GB989749A - Improvements in or relating to magnetic circuits - Google Patents

Improvements in or relating to magnetic circuits

Info

Publication number
GB989749A
GB989749A GB2539462A GB2539462A GB989749A GB 989749 A GB989749 A GB 989749A GB 2539462 A GB2539462 A GB 2539462A GB 2539462 A GB2539462 A GB 2539462A GB 989749 A GB989749 A GB 989749A
Authority
GB
United Kingdom
Prior art keywords
cells
cell
information
transferred
pulse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2539462A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB989749A publication Critical patent/GB989749A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0816Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using a rotating or alternating coplanar magnetic field
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0841Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0875Organisation of a plurality of magnetic shift registers
    • G11C19/0883Means for switching magnetic domains from one path into another path, i.e. transfer switches, swap gates or decoders
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/80Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using non-linear magnetic devices; using non-linear dielectric devices
    • H03K17/82Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using non-linear magnetic devices; using non-linear dielectric devices the devices being transfluxors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/80Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using non-linear magnetic devices; using non-linear dielectric devices
    • H03K17/84Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using non-linear magnetic devices; using non-linear dielectric devices the devices being thin-film devices

Abstract

989,749. Circuits employing thin magnetic films. INTERNATIONAL BUSINESS MACHINES CORPORATION. July 3, 1962 [July 20, 1961], No. 25394/62. Heading H3B. A shift register comprising a chain of magnetic cells is adapted to invert information by introducing a domain wall between two cells intermediate its length. Shift register.-A shift register comprises a chain of anisotropic thin magnetic cells, consecutive cells being taken to contain the same information if no domain wall exists between them (see for example cells 50-54, Fig. 6a). If now the conductor associated with cell 53 is pulsed, with a current less than the nucleation current but greater than the critical current for domain movement, so as to set it to its opposite state, the domain wall 62 is transferred to the right-hand side of cell 53 and the information in cell 52 is transferred to cell 53. Thus, by pulsing each cell alternately with positive and negative pulses information may be transferred through the register. To prevent backward transfer the cell 54 following the one to which information is to be transferred must be in the same state as its predecessor 53. Thus, information must be passed through consecutive groups of at least three cells. Fig. 1 shows an embodiment having three pulsing conductors, whereas the embodiment of Fig. 6a uses only two conductors to transfer information through groups of four cells. The first pulse applied to a cell may be considered to be a resetting pulse and the second pulse a transfer pulse. Inverting shift register.-For applications in which it is necessary to invert information with respect to the reset directions so that mere change of convention may not be used (such as when the outputs of two similar circuits are combined in a gate) a pair of cells 54, 55 are provided, the second one being provided with a winding which allows it to be set to the " 0 " position so as to produce a domain wall between it and cell 54 whatever the state of cell 56. Owing to the change in convention of the state corresponding to binary information at the junction of the cells information is reversed on being fed through the register although all the cells are still reset to the " 0 " state. An added conductor is supplied to cell 54 as unless a resetting pulse is applied immediately after a transfer pulse the domain 61 may be transferred backwards through the register. Such a winding is not required for the embodiment of Fig. 1. Logical circuits.-Logical circuits employing inverting devices of the type described are described with reference to Figs. 9 to 11 (not shown). Cells having circular anisotropy or linear anisotropy may be used either separately or in combination (Fig. 8, not shown).
GB2539462A 1961-07-20 1962-07-03 Improvements in or relating to magnetic circuits Expired GB989749A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH852261A CH396982A (en) 1961-07-20 1961-07-20 Magnetic inversion circuit

Publications (1)

Publication Number Publication Date
GB989749A true GB989749A (en) 1965-04-22

Family

ID=4341508

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2539462A Expired GB989749A (en) 1961-07-20 1962-07-03 Improvements in or relating to magnetic circuits

Country Status (4)

Country Link
CH (1) CH396982A (en)
DE (1) DE1193093B (en)
GB (1) GB989749A (en)
SE (1) SE320694B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITVI20090026A1 (en) * 2009-02-12 2010-08-13 Ct De Investigacion Cooperativa En Asoc MANIPULATION OF MAGNETIC PARTICLES IN CIRCUITS FOR THE PROPAGATION OF MAGNETIC DOMAIN WALLS.

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL233342A (en) * 1957-11-18

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITVI20090026A1 (en) * 2009-02-12 2010-08-13 Ct De Investigacion Cooperativa En Asoc MANIPULATION OF MAGNETIC PARTICLES IN CIRCUITS FOR THE PROPAGATION OF MAGNETIC DOMAIN WALLS.
WO2010091874A1 (en) * 2009-02-12 2010-08-19 Asociación-Centro De Investigación Cooperativa En Nanociencias - Cic Nanogune Manipulation of magnetic particles in conduits for the propagation of domain walls
US8878638B2 (en) 2009-02-12 2014-11-04 Asociacion-Centro De Investigacion Cooperativa En Nanociencias-Cic Nanogune Manipulation of magnetic particles in conduits for the propagation of domain walls

Also Published As

Publication number Publication date
DE1193093B (en) 1965-05-20
SE320694B (en) 1970-02-16
CH396982A (en) 1965-08-15

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