GB2328794B - A Bi-polar PNP transistor and a method for forming the transistor in a semi-conductor substrate - Google Patents

A Bi-polar PNP transistor and a method for forming the transistor in a semi-conductor substrate

Info

Publication number
GB2328794B
GB2328794B GB9818214A GB9818214A GB2328794B GB 2328794 B GB2328794 B GB 2328794B GB 9818214 A GB9818214 A GB 9818214A GB 9818214 A GB9818214 A GB 9818214A GB 2328794 B GB2328794 B GB 2328794B
Authority
GB
United Kingdom
Prior art keywords
transistor
semi
forming
conductor substrate
pnp transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9818214A
Other versions
GB9818214D0 (en
GB2328794A (en
Inventor
Denis Joseph Doyle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heenar Research Ltd
Original Assignee
Analog Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Analog Research and Development Ltd filed Critical Analog Research and Development Ltd
Publication of GB9818214D0 publication Critical patent/GB9818214D0/en
Publication of GB2328794A publication Critical patent/GB2328794A/en
Application granted granted Critical
Publication of GB2328794B publication Critical patent/GB2328794B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H01L29/1008—Base region of bipolar transistors of lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
GB9818214A 1997-08-26 1998-08-20 A Bi-polar PNP transistor and a method for forming the transistor in a semi-conductor substrate Expired - Fee Related GB2328794B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IE970626A IE970626A1 (en) 1997-08-26 1997-08-26 A bi-polar PNP transistor and a method for forming the transistor in a semi-conductor substrate

Publications (3)

Publication Number Publication Date
GB9818214D0 GB9818214D0 (en) 1998-10-14
GB2328794A GB2328794A (en) 1999-03-03
GB2328794B true GB2328794B (en) 2002-08-28

Family

ID=11041572

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9818214A Expired - Fee Related GB2328794B (en) 1997-08-26 1998-08-20 A Bi-polar PNP transistor and a method for forming the transistor in a semi-conductor substrate

Country Status (2)

Country Link
GB (1) GB2328794B (en)
IE (1) IE970626A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE1051137A1 (en) 2010-10-29 2012-04-30 Fairchild Semiconductor Process for manufacturing a silicon carbide bipolar transistor and silicon carbide bipolar transistor thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61295661A (en) * 1985-06-25 1986-12-26 Yokogawa Electric Corp Lateral pnp transistor
EP0501261A1 (en) * 1991-02-28 1992-09-02 Daimler-Benz Aktiengesellschaft Lateral bipolar transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61295661A (en) * 1985-06-25 1986-12-26 Yokogawa Electric Corp Lateral pnp transistor
EP0501261A1 (en) * 1991-02-28 1992-09-02 Daimler-Benz Aktiengesellschaft Lateral bipolar transistor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Patent Abstracts of Japan, Section E, Section No 509, Vol 11, Pg 161, 23/5/87 & JP 61 295 661 A *

Also Published As

Publication number Publication date
IE970626A1 (en) 1999-03-10
GB9818214D0 (en) 1998-10-14
GB2328794A (en) 1999-03-03

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20100624 AND 20100630

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20170820