GB960893A - The production of semiconductor elements and the purification of wholly or partially halogenated hydrides of such elements - Google Patents
The production of semiconductor elements and the purification of wholly or partially halogenated hydrides of such elementsInfo
- Publication number
- GB960893A GB960893A GB2243761A GB2243761A GB960893A GB 960893 A GB960893 A GB 960893A GB 2243761 A GB2243761 A GB 2243761A GB 2243761 A GB2243761 A GB 2243761A GB 960893 A GB960893 A GB 960893A
- Authority
- GB
- United Kingdom
- Prior art keywords
- halogen compound
- ticl4
- semi
- carrier
- albr3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 8
- 150000004678 hydrides Chemical class 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000746 purification Methods 0.000 title 1
- 150000002366 halogen compounds Chemical class 0.000 abstract 14
- 229910003074 TiCl4 Inorganic materials 0.000 abstract 7
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 abstract 7
- PQLAYKMGZDUDLQ-UHFFFAOYSA-K aluminium bromide Chemical compound Br[Al](Br)Br PQLAYKMGZDUDLQ-UHFFFAOYSA-K 0.000 abstract 6
- 239000007788 liquid Substances 0.000 abstract 6
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 abstract 4
- 150000004820 halides Chemical class 0.000 abstract 4
- 229910003822 SiHCl3 Inorganic materials 0.000 abstract 3
- 239000007789 gas Substances 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract 2
- 150000004706 metal oxides Chemical class 0.000 abstract 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910019213 POCl3 Inorganic materials 0.000 abstract 1
- -1 SiCl4 Chemical class 0.000 abstract 1
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000010790 dilution Methods 0.000 abstract 1
- 239000012895 dilution Substances 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000007062 hydrolysis Effects 0.000 abstract 1
- 238000006460 hydrolysis reaction Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 150000002736 metal compounds Chemical class 0.000 abstract 1
- 229910001507 metal halide Inorganic materials 0.000 abstract 1
- 150000005309 metal halides Chemical class 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B41/00—Obtaining germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
Abstract
<PICT:0960893/C1/1> A semi-conductor element, e.g. Si, is made by decomposing thermally or by electric discharge a wholly or partially halogenated hydride of the semi-conductor element in the gaseous state by adding to the liquid halogen compound, e.g. SiCl4, SiHCl3, an hydrolysable halogen compound of Ti or Al which hydrolyses more readily than the halogen compound and is soluble therein, the Ti or Al halide is hydrolysed to the hydrated metal oxide together with optionally some of the halogen compound, the halogen compound is evaporated and the gas passed over a carrier of the element, and the halogen compound is decomposed thermally or by electric discharge to deposit the semi-conductor element on the surface of the carrier. The hydrolysable halogen compound of Ti or Al may be AlBr3, TiCl4, or AlCl3. The decompositio may be carried out at a temperature not more than 200 DEG C. above the m.p. of the Si. The liquid mixture, e.g. containing 10 mol. per cent TiCl4 or AlBr3, may be contacted, e.g. for 10 minutes, with a stream of moist inert gas and any solid matter formed, e.g. including AlBr3. POCl3, TiCl4. PCl3, TiCl4. SCl4 or Li AlBr4, separated, e.g. by decanting, and the liquid added at a dilution of 1 in 1000-10,000 to further liquid halogenide as a source of the metal compound. In an example a Si halide is purified by mixing with 10-2-10-1 mol. per cent TiCl4 or AlBr3, moist compressed air, N2 or H2 is passed through the liquid for 10 minutes through a porous disc of glass or quartz, the hydrated oxide is allowed to settle and the purified Si halide is separated, e.g. by decanting, and/or evaporated for use in the production of a semi-conductor. Apparatus of quartz or glass consists of reaction vessel 1 with carrier 2 between electrodes 3 and 31 of C coated with Si. A D.C. source 4 passes current through 2 via an adjustable resistor 5. SiHCl3 is fed to evaporation vessel 7 from storage 9. TiCl4 or AlBr3 is placed in 7, in constant temperature bath 7a, dissolved in the SiHCl3 and hydrolized by passing moist H2 via pipe 10 to perforated plate 11. Carrier 1 is heated and fed with dry H2, from part 12, which is also fed via pipe 8 to 7 and via pipe 6 to 1 where Si is deposited on 2. The deposition is interrupted to feed more Si HCl3 to 7 and hydrolysis is repeated by adding further metal halide and passing more moist H2 through pipe 10. An electric discharge may be used to deposit Si on the ends of the electrodes which are gradually drawn apart. The Si rods produced may be molten zone refined, four times, without a crucible and in a vacuum.ALSO:A semi-conductor element, e.g. Ge, is made by decomposing thermally or by electric discharge a wholly or partially halogenated hydride of the semi-conductor element in the gaseous state by adding to the liquid halogen compound, a hydrolysable halogen compound of Ti or Al which hydrolyses more readily than the halogen compound and is soluble therein, the Ti or Al halide is hydrolysed to the hydrated metal oxide together with optionally some of the halogen compound, the halogen compound is evaporated and the gas passed over a carrier of the element, and the halogen compound is decomposed thermally or by electric discharge to deposit the semi-conductor element on the surface of the carrier. The hydrolysable halogen compound of Ti or Al may be AlBr3, TiCl4 or AlCl3. The decompositio may be carried out at a temperature not more than 200 DEG C. above the melting point of the Ge.ALSO:A molten zone is passed four times in a vacuum and without a crucible through a rod of silicon having a specific resistance of 1,000 ohm.cm. to produce a product having a specific resistance of 2,000-4,000 ohm.cm. and a carrier life of 400-600 m sec.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES69024A DE1123301B (en) | 1960-06-21 | 1960-06-21 | Process for the production of the semiconducting elements silicon and germanium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB960893A true GB960893A (en) | 1964-06-17 |
Family
ID=7500672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2243761A Expired GB960893A (en) | 1960-06-21 | 1961-06-21 | The production of semiconductor elements and the purification of wholly or partially halogenated hydrides of such elements |
Country Status (3)
| Country | Link |
|---|---|
| CH (1) | CH414571A (en) |
| DE (1) | DE1123301B (en) |
| GB (1) | GB960893A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102134753A (en) * | 2010-12-14 | 2011-07-27 | 浙江宝利特新能源股份有限公司 | Automatic liquid-replenishing device for diffusion furnace in solar battery production |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4102764A (en) * | 1976-12-29 | 1978-07-25 | Westinghouse Electric Corp. | High purity silicon production by arc heater reduction of silicon intermediates |
-
1960
- 1960-06-21 DE DES69024A patent/DE1123301B/en active Granted
-
1961
- 1961-06-02 CH CH646961A patent/CH414571A/en unknown
- 1961-06-21 GB GB2243761A patent/GB960893A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102134753A (en) * | 2010-12-14 | 2011-07-27 | 浙江宝利特新能源股份有限公司 | Automatic liquid-replenishing device for diffusion furnace in solar battery production |
| CN102134753B (en) * | 2010-12-14 | 2012-10-03 | 浙江宝利特新能源股份有限公司 | Automatic liquid-replenishing device for diffusion furnace in solar battery production |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1123301B (en) | 1962-02-08 |
| DE1123301C2 (en) | 1962-08-30 |
| CH414571A (en) | 1966-06-15 |
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