GB9909042D0 - Semiconductor device and method of manufacture - Google Patents
Semiconductor device and method of manufactureInfo
- Publication number
- GB9909042D0 GB9909042D0 GBGB9909042.5A GB9909042A GB9909042D0 GB 9909042 D0 GB9909042 D0 GB 9909042D0 GB 9909042 A GB9909042 A GB 9909042A GB 9909042 D0 GB9909042 D0 GB 9909042D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- manufacture
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10109734A JP3107157B2 (en) | 1998-04-20 | 1998-04-20 | Semiconductor device and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9909042D0 true GB9909042D0 (en) | 1999-06-16 |
GB2336719A GB2336719A (en) | 1999-10-27 |
Family
ID=14517899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9909042A Withdrawn GB2336719A (en) | 1998-04-20 | 1999-04-20 | Sidewall insulating films for field effect transistors |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP3107157B2 (en) |
KR (1) | KR19990083320A (en) |
CN (1) | CN1233857A (en) |
GB (1) | GB2336719A (en) |
TW (1) | TW410372B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4215787B2 (en) | 2005-09-15 | 2009-01-28 | エルピーダメモリ株式会社 | Semiconductor integrated circuit device and manufacturing method thereof |
CN102201341B (en) * | 2010-03-22 | 2015-09-09 | 中芯国际集成电路制造(上海)有限公司 | Manufacture the method for nmos pass transistor |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW203148B (en) * | 1991-03-27 | 1993-04-01 | American Telephone & Telegraph | |
US5976939A (en) * | 1995-07-03 | 1999-11-02 | Intel Corporation | Low damage doping technique for self-aligned source and drain regions |
WO1997013273A1 (en) * | 1995-10-04 | 1997-04-10 | Intel Corporation | Formation of source/drain from doped glass |
KR970030891A (en) * | 1995-11-21 | 1997-06-26 | 윌리엄 이. 힐러 | Rapid thermal annealing in MOS technology |
-
1998
- 1998-04-20 JP JP10109734A patent/JP3107157B2/en not_active Expired - Fee Related
-
1999
- 1999-04-17 TW TW088106181A patent/TW410372B/en not_active IP Right Cessation
- 1999-04-19 KR KR1019990013891A patent/KR19990083320A/en not_active Application Discontinuation
- 1999-04-20 CN CN99106018A patent/CN1233857A/en active Pending
- 1999-04-20 GB GB9909042A patent/GB2336719A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
TW410372B (en) | 2000-11-01 |
KR19990083320A (en) | 1999-11-25 |
JP3107157B2 (en) | 2000-11-06 |
CN1233857A (en) | 1999-11-03 |
JPH11307759A (en) | 1999-11-05 |
GB2336719A (en) | 1999-10-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |