en)
GB (1) GB998211A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2182061A (en) * 1985-10-24 1987-05-07 Rca Corp Vapor deposition apparatus

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3354004A (en) * 1964-11-17 1967-11-21 Ibm Method for enhancing efficiency of recovery of semi-conductor material in perturbable disproportionation systems
US3361600A (en) * 1965-08-09 1968-01-02 Ibm Method of doping epitaxially grown semiconductor material
US3345223A (en) * 1965-09-28 1967-10-03 Ibm Epitaxial deposition of semiconductor materials
US3645785A (en) * 1969-11-12 1972-02-29 Texas Instruments Inc Ohmic contact system
CN116397115A (en) * 2023-03-23 2023-07-07 山东有研国晶辉新材料有限公司 Preparation method of metal germanium

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE883784C (en) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Process for the production of surface rectifiers and crystal amplifier layers from elements
BE509317A (en) * 1951-03-07 1900-01-01
DE885756C (en) * 1951-10-08 1953-06-25 Telefunken Gmbh Process for the production of p- or n-conducting layers
GB778383A (en) * 1953-10-02 1957-07-03 Standard Telephones Cables Ltd Improvements in or relating to the production of material for semi-conductors
NL130620C (en) * 1954-05-18 1900-01-01
FR1141561A (en) * 1956-01-20 1957-09-04 Cedel Method and means for the manufacture of semiconductor materials

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2182061A (en) * 1985-10-24 1987-05-07 Rca Corp Vapor deposition apparatus
GB2182061B (en) * 1985-10-24 1990-02-21 Rca Corp Substrate treatment apparatus

Also Published As

Publication number Publication date
FR1345944A (en) 1963-12-13
US3152932A (en) 1964-10-13
DE1244112B (en) 1967-07-13

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