GB983291A - Improvements in and relating to semiconductor devices - Google Patents
Improvements in and relating to semiconductor devicesInfo
- Publication number
- GB983291A GB983291A GB614861A GB614861A GB983291A GB 983291 A GB983291 A GB 983291A GB 614861 A GB614861 A GB 614861A GB 614861 A GB614861 A GB 614861A GB 983291 A GB983291 A GB 983291A
- Authority
- GB
- United Kingdom
- Prior art keywords
- acceptor
- donor
- relating
- semiconductor devices
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000463 material Substances 0.000 abstract 5
- 239000000155 melt Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
Abstract
983,291. Semi-conductor devices. MULLARD Ltd. Feb. 20, 1961, No. 6148/61. Heading H1K. The subject-matter of this Specification is included in Specification 983,292 but the claims relate to a process of alloying to an N-type (P-type) part of a semi-conductor body in which the melt contains sufficient donor (acceptor) material to ensure that the recrystallized material is of the same conductivity type as the part. In this process there is a predominance of acceptor (donor) material introduced into the melt from outside the body while the majority of the donor (acceptor) atoms in the recrystallized material are derived from the body material. Specifications 852,904 and 916,881 also re referred to.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB614861A GB983291A (en) | 1961-02-20 | 1961-02-20 | Improvements in and relating to semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB614861A GB983291A (en) | 1961-02-20 | 1961-02-20 | Improvements in and relating to semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB983291A true GB983291A (en) | 1965-02-17 |
Family
ID=9809286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB614861A Expired GB983291A (en) | 1961-02-20 | 1961-02-20 | Improvements in and relating to semiconductor devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB983291A (en) |
-
1961
- 1961-02-20 GB GB614861A patent/GB983291A/en not_active Expired
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