GB9915310D0 - Method of etching silicon-based material - Google Patents
Method of etching silicon-based materialInfo
- Publication number
- GB9915310D0 GB9915310D0 GBGB9915310.8A GB9915310A GB9915310D0 GB 9915310 D0 GB9915310 D0 GB 9915310D0 GB 9915310 A GB9915310 A GB 9915310A GB 9915310 D0 GB9915310 D0 GB 9915310D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- based material
- etching silicon
- etching
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000002210 silicon-based material Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10185186A JP3067739B2 (en) | 1998-06-30 | 1998-06-30 | Etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9915310D0 true GB9915310D0 (en) | 1999-09-01 |
GB2339075A GB2339075A (en) | 2000-01-12 |
Family
ID=16166362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9915310A Withdrawn GB2339075A (en) | 1998-06-30 | 1999-06-30 | A method of etching silicon based materials |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP3067739B2 (en) |
KR (1) | KR100329853B1 (en) |
GB (1) | GB2339075A (en) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4666555A (en) * | 1985-08-23 | 1987-05-19 | Intel Corporation | Plasma etching of silicon using fluorinated gas mixtures |
JPH0621018A (en) * | 1992-06-29 | 1994-01-28 | Sony Corp | Dry etching method |
JPH07263415A (en) * | 1994-03-18 | 1995-10-13 | Fujitsu Ltd | Method of manufacturing semiconductor device |
US5759920A (en) * | 1996-11-15 | 1998-06-02 | International Business Machines Corporation | Process for making doped polysilicon layers on sidewalls |
-
1998
- 1998-06-30 JP JP10185186A patent/JP3067739B2/en not_active Expired - Lifetime
-
1999
- 1999-06-30 KR KR1019990025580A patent/KR100329853B1/en not_active IP Right Cessation
- 1999-06-30 GB GB9915310A patent/GB2339075A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JP3067739B2 (en) | 2000-07-24 |
KR100329853B1 (en) | 2002-03-22 |
KR20000006564A (en) | 2000-01-25 |
JP2000021848A (en) | 2000-01-21 |
GB2339075A (en) | 2000-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU2864499A (en) | Method of etching | |
SG72964A1 (en) | Etching method | |
EP1143496A4 (en) | Plasma etching method | |
PL342469A1 (en) | Method of obtaining stilbenic compounds | |
EP1041613A4 (en) | Etching process | |
PL341648A1 (en) | Novel method of obtaining kethymin | |
EP1115574A4 (en) | Method of adhering ceramic foams | |
GB2321765B (en) | Method of plasma etching | |
PL334333A1 (en) | Method of obtaining cyclodextrin | |
EP0997450A4 (en) | METHOD OF REDUCING NO x | |
PL335074A1 (en) | Method of obtaining eprosartane | |
PL334901A1 (en) | Method of obtaining benzothiazolones | |
GB2339554B (en) | Etching method | |
EP1225621A4 (en) | Method of etching | |
PL339188A1 (en) | Method of obtaining oxaphosphorin-2-amines | |
GB2357917B (en) | Method of fabrication of step edge | |
GB9915310D0 (en) | Method of etching silicon-based material | |
PL325802A1 (en) | Method of obtaining polyestroles | |
PL324254A1 (en) | Method of obtaining /z/-tricos-14-en-6-one | |
PL330246A1 (en) | Method of obtaining n-tert-butoxycarbonyl-l-lysine | |
PL324996A1 (en) | Method of obtaining polyphenylsilsequinoxanes | |
PL324956A1 (en) | Method of obtaining polyphenylborosiloxanes | |
PL325140A1 (en) | Method of obtaining cumene | |
AUPP389898A0 (en) | Improved etching method | |
PL344788A1 (en) | Method of application |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |