GB966464A - Method of forming single crystal films - Google Patents

Method of forming single crystal films

Info

Publication number
GB966464A
GB966464A GB48560/62A GB4856062A GB966464A GB 966464 A GB966464 A GB 966464A GB 48560/62 A GB48560/62 A GB 48560/62A GB 4856062 A GB4856062 A GB 4856062A GB 966464 A GB966464 A GB 966464A
Authority
GB
United Kingdom
Prior art keywords
silicon
substrate
chloride
single crystal
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB48560/62A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GTE Sylvania Inc
Original Assignee
Sylvania Electric Products Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sylvania Electric Products Inc filed Critical Sylvania Electric Products Inc
Publication of GB966464A publication Critical patent/GB966464A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/152—Single crystal on amorphous substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Glass Compositions (AREA)
GB48560/62A 1961-12-26 1962-12-24 Method of forming single crystal films Expired GB966464A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US161992A US3139361A (en) 1961-12-26 1961-12-26 Method of forming single crystal films on a material in fluid form

Publications (1)

Publication Number Publication Date
GB966464A true GB966464A (en) 1964-08-12

Family

ID=22583707

Family Applications (1)

Application Number Title Priority Date Filing Date
GB48560/62A Expired GB966464A (en) 1961-12-26 1962-12-24 Method of forming single crystal films

Country Status (4)

Country Link
US (1) US3139361A (US06256357-20010703-M00001.png)
BE (1) BE626462A (US06256357-20010703-M00001.png)
GB (1) GB966464A (US06256357-20010703-M00001.png)
NL (1) NL286877A (US06256357-20010703-M00001.png)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053046A (US06256357-20010703-M00001.png) * 1963-02-25 1900-01-01
FR1370724A (fr) * 1963-07-15 1964-08-28 Electronique & Automatisme Sa Procédé de réalisation de couches minces monocristallines
US3372069A (en) * 1963-10-22 1968-03-05 Texas Instruments Inc Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor
US3335038A (en) * 1964-03-30 1967-08-08 Ibm Methods of producing single crystals on polycrystalline substrates and devices using same
US3337375A (en) * 1964-04-13 1967-08-22 Sprague Electric Co Semiconductor method and device
US3484662A (en) * 1965-01-15 1969-12-16 North American Rockwell Thin film transistor on an insulating substrate
US3645785A (en) * 1969-11-12 1972-02-29 Texas Instruments Inc Ohmic contact system
US3770565A (en) * 1972-01-05 1973-11-06 Us Navy Plastic mounting of epitaxially grown iv-vi compound semiconducting films
US3941647A (en) * 1973-03-08 1976-03-02 Siemens Aktiengesellschaft Method of producing epitaxially semiconductor layers
US4058418A (en) * 1974-04-01 1977-11-15 Solarex Corporation Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth
US3993533A (en) * 1975-04-09 1976-11-23 Carnegie-Mellon University Method for making semiconductors for solar cells
FR2407892A1 (fr) * 1977-11-04 1979-06-01 Rhone Poulenc Ind Procede de fabrication de silicium pour la conversion photovoltaique
US4323419A (en) * 1980-05-08 1982-04-06 Atlantic Richfield Company Method for ribbon solar cell fabrication
US4374163A (en) * 1981-09-29 1983-02-15 Westinghouse Electric Corp. Method of vapor deposition
AU2016295720B2 (en) * 2015-07-21 2021-09-02 Fluidsens International Inc. System and method for detection of particles in liquid or in air

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1141561A (fr) * 1956-01-20 1957-09-04 Cedel Procédé et moyens pour la fabrication de matériaux semi-conducteurs

Also Published As

Publication number Publication date
US3139361A (en) 1964-06-30
NL286877A (US06256357-20010703-M00001.png)
BE626462A (US06256357-20010703-M00001.png)

Similar Documents

Publication Publication Date Title
GB966464A (en) Method of forming single crystal films
Morosanu Thin films by chemical vapour deposition
US4421592A (en) Plasma enhanced deposition of semiconductors
KR850001943B1 (ko) 실리콘 결정체의 연속적 제조방법
US4123571A (en) Method for forming smooth self limiting and pin hole free SiC films on Si
JP2548949B2 (ja) 半導体製造用構成部材
KR850001944B1 (ko) 결정성 실리콘체의 연속적 제조방법
US3941647A (en) Method of producing epitaxially semiconductor layers
KR850001942B1 (ko) 반도체재료의 연속 제조방법
US3139363A (en) Method of making a silicon article by use of a removable core of tantalum
US3895976A (en) Processes for the localized and deep diffusion of gallium into silicon
US3748169A (en) Method and apparatus for the production of hollow members of any length of semiconductor material
GB1260233A (en) Improvements in or relating to the epitaxial deposition of crystalline material from the gas phase
US3226270A (en) Method of crucible-free production of gallium arsenide rods from alkyl galliums and arsenic compounds at low temperatures
Hall The thermal decomposition of germane
JPS5272399A (en) Method and apparatus for growth of single crystals of al2o3 from gas p hase
US3734817A (en) Treated quartz vessels for use in producing and further processing iii-v semiconductor bodies low in silicon
US4451391A (en) Conductive silicon carbide
JPS54157779A (en) Production of silicon single crystal
GB997336A (en) Improvements in or relating to apparatus for the preparation of rod-shaped members of semiconductor material of very high purity
GB1229128A (US06256357-20010703-M00001.png)
US3811963A (en) Method of epitaxially depositing gallium nitride from the liquid phase
JPH0688866B2 (ja) 窒化ホウ素被覆ルツボおよびその製造方法
US3345209A (en) Growth control of disproportionation process
EP0045191A1 (en) Process and apparatus for the production of semiconductor bodies