GB9603028D0 - Glass and glass-ceramic compositions;glass and glass-ceramic substrates - Google Patents

Glass and glass-ceramic compositions;glass and glass-ceramic substrates

Info

Publication number
GB9603028D0
GB9603028D0 GBGB9603028.3A GB9603028A GB9603028D0 GB 9603028 D0 GB9603028 D0 GB 9603028D0 GB 9603028 A GB9603028 A GB 9603028A GB 9603028 D0 GB9603028 D0 GB 9603028D0
Authority
GB
United Kingdom
Prior art keywords
glass
ceramic
compositions
substrates
ceramic substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9603028.3A
Other versions
GB2310314A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Max Planck Institut fuer Festkoerperforschung
Alstom UK Ltd
Original Assignee
Max Planck Institut fuer Festkoerperforschung
GEC Alsthom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max Planck Institut fuer Festkoerperforschung, GEC Alsthom Ltd filed Critical Max Planck Institut fuer Festkoerperforschung
Priority to GB9603028A priority Critical patent/GB2310314A/en
Publication of GB9603028D0 publication Critical patent/GB9603028D0/en
Priority to PCT/GB1997/000248 priority patent/WO1997030001A1/en
Publication of GB2310314A publication Critical patent/GB2310314A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
GB9603028A 1996-02-14 1996-02-14 Glass or glass ceramic substrates Withdrawn GB2310314A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9603028A GB2310314A (en) 1996-02-14 1996-02-14 Glass or glass ceramic substrates
PCT/GB1997/000248 WO1997030001A1 (en) 1996-02-14 1997-01-29 Glass and glass-ceramic compositions; glass and glass-ceramic substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9603028A GB2310314A (en) 1996-02-14 1996-02-14 Glass or glass ceramic substrates

Publications (2)

Publication Number Publication Date
GB9603028D0 true GB9603028D0 (en) 1996-04-10
GB2310314A GB2310314A (en) 1997-08-20

Family

ID=10788688

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9603028A Withdrawn GB2310314A (en) 1996-02-14 1996-02-14 Glass or glass ceramic substrates

Country Status (2)

Country Link
GB (1) GB2310314A (en)
WO (1) WO1997030001A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19916296C1 (en) * 1999-04-12 2001-01-18 Schott Glas Alkali-free aluminoborosilicate glass and its use
DE19934072C2 (en) * 1999-07-23 2001-06-13 Schott Glas Alkali-free aluminoborosilicate glass, its uses and processes for its manufacture
DE19942259C1 (en) * 1999-09-04 2001-05-17 Schott Glas Alkaline earth aluminum borosilicate glass and its uses
EP1855324A1 (en) * 2006-05-12 2007-11-14 Applied Materials GmbH & Co. KG Substrate made of glass ceramic
US7867932B2 (en) 2007-08-28 2011-01-11 Corning Incorporated Refractory glass ceramics
WO2014004079A1 (en) 2012-06-29 2014-01-03 Corning Incorporated Glass-ceramic substrates for semiconductor processing

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4180618A (en) * 1977-07-27 1979-12-25 Corning Glass Works Thin silicon film electronic device
US4464475A (en) * 1983-01-13 1984-08-07 Corning Glass Works Glass-ceramic articles containing osumilite
GB2172282B (en) * 1985-03-11 1988-10-05 English Electric Co Ltd Toughened glass-ceramics
US4634684A (en) * 1985-10-23 1987-01-06 Corning Glass Works Strontium aluminosilicate glass substrates for flat panel display devices
US4634683A (en) * 1985-10-23 1987-01-06 Corning Glass Works Barium and/or strontium aluminosilicate crystal-containing glasses for flat panel display devices
JPS63107095A (en) * 1986-10-23 1988-05-12 富士通株式会社 Multilayer ceramic circuit board
US4714687A (en) * 1986-10-27 1987-12-22 Corning Glass Works Glass-ceramics suitable for dielectric substrates
DE3935471A1 (en) * 1989-10-25 1991-05-02 Hoechst Ag CERAMIC SUBSTANCE COMPOSITION AND ITS USE
JPH05116985A (en) * 1991-05-22 1993-05-14 Ngk Spark Plug Co Ltd Ceramic substrate
JPH05254923A (en) * 1992-03-10 1993-10-05 Hitachi Ltd Ceramic composition and ceramic circuit board

Also Published As

Publication number Publication date
WO1997030001A1 (en) 1997-08-21
GB2310314A (en) 1997-08-20

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)