GB9818214D0 - A Bi-polar PNP transistor and a method for forming the transistor in a semi-conductor substrate - Google Patents
A Bi-polar PNP transistor and a method for forming the transistor in a semi-conductor substrateInfo
- Publication number
- GB9818214D0 GB9818214D0 GBGB9818214.0A GB9818214A GB9818214D0 GB 9818214 D0 GB9818214 D0 GB 9818214D0 GB 9818214 A GB9818214 A GB 9818214A GB 9818214 D0 GB9818214 D0 GB 9818214D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistor
- semi
- forming
- conductor substrate
- pnp transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
- H01L29/1008—Base region of bipolar transistors of lateral transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IE970626A IE970626A1 (en) | 1997-08-26 | 1997-08-26 | A bi-polar PNP transistor and a method for forming the transistor in a semi-conductor substrate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB9818214D0 true GB9818214D0 (en) | 1998-10-14 |
| GB2328794A GB2328794A (en) | 1999-03-03 |
| GB2328794B GB2328794B (en) | 2002-08-28 |
Family
ID=11041572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9818214A Expired - Fee Related GB2328794B (en) | 1997-08-26 | 1998-08-20 | A Bi-polar PNP transistor and a method for forming the transistor in a semi-conductor substrate |
Country Status (2)
| Country | Link |
|---|---|
| GB (1) | GB2328794B (en) |
| IE (1) | IE970626A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE1051137A1 (en) | 2010-10-29 | 2012-04-30 | Fairchild Semiconductor | Process for manufacturing a silicon carbide bipolar transistor and silicon carbide bipolar transistor thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61295661A (en) * | 1985-06-25 | 1986-12-26 | Yokogawa Electric Corp | Lateral pnp transistor |
| DE4137101A1 (en) * | 1991-02-28 | 1992-09-03 | Daimler Benz Ag | LATERAL SEMICONDUCTOR COMPONENT |
-
1997
- 1997-08-26 IE IE970626A patent/IE970626A1/en not_active IP Right Cessation
-
1998
- 1998-08-20 GB GB9818214A patent/GB2328794B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| IE970626A1 (en) | 1999-03-10 |
| GB2328794A (en) | 1999-03-03 |
| GB2328794B (en) | 2002-08-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) |
Free format text: REGISTERED BETWEEN 20100624 AND 20100630 |
|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20170820 |