GB993660A - Apparatus for measuring the high frequency current amplification factor of transistors - Google Patents
Apparatus for measuring the high frequency current amplification factor of transistorsInfo
- Publication number
- GB993660A GB993660A GB32584/62A GB3258462A GB993660A GB 993660 A GB993660 A GB 993660A GB 32584/62 A GB32584/62 A GB 32584/62A GB 3258462 A GB3258462 A GB 3258462A GB 993660 A GB993660 A GB 993660A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistor
- high frequency
- emitter
- current
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/2614—Circuits therefor for testing bipolar transistors for measuring gain factor thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
993, 660. Measuring transistor characteristics. S. YAGYU. Aug. 24, 1962 [Aug. 31, 1961], No. 32584/62. Heading G1U. An apparatus consisting of the circuits 1-4 for measuring the high frequency current amplification factor and load characteristics of a transistor Tr includes a high frequency oscillator circuit 1 which comprises an oscillator OSC connected through a condenser C 1 and resistor R 1 to the base of the transistor, the base also being connected through an inductance L 1 to ground. The emitter of the transistor is connected through a resistor Re to a bias source of pulsating current E e , and is grounded through an emitter condenser C 2 , these components forming part 2 of the apparatus. The collector of the transistor is connected via a collector circuit 3 to an observation circuit 4 wherein the output from the collector circuit is applied through an amplifier A along one deflection axis of an oscilloscope B, and the potential from the bias source Ee is applied along the other deflection axis. The collector circuit 3 includes a serially connected collector inductance L 2 , a switch S shunted by a load resistor R L and a variable voltage source E c . The test arrangement, by using a pulsating emitter bias current provided from the source E e , eliminates the need for adjustment of the bias current and recalibration of the apparatus for different transistors. With the switch S closed the relation between current amplification factor and emitter current at the high frequency provided by the oscillator OSC is indicated on the oscilloscope, whilst with the switch open a load characteristic may be shown directly. By adjusting the voltage source E c the variation of the characteristics under different operating conditions of the transistor may be indicated.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3107961 | 1961-08-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB993660A true GB993660A (en) | 1965-06-02 |
Family
ID=12321407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB32584/62A Expired GB993660A (en) | 1961-08-31 | 1962-08-24 | Apparatus for measuring the high frequency current amplification factor of transistors |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB993660A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101825681A (en) * | 2010-04-29 | 2010-09-08 | 上海宏力半导体制造有限公司 | Method for measuring current amplification factor of bipolar transistor |
CN111308304A (en) * | 2020-03-02 | 2020-06-19 | 上海料聚微电子有限公司 | Circuit and method for detecting current amplification factor of bipolar transistor |
CN113466652A (en) * | 2021-07-13 | 2021-10-01 | 苏州瀚宸科技有限公司 | On-chip detection method and system for triode parameters |
-
1962
- 1962-08-24 GB GB32584/62A patent/GB993660A/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101825681A (en) * | 2010-04-29 | 2010-09-08 | 上海宏力半导体制造有限公司 | Method for measuring current amplification factor of bipolar transistor |
CN101825681B (en) * | 2010-04-29 | 2013-07-31 | 上海宏力半导体制造有限公司 | Method for measuring current amplification factor of bipolar transistor |
CN111308304A (en) * | 2020-03-02 | 2020-06-19 | 上海料聚微电子有限公司 | Circuit and method for detecting current amplification factor of bipolar transistor |
CN111308304B (en) * | 2020-03-02 | 2022-06-28 | 上海料聚微电子有限公司 | Circuit and method for detecting current amplification factor of bipolar transistor |
CN113466652A (en) * | 2021-07-13 | 2021-10-01 | 苏州瀚宸科技有限公司 | On-chip detection method and system for triode parameters |
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