GB9706081D0 - Self-aligned unlanded via metallization - Google Patents

Self-aligned unlanded via metallization

Info

Publication number
GB9706081D0
GB9706081D0 GBGB9706081.8A GB9706081A GB9706081D0 GB 9706081 D0 GB9706081 D0 GB 9706081D0 GB 9706081 A GB9706081 A GB 9706081A GB 9706081 D0 GB9706081 D0 GB 9706081D0
Authority
GB
United Kingdom
Prior art keywords
aligned
self
via metallization
unlanded via
unlanded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9706081.8A
Other versions
GB2323704A (en
GB2323704B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to GB9706081A priority Critical patent/GB2323704B/en
Priority to DE19716419A priority patent/DE19716419A1/en
Publication of GB9706081D0 publication Critical patent/GB9706081D0/en
Publication of GB2323704A publication Critical patent/GB2323704A/en
Application granted granted Critical
Publication of GB2323704B publication Critical patent/GB2323704B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
GB9706081A 1997-03-24 1997-03-24 Self-aligned unlanded via metallization Expired - Fee Related GB2323704B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9706081A GB2323704B (en) 1997-03-24 1997-03-24 Self-aligned unlanded via metallization
DE19716419A DE19716419A1 (en) 1997-03-24 1997-04-18 Formation of interconnects in semiconductor device between different level wiring lines

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9706081A GB2323704B (en) 1997-03-24 1997-03-24 Self-aligned unlanded via metallization
DE19716419A DE19716419A1 (en) 1997-03-24 1997-04-18 Formation of interconnects in semiconductor device between different level wiring lines

Publications (3)

Publication Number Publication Date
GB9706081D0 true GB9706081D0 (en) 1997-05-14
GB2323704A GB2323704A (en) 1998-09-30
GB2323704B GB2323704B (en) 2001-10-24

Family

ID=26035913

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9706081A Expired - Fee Related GB2323704B (en) 1997-03-24 1997-03-24 Self-aligned unlanded via metallization

Country Status (2)

Country Link
DE (1) DE19716419A1 (en)
GB (1) GB2323704B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10046012B4 (en) * 2000-09-18 2005-09-22 Infineon Technologies Ag Method for forming a contact hole in a semiconductor circuit arrangement
US6815818B2 (en) * 2001-11-19 2004-11-09 Micron Technology, Inc. Electrode structure for use in an integrated circuit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69217838T2 (en) * 1991-11-19 1997-08-21 Philips Electronics Nv Manufacturing method for a semiconductor device with aluminum traces insulated from one another laterally by an aluminum connection
US5321211A (en) * 1992-04-30 1994-06-14 Sgs-Thomson Microelectronics, Inc. Integrated circuit via structure

Also Published As

Publication number Publication date
DE19716419A1 (en) 1998-10-22
GB2323704A (en) 1998-09-30
GB2323704B (en) 2001-10-24

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20090324