GB985371A - Improvements in or relating to processes for the production of monocrystalline layers of semiconductor materials - Google Patents

Improvements in or relating to processes for the production of monocrystalline layers of semiconductor materials

Info

Publication number
GB985371A
GB985371A GB38913/63A GB3891363A GB985371A GB 985371 A GB985371 A GB 985371A GB 38913/63 A GB38913/63 A GB 38913/63A GB 3891363 A GB3891363 A GB 3891363A GB 985371 A GB985371 A GB 985371A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor material
partition
heating
heating chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB38913/63A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB985371A publication Critical patent/GB985371A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
GB38913/63A 1962-10-05 1963-10-03 Improvements in or relating to processes for the production of monocrystalline layers of semiconductor materials Expired GB985371A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES81907A DE1216851B (de) 1962-10-05 1962-10-05 Vorrichtung und Verfahren zum Betrieb der Vorrichtung zur Herstellung epitaktischer Aufwachsschichten auf gleichzeitig mehreren einkristallinen Scheiben aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
GB985371A true GB985371A (en) 1965-03-10

Family

ID=7509991

Family Applications (1)

Application Number Title Priority Date Filing Date
GB38913/63A Expired GB985371A (en) 1962-10-05 1963-10-03 Improvements in or relating to processes for the production of monocrystalline layers of semiconductor materials

Country Status (5)

Country Link
CH (1) CH442249A (https=)
DE (1) DE1216851B (https=)
FR (1) FR1372155A (https=)
GB (1) GB985371A (https=)
NL (1) NL298449A (https=)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99536C (https=) * 1951-03-07 1900-01-01

Also Published As

Publication number Publication date
NL298449A (https=)
FR1372155A (fr) 1964-09-11
DE1216851B (de) 1966-05-18
DE1216851C2 (https=) 1966-12-01
CH442249A (de) 1967-08-31

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