GB993660A - Apparatus for measuring the high frequency current amplification factor of transistors - Google Patents

Apparatus for measuring the high frequency current amplification factor of transistors

Info

Publication number
GB993660A
GB993660A GB32584/62A GB3258462A GB993660A GB 993660 A GB993660 A GB 993660A GB 32584/62 A GB32584/62 A GB 32584/62A GB 3258462 A GB3258462 A GB 3258462A GB 993660 A GB993660 A GB 993660A
Authority
GB
United Kingdom
Prior art keywords
transistor
high frequency
emitter
current
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB32584/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB993660A publication Critical patent/GB993660A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2608Circuits therefor for testing bipolar transistors
    • G01R31/2614Circuits therefor for testing bipolar transistors for measuring gain factor thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

993, 660. Measuring transistor characteristics. S. YAGYU. Aug. 24, 1962 [Aug. 31, 1961], No. 32584/62. Heading G1U. An apparatus consisting of the circuits 1-4 for measuring the high frequency current amplification factor and load characteristics of a transistor Tr includes a high frequency oscillator circuit 1 which comprises an oscillator OSC connected through a condenser C 1 and resistor R 1 to the base of the transistor, the base also being connected through an inductance L 1 to ground. The emitter of the transistor is connected through a resistor Re to a bias source of pulsating current E e , and is grounded through an emitter condenser C 2 , these components forming part 2 of the apparatus. The collector of the transistor is connected via a collector circuit 3 to an observation circuit 4 wherein the output from the collector circuit is applied through an amplifier A along one deflection axis of an oscilloscope B, and the potential from the bias source Ee is applied along the other deflection axis. The collector circuit 3 includes a serially connected collector inductance L 2 , a switch S shunted by a load resistor R L and a variable voltage source E c . The test arrangement, by using a pulsating emitter bias current provided from the source E e , eliminates the need for adjustment of the bias current and recalibration of the apparatus for different transistors. With the switch S closed the relation between current amplification factor and emitter current at the high frequency provided by the oscillator OSC is indicated on the oscilloscope, whilst with the switch open a load characteristic may be shown directly. By adjusting the voltage source E c the variation of the characteristics under different operating conditions of the transistor may be indicated.
GB32584/62A 1961-08-31 1962-08-24 Apparatus for measuring the high frequency current amplification factor of transistors Expired GB993660A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3107961 1961-08-31

Publications (1)

Publication Number Publication Date
GB993660A true GB993660A (en) 1965-06-02

Family

ID=12321407

Family Applications (1)

Application Number Title Priority Date Filing Date
GB32584/62A Expired GB993660A (en) 1961-08-31 1962-08-24 Apparatus for measuring the high frequency current amplification factor of transistors

Country Status (1)

Country Link
GB (1) GB993660A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101825681A (en) * 2010-04-29 2010-09-08 上海宏力半导体制造有限公司 Method for measuring current amplification factor of bipolar transistor
CN111308304A (en) * 2020-03-02 2020-06-19 上海料聚微电子有限公司 Circuit and method for detecting current amplification factor of bipolar transistor
CN113466652A (en) * 2021-07-13 2021-10-01 苏州瀚宸科技有限公司 On-chip detection method and system for triode parameters

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101825681A (en) * 2010-04-29 2010-09-08 上海宏力半导体制造有限公司 Method for measuring current amplification factor of bipolar transistor
CN101825681B (en) * 2010-04-29 2013-07-31 上海宏力半导体制造有限公司 Method for measuring current amplification factor of bipolar transistor
CN111308304A (en) * 2020-03-02 2020-06-19 上海料聚微电子有限公司 Circuit and method for detecting current amplification factor of bipolar transistor
CN111308304B (en) * 2020-03-02 2022-06-28 上海料聚微电子有限公司 Circuit and method for detecting current amplification factor of bipolar transistor
CN113466652A (en) * 2021-07-13 2021-10-01 苏州瀚宸科技有限公司 On-chip detection method and system for triode parameters

Similar Documents

Publication Publication Date Title
GB743824A (en) Semi-conductor direct current stabilization circuit
GB1127801A (en) Signal translating system
GB1319717A (en) Integrated circuit amplifier having a gain-versus-frequency characteristic
SE320706B (en)
GB748668A (en) Improvements in or relating to amplifier circuit arrangements
GB993660A (en) Apparatus for measuring the high frequency current amplification factor of transistors
GB755870A (en) Improvements in or relating to transistor circuits
GB1366271A (en) Signal control circuit
US4178559A (en) Amplifier distortion reduction apparatus
GB764383A (en) Transistor reactance device
GB1187145A (en) Improved Vehicle Presence Detector System.
US3181079A (en) Series energized transistorised amplifier having a high input resistance
US3244995A (en) Amplifier including a common emitter and common collector transistor providing regenerative feedback
GB1238698A (en)
GB1055411A (en) High input impedance direct-coupled transistor amplifier
GB1006907A (en) Improvements in or relating to circuits including a tunnel diode
GB936629A (en) Improvements in and relating to amplifiers employing transistors
GB909776A (en) A transistor amplifier with gain control
US3597601A (en) Arrangement for generating the derivative of stepped voltage function
GB840953A (en) Improvements in or relating to alternating current amplifier circuits
GB1028332A (en) Improvements relating to variable gain transistor amplifiers
SU542331A1 (en) Amplitude limiter
OSADCHUK et al. A generator operating on a compound transistor
GB1065503A (en) Improvements in amplifiers
GB1005020A (en) Improvements in or relating to radar display apparatus