GB983292A - Improvements in and relating to semiconductor devices - Google Patents

Improvements in and relating to semiconductor devices

Info

Publication number
GB983292A
GB983292A GB614961A GB614961A GB983292A GB 983292 A GB983292 A GB 983292A GB 614961 A GB614961 A GB 614961A GB 614961 A GB614961 A GB 614961A GB 983292 A GB983292 A GB 983292A
Authority
GB
United Kingdom
Prior art keywords
boron
wafer
pellets
layer
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB614961A
Inventor
Julian Robert Anthony Beale
Henry Edward Brockman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Ltd
Original Assignee
Mullard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL274818D priority Critical patent/NL274818A/xx
Application filed by Mullard Ltd filed Critical Mullard Ltd
Priority to GB614961A priority patent/GB983292A/en
Priority to DE1962N0021216 priority patent/DE1232264B/en
Priority to FR888599A priority patent/FR1315520A/en
Publication of GB983292A publication Critical patent/GB983292A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/18—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions
    • C23C10/20—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions only one element being diffused
    • C23C10/22—Metal melt containing the element to be diffused
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

983,292. Semi-conductor devices. MULLARD Ltd. Feb. 20, 1961, No. 6149/61. Heading H1K. In making a semi-conductor device amounts of the same material are applied to two sites on a P layer on an N-type body (N layer on P body) and subsequently alloying is effected to form a further PN junction at the first site and an ohmic contact at the second. The junction is obtained by ensuring that the melt at the first site contains excess of donor (acceptor) to give a recrystallized N(P) zone, and that diffusion from the liquid solid interface is predominantly of acceptor (donor) atoms derived from the layer material to reinforce the P(N) layer beneath the zone. A sufficient amount of acceptor (donor) material is included in the melt at the second site to provide a P(N) recrystallized zone constituting the ohmic contact. In a typical case boron is diffused into a 2 ohm.cm. monocrystalline phosphorus doped N-type silicon wafer by passing nitrogen successively through a water-diethylene glycol mixture, over a boron source, and then past the wafer. The source and wafer are maintained at 1200‹ C. for 2 hours to give a P-type layer of suitable thickness. After removal of the layer from one face in a specified etch the other face is etched in a series of steps to the configuration shown in Fig. 3 with three stepped sections of different surface dopings. A similar surface doping distribution on a plane surface is obtainable by performing the boron diffusion in two steps in which different areas of the surface are oxide masked. Tin arsenic pellets 31, 32, 33 are applied and the wafer mounted in the Fig. 4 apparatus as shown. After evacuation, hydrogen, purified by diffusion through heated palladium tube 18 and then passed over arsenic source 30, is flowed past the heated wafer. The boron distribution in the parts of the surface dissolved in pellets 31, 32 during the process is preselected in relation to the amount of arsenic in the pellets and the relative segregation co-efficients of arsenic and boron so that the recrystallized zones 37, 38 (Fig. 5) are respectively P and N type. Zone 38 beneath pellet 33 is also N type. Due to the steep boron concentration gradient in the surface regions the concentration of boron at the liquid-solid interface is much greater on the liquid side and preferential inward diffusion of boron therefore takes place to extend the P zone as shown. After etching the surface between pellets 31, 32 is masked, the wafer etched to line R<SP>1</SP> and nickel wires 40a, 41a, 42a soldered to the pellet residues with lead-tin eutectic. In an alternative arrangement pellet 42 is disposed on the opposite face of the wafer. In another process an N-type body with a boron diffused layer is etched to the form shown in Fig. 8 and tin pellets fused to the surface. A suspension in toluene of equal parts by weight of boron and aluminium is applied to the surface of pellet 46 and the wafer replaced in the apparatus with the arsenic source and heated. Arsenic predominates in the zone recrystallizing under pellet 45 which is therefore N type but aluminium and boron are in excess in the zone below pellet 46 to make it P type. The acceptors diffuse preferentially from both liquid-solid interfaces to deepen the layer 44 beneath the pellets. Subsequently a resist layer is applied to the surface between the pellets and the wafer etched as in Fig. 6. Finally a gold-plated nickel tab is alloyed to the opposite face of the wafer and attached to the pellets as before. Specifications 852,904, 916,881 and 983,291 are referred to.
GB614961A 1961-02-20 1961-02-20 Improvements in and relating to semiconductor devices Expired GB983292A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
NL274818D NL274818A (en) 1961-02-20
GB614961A GB983292A (en) 1961-02-20 1961-02-20 Improvements in and relating to semiconductor devices
DE1962N0021216 DE1232264B (en) 1961-02-20 1962-02-16 Method for manufacturing a semiconductor component
FR888599A FR1315520A (en) 1961-02-20 1962-02-20 Semiconductor and its manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB614961A GB983292A (en) 1961-02-20 1961-02-20 Improvements in and relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB983292A true GB983292A (en) 1965-02-17

Family

ID=9809305

Family Applications (1)

Application Number Title Priority Date Filing Date
GB614961A Expired GB983292A (en) 1961-02-20 1961-02-20 Improvements in and relating to semiconductor devices

Country Status (3)

Country Link
DE (1) DE1232264B (en)
GB (1) GB983292A (en)
NL (1) NL274818A (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1036393B (en) * 1954-08-05 1958-08-14 Siemens Ag Process for the production of two p-n junctions in semiconductor bodies, e.g. B. area transistors
DE1040697B (en) * 1955-03-30 1958-10-09 Siemens Ag Method for doping semiconductor bodies
NL207910A (en) * 1955-06-20
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies
AT209954B (en) * 1958-01-14 1960-07-11 Philips Nv Process for manufacturing semiconductor electrode systems

Also Published As

Publication number Publication date
NL274818A (en)
DE1232264B (en) 1967-01-12

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