GB9812653D0 - Method of fabricating nitride crystal,liquid phase growth method nitride crystal,nitride crystal powders,and vapor phase growth method - Google Patents

Method of fabricating nitride crystal,liquid phase growth method nitride crystal,nitride crystal powders,and vapor phase growth method

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Publication number
GB9812653D0
GB9812653D0 GBGB9812653.5A GB9812653A GB9812653D0 GB 9812653 D0 GB9812653 D0 GB 9812653D0 GB 9812653 A GB9812653 A GB 9812653A GB 9812653 D0 GB9812653 D0 GB 9812653D0
Authority
GB
United Kingdom
Prior art keywords
nitride crystal
phase growth
growth method
fabricating
powders
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9812653.5A
Other versions
GB2326160B (en
GB2326160A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP22162897A external-priority patent/JP3622440B2/en
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to GB9909959A priority Critical patent/GB2333521B/en
Priority to GB9909954A priority patent/GB2333520B/en
Publication of GB9812653D0 publication Critical patent/GB9812653D0/en
Publication of GB2326160A publication Critical patent/GB2326160A/en
Application granted granted Critical
Publication of GB2326160B publication Critical patent/GB2326160B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0632—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C01B21/0722—Preparation by direct nitridation of aluminium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB9812653A 1997-06-11 1998-06-11 Nitride crystal fabricating method Expired - Fee Related GB2326160B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9909959A GB2333521B (en) 1997-06-11 1998-06-11 Nitride crystal growth method
GB9909954A GB2333520B (en) 1997-06-11 1998-06-11 GaN crystal growth method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP15375597 1997-06-11
JP22162897A JP3622440B2 (en) 1997-08-18 1997-08-18 Method for growing nitride crystal and method for growing GaN crystal
JP29256197 1997-10-24

Publications (3)

Publication Number Publication Date
GB9812653D0 true GB9812653D0 (en) 1998-08-12
GB2326160A GB2326160A (en) 1998-12-16
GB2326160B GB2326160B (en) 1999-11-03

Family

ID=27320530

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB9812061.1A Pending GB9812061D0 (en) 1997-06-11 1998-06-04 Method of fabricating nitride crystal,liquid phase growth method,nitride crystal,nitride crystal powders,and vapor phase growth method
GB9812653A Expired - Fee Related GB2326160B (en) 1997-06-11 1998-06-11 Nitride crystal fabricating method

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GBGB9812061.1A Pending GB9812061D0 (en) 1997-06-11 1998-06-04 Method of fabricating nitride crystal,liquid phase growth method,nitride crystal,nitride crystal powders,and vapor phase growth method

Country Status (4)

Country Link
KR (4) KR100322374B1 (en)
DE (1) DE19826003A1 (en)
GB (2) GB9812061D0 (en)
TW (1) TW519551B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112899784A (en) * 2021-01-20 2021-06-04 中国科学院苏州纳米技术与纳米仿生研究所 Gallium nitride (11-22) single crystal substrate and method for producing same

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2796657B1 (en) * 1999-07-20 2001-10-26 Thomson Csf PROCESS FOR THE SYNTHESIS OF SOLID MONOCRYSTALLINE MATERIALS IN NITRIDES OF ELEMENTS OF COLUMN III OF THE TABLE OF THE PERIODIC CLASSIFICATION
PL207400B1 (en) 2001-06-06 2010-12-31 Ammono Społka Z Ograniczoną Odpowiedzialnością Method of and apparatus for obtaining voluminous, gallium containing, monocrystalline nitride
WO2002101120A2 (en) * 2001-06-06 2002-12-19 Ammono Sp. Zo.O Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
UA82180C2 (en) * 2001-10-26 2008-03-25 АММОНО Сп. с о. о Bulk mono-crystals of gallium nitride (variants) and basis for epitaxy growth process
TWI263387B (en) 2001-10-26 2006-10-01 Ammono Sp Zoo Light emitting device structure provided with nitride bulk mono-crystal layers
US7063741B2 (en) * 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
EP1514958B1 (en) 2002-05-17 2014-05-14 Ammono S.A. Apparatus for obtaining a bulk single crystal using supercritical ammonia
WO2003098757A1 (en) 2002-05-17 2003-11-27 Ammono Sp.Zo.O. Light emitting element structure having nitride bulk single crystal layer
US20060138431A1 (en) 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
CN100339512C (en) * 2002-06-26 2007-09-26 波兰商艾蒙诺公司 Improvemrnt of process for obtaining of bulk monocrystallline gallium-containing nitride
JP4824313B2 (en) * 2002-12-11 2011-11-30 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン Process for obtaining a gallium-containing nitride bulk single crystal, a process for eliminating impurities from the obtained crystal, and a process for producing a substrate comprising a gallium-containing nitride bulk single crystal
WO2004053210A1 (en) 2002-12-11 2004-06-24 Ammono Sp. Z O.O. A substrate for epitaxy and a method of preparing the same
EP1734158B1 (en) * 2004-03-31 2012-01-04 NGK Insulators, Ltd. Gallium nitride single crystal growing method
JP4714143B2 (en) * 2004-05-19 2011-06-29 住友電気工業株式会社 Group III nitride semiconductor crystal manufacturing method
WO2005121415A1 (en) 2004-06-11 2005-12-22 Ammono Sp. Z O.O. Bulk mono-crystalline gallium-containing nitride and its application
PL371405A1 (en) 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Method for manufacture of volumetric monocrystals by their growth on crystal nucleus
TW200706710A (en) 2005-05-12 2007-02-16 Ricoh Co Ltd Process for producing group iii element nitride crystal, apparatus for producing group iii element nitride crystal, and group iii element nitride crystal
JP2014520752A (en) * 2011-07-13 2014-08-25 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Growth of bulk group III nitride crystals
KR102271060B1 (en) * 2018-05-18 2021-06-29 연세대학교 산학협력단 Layered AlN, manufacturing method thereof and exfoliated AlN nanosheet therefrom

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2313976A1 (en) * 1975-06-13 1977-01-07 Labo Electronique Physique PROCESS FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALS AND SINGLE CRYSTALS OBTAINED BY IMPLEMENTING THIS PROCESS
GB2127709A (en) * 1982-10-06 1984-04-18 Univ Edinburgh Manufacture of aluminium nitride
JPH01145309A (en) * 1987-11-30 1989-06-07 Idemitsu Petrochem Co Ltd Production of metallic nitride and device therefor
JPH04124097A (en) * 1990-09-14 1992-04-24 Fujitsu Ltd Crystal growth process
JPH04154607A (en) * 1990-10-17 1992-05-27 Showa Alum Corp Method for producing aluminum nitride powder
JPH07277897A (en) * 1994-04-04 1995-10-24 Katsutoshi Yoneya Synthesis of aluminum nitride single crystal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112899784A (en) * 2021-01-20 2021-06-04 中国科学院苏州纳米技术与纳米仿生研究所 Gallium nitride (11-22) single crystal substrate and method for producing same
CN112899784B (en) * 2021-01-20 2022-06-17 中国科学院苏州纳米技术与纳米仿生研究所 Gallium nitride (11-22) single crystal substrate and method for producing same

Also Published As

Publication number Publication date
KR100419285B1 (en) 2004-02-19
DE19826003A1 (en) 1998-12-24
KR100322374B1 (en) 2002-05-09
GB2326160B (en) 1999-11-03
TW519551B (en) 2003-02-01
KR100384728B1 (en) 2003-05-23
KR100338360B1 (en) 2002-05-30
KR19990006823A (en) 1999-01-25
GB2326160A (en) 1998-12-16
GB9812061D0 (en) 1998-08-05

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PCNP Patent ceased through non-payment of renewal fee

Effective date: 20050611