GB9911077D0 - Apparatus for depositing a thin film on a substrate - Google Patents
Apparatus for depositing a thin film on a substrateInfo
- Publication number
- GB9911077D0 GB9911077D0 GBGB9911077.7A GB9911077A GB9911077D0 GB 9911077 D0 GB9911077 D0 GB 9911077D0 GB 9911077 A GB9911077 A GB 9911077A GB 9911077 D0 GB9911077 D0 GB 9911077D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- depositing
- substrate
- thin film
- thin
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Inorganic Chemistry (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9167521A JPH1116838A (en) | 1997-06-24 | 1997-06-24 | Growth of polycrystalline silicon film and cvd apparatus |
GB9812887A GB2326648B (en) | 1997-06-24 | 1998-06-15 | Growth method of polycrystal silicon film |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9911077D0 true GB9911077D0 (en) | 1999-07-14 |
GB2335929A GB2335929A (en) | 1999-10-06 |
GB2335929B GB2335929B (en) | 2000-03-29 |
Family
ID=26313870
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9911077A Expired - Fee Related GB2335929B (en) | 1997-06-24 | 1998-06-15 | Apparatus for depositing a thin film on a substrate |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2335929B (en) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5060354A (en) * | 1990-07-02 | 1991-10-29 | George Chizinsky | Heated plate rapid thermal processor |
US5493987A (en) * | 1994-05-16 | 1996-02-27 | Ag Associates, Inc. | Chemical vapor deposition reactor and method |
US6352593B1 (en) * | 1997-08-11 | 2002-03-05 | Torrex Equipment Corp. | Mini-batch process chamber |
-
1998
- 1998-06-15 GB GB9911077A patent/GB2335929B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2335929B (en) | 2000-03-29 |
GB2335929A (en) | 1999-10-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20020615 |