GB2310314A - Glass or glass ceramic substrates - Google Patents
Glass or glass ceramic substrates Download PDFInfo
- Publication number
- GB2310314A GB2310314A GB9603028A GB9603028A GB2310314A GB 2310314 A GB2310314 A GB 2310314A GB 9603028 A GB9603028 A GB 9603028A GB 9603028 A GB9603028 A GB 9603028A GB 2310314 A GB2310314 A GB 2310314A
- Authority
- GB
- United Kingdom
- Prior art keywords
- glass
- component
- substrate
- oxide
- oxides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims description 44
- 239000002241 glass-ceramic Substances 0.000 title claims description 17
- 239000011521 glass Substances 0.000 claims description 52
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 23
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 20
- 239000006112 glass ceramic composition Substances 0.000 claims description 18
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 17
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 17
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 239000000395 magnesium oxide Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 11
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Inorganic materials [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 11
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 claims description 11
- 239000011787 zinc oxide Substances 0.000 claims description 10
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 claims description 9
- KOPBYBDAPCDYFK-UHFFFAOYSA-N Cs2O Inorganic materials [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 9
- 229910052682 stishovite Inorganic materials 0.000 claims description 9
- 229910052905 tridymite Inorganic materials 0.000 claims description 9
- 239000000292 calcium oxide Substances 0.000 claims description 8
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 8
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 8
- 229910000311 lanthanide oxide Inorganic materials 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- AKUNKIJLSDQFLS-UHFFFAOYSA-M dicesium;hydroxide Chemical compound [OH-].[Cs+].[Cs+] AKUNKIJLSDQFLS-UHFFFAOYSA-M 0.000 claims description 6
- -1 Awl203 Inorganic materials 0.000 claims description 5
- 239000000470 constituent Substances 0.000 claims description 5
- 239000011147 inorganic material Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000004377 microelectronic Methods 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 4
- 239000012707 chemical precursor Substances 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 3
- 229910000413 arsenic oxide Inorganic materials 0.000 claims description 3
- 229960002594 arsenic trioxide Drugs 0.000 claims description 3
- 229910001942 caesium oxide Inorganic materials 0.000 claims description 3
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000156 glass melt Substances 0.000 claims description 3
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000002667 nucleating agent Substances 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000010304 firing Methods 0.000 claims description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 238000001311 chemical methods and process Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 14
- 239000010409 thin film Substances 0.000 description 11
- 238000004140 cleaning Methods 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000005357 flat glass Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 239000005297 pyrex Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910018404 Al2 O3 Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000006124 Pilkington process Methods 0.000 description 2
- MJBPUQUGJNAPAZ-AWEZNQCLSA-N butin Chemical compound C1([C@@H]2CC(=O)C3=CC=C(C=C3O2)O)=CC=C(O)C(O)=C1 MJBPUQUGJNAPAZ-AWEZNQCLSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- MJBPUQUGJNAPAZ-UHFFFAOYSA-N Butine Natural products O1C2=CC(O)=CC=C2C(=O)CC1C1=CC=C(O)C(O)=C1 MJBPUQUGJNAPAZ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- KTTMEOWBIWLMSE-UHFFFAOYSA-N diarsenic trioxide Chemical compound O1[As](O2)O[As]3O[As]1O[As]2O3 KTTMEOWBIWLMSE-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000007735 ion beam assisted deposition Methods 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Dispersion Chemistry (AREA)
- Glass Compositions (AREA)
Description
Glass and Glass-ceramic compositions: Glass and Glass ceramic substrates
This invention relates to glass compositions and glass-ceramic compositions and their use as substrates.
Glass and Glass-ceramics have been used for many years as electrical and electronic substrates.
The properties of these materials in these applications which make them attractive are their coefficients of thermal expansion and their thermal stability. Alumino or Borosilicate glasses are currently used as substrates for silicon in devices such as solar cells and thin film transistors for displays, due to their matched thermal expansion and stability up to about 600 C and relatively low cost. The performance of such devices is limited by the maximum processing temperature at which the device can be produced, and this also affects the cost. An increase in the refractoriness (i.e. thermal stability) of the substrate would enable higher temperature processing with concomitant device performance enhancement and/or cost reduction.
Silicon is currently used as a substrate for silicon in microelectronic applications, e.g. silicon on insulator (501). The use of a lower cost material in place of silicon would offer significant cost reduction.
An object of the present invention is to provide a refractory glass or glass-ceramic composition able to withstand high temperature processing and capable of being used as a substrate, which gives improved performance at lower cost. High temperature in this context refers to temperatures of 700do and above.
Embodiments of the invention will be described which involve the selection of particular oxides which are mixed and heated to form a glass melt. Alternatively, chemical precursors to glass (e.g. sol-gel) are combined and reacted. The selected constituents and processing ensure a final substrate material which is either a glass or glass-ceramic with a coefficient of thermal expansion in the range 1-12 x 104/K.
The material may be used as a substrate for silicon for thin film solar cells (manufactured e.g.
by deposition techniques such as chemical vapour deposition, solution growth, ion beam or ion beam assisted deposition, molecular or cluster beam deposition or sputter deposition assisted techniques) and the technology of thin film transistors in displays. In addition, the material may be used as a substrate or support for crystalline silicon in microelectronic or micromechanic applications, e.g. Silicon on Insulator (SOI) or bonding of silicon wafers.
Fine adjustment of the thermal expansion coefficient of the glass or glass-ceramic allows also use for other semiconductor materials such as germanium, silicon-germanium, gallium arsenide, silicon carbide, diamond, copper-indium-diselinide, gallium nitride, etc, and other inorganic or semi-conducting materials as appropriate.
From one aspect, the invention provides a glass or glass-ceramic composition wherein the composition has thermal stability (as hereinbefore defined) up to at least 70( C.
From a further aspect, the invention provides a glass or glass-ceramic composition adapted to be used as a substrate for an inorganic material wherein the coefficient of thermal expansion of the composition is substantially the same as that of the inorganic material.
From a still further aspect, the invention provides a glass or glass-ceramic composition adapted to be used as a substrate for a semi-conducting material wherein the coefficient of thermal expansion of the composition is substantially the same as that of the semi-conducting material.
'Thermal stability' in the context refers to the ability of the composition to withstand processing without a significant degree of change in its surface characterisation as manifested by surface crystallisation, and its bulk characteristics. 'Substantially the same' refers to the coefficients of thermal expansion being sufficiently close so that the material applied to the substrate maintains its physical integrity eg it will not crack or peel.
Thus the substrate will have a similar coefficient of thermal expansion as that of the materials applied thereto eg silicon, germanium, silicon-germanium, gallium arsenide, silicon carbide, diamond, copper-indium-diselenide, gallium nitride, etc (i.e. in the range 1-12 x 106 /K).
The substrate may be either transparent, translucent or opaque.
The substrate material is normally made from oxides or chemical precursors to glasses or glass ceramics including at least a selection of: Si, , As203, BaO, Cs2O, CaO, CeO2, MgO, P2O5, SrO, TiO2, ZnO, ZrO2 and lanthanide oxides.
The substrate may be produced via a glass melting route eg wherein a selection of given oxides are mixed and heated to a form of glass melt or via chemical routes (e.g. sol-gel).
The glass or glass-ceramic may be made from SiO, Al203 nucleating agents comprising one or more of P2O5, TiO2 and ZrO2 and other oxides including one or more of As2O3, BaO, CaO, Cs2O
CeO2, MgO, SrO, ZnO and lanthanide oxides.
For example, such a material may comprise a glass or glass-ceramic made from silica 50.0 wt% to 75.0 wt%; aluminium oxide 9.0 wt% to 40.0 wt%; arsenic oxide 0.1 wt% to 15.0 wt%; barium oxide 0.1 wt% to 45.0 wt%; calcium oxide 0.1 wt% to 25.0 wt%; caesium oxide 0.1 wt% to 45.0 wt%; cerium dioxide 0.1 wt% to 15.0 wt%; magnesium oxide 0.1 wt% to 25.0 wt%; phosphorous pentoxide 0.1 wt% to 15.0 wt%; strontium oxide 0.1 wt% to 25.0 wt%; titanium dioxide 0.1 wt% to 15.0 wt%; zinc oxide 0.1 wt% to 15.0 wt%; zirconium dioxide 0.1 wt% to 15.0 wt%, and lanthanide oxides 0.1 wt% to 15.0 wt% and other oxides to a total of 100 wt%.
Glass and glass-ceramic compositions within the scope of the invention may optionally comprise other constituents such as firing agents, colourants or other additives, used in minor proportions to modify melting characteristics, appearance and/or other glass properties.
The substrate may be formed to be flat, concave or convex and may be structured eg formed with intersecting grooves, or dimples.
The substrate may be used directly or with a passivation layer coating (e.g. SiO2, SPINY Al2 O3 or AIN) or a combination of suitable passivation layers; such passivation layer(s) may act for preventing the glass from crystallising and/or protecting the film from diffusion of impurities from the glass.
The substrate (with or without a passivation layer) may be coated with or bonded to a semiconducting film consisting of silicon, germanium, silicon-germanium, gallium arsenide, silicon carbide, diamond, copper-indium-diselenide, gallium nitride, or other inorganic/semiconducting materials. The semi-conducting material may be organic or inorganic.
Further, the semiconductor film may be fabricated into solar cells, thin film transistors, silicon
on insulator structures, micromechanical devices, light emitting diodes, semiconductor lasers
or optoelectronic devices or other solid state devices or circuits.
Still further, the substrate may be used as a mechanical support for the handling or processing
of crystalline silicon or other semiconductors.
Embodiments of the invention are now given by way of example only.
Examples
1. In a first embodiment glass composed of all or a part of the components SiO2 , Al2 O3
BaO, MgO, ZnO, ZrO2, Cs2O is melted and cast to yield blocks for subsequent
machining to desired substrate shape. Thin films of silicon or other semiconductors are
deposited and /or subsequently treated in the temperature range of 700 - 1450 C to yield
solar cells, thin film transistors, micromechanical, optoelectronic or other solid state
devices or circuits.
2. Table 1 give a series of ten glass compositions in accordance with the invention. The
constituents are melted at 16500C - 1800 C and annealed at e.g. 800 C for 1 h - 2 h.
Subsequent treatment is as in Example 1.
Constituent | Identifier Code NK2/(4290 etc...) 429O 4292 4293 4294 4297 4298 4300 4301 4302 4303 SlO2 55.0 63.6 58.0 60.0 64.0 53.0 68.0 65.3 64.6 64.2 Al2O3 30.0 17.3 15.8 14.0 20.0 32.0 22.0 20.5 20.3 20.8 BaO 10.0 4.5 8.0 26.0 3.4 3.7 7.0 MgO 16.0 15.0 10.0 6.6 8.0 7.9 ZnO 5.5 | 10.0 ZrO2 5.0 9.1 8.3 Cs2O - - - - - - 4.2 3.4 Table 1: Weight percentage composition of example glasses
and glass-ceramlcs.
Table 2 below illustrates the results of thermal stability trials with some of the glass compositions as set out in Table 1 such compositions being identified as NK2/(4297, 4298 43004303)
Temperature/Time of Hold 900 C 950 C 1000 C 1050 C 1100 C Glass No.
4hr 16hr 4hr 16hr 4hr 16hr 4hr 16hr 4hr 16hr NK2(4297 B B C C C D D D D D NK2/4298 A B C D D D D D D D NK2/4300 A A B C C D D D D D NK2/4301 A A A A A B B B B B NK2/4302 A A A A A B B B B B NK2/4303 A A A A A A A B B B KEY
A B C D No surface crystallisation visible.
Very limited amount of surface crystallisation.
Very significant degree of surface crystallisation.
Severe surface crystallisation.
Table 2: Thermal stability trials on example glasses and glass-ceramics
As indicated above 'thermal stability' refers to the ability of the composition to withstand processing without any or without a significant degree of change in its surface characteristics as manifested by surface crystallisation, and its bulk characteristics.
The table, Table 3, below illustrates the thermal behaviour of the glasses designated 4297, 4298 4300-4303 in accordance with the invention, in comparison with known glasses. (Pyrex is a registered trade mark).
Material Linear thermal expansion coefficient Transformation Softening α x 10-6 (25 - T C) temperature temperature 200 400 600 800 1000 TT TS Polycrystalline 3.13 3.55 3.79 3.82 3 7 Silicon Fused Quartz 1.29 1.11 L03 0.79 0.61 Pyrex Glass 4.10 3.87 3.94 - - 551 602 Schott 3.94 3.73 3.96 - - 556 612 float lass 4297 4.49 451 4S8 452 = 794 847 4298 4.13 4.61 4.80 4.65 = 820 850 4300 112 3.37 3.52 340 = 826 870 4301 33S 3.58 3.72 3.65 - 833 896 4302 350 3.74 3.88 3.72 = 837 879 4303 ~ 3.29 3.66 3.85 ~ 3.86 - 822 874 Table 3: Thermal expansion of polycrystalline silicon, fused quartz,
Pyrex glass, Schott float glass and example glasses and glass-ceramics.
The accompanying Figure 1 illustrates the percentage linear change in dimensions of the glasses
NK2/4300-4303 versus temperature in comparison with silicon.
3. A glass composition is prepared as per any one of the examples in Table 1 butin addition
amorphous silicon is deposited e.g. by low pressure chemical vapour deposition or
plasma enhanced chemical vapour deposition at temperatures below 600 C and
subsequently crystallized by a furnace anneal at temperatures around 600 C for periods
of 2 to 48 h, by rapid thermal annealing at temperatures in the range of approx. 750 1300 C for fractions of seconds to several minutes or a combination of both or by laser
annealing or zone melt crystallisation processes using a variety of heat sources.
4. Glass is prepared as per Example 1 or 2 above but in addition silicon is deposited at
temperatures around 1000"C by chemical vapour deposition using a trichlorosilane
process.
5. As per Example 3 except that the polycrystalline Si layer created in Example 3 is further
thickened by a silicon - liquid phase epitaxy process from various metal solutions (e.g.
In, Sn Bi, Ga) at temperatures around 900"C, or a vapour phase epitaxy process from
trichlorosilane at temperatures around 1000 C.
6. As Example 5, except that the silicon film is fabricated into a solar cell using standard
microelectronic cleaning techniques (e.g. RCA cleaning sequence with or without HF
etching or other standard cleaning procedures used in microelectronic device fabrication
like cleaning solutions using organic cleaning ingredients), solid state or other means
of dopant diffusion at temperatures around 850"C and an optional thermal Si surface
oxidation at temperatures around 1100 C. The RCA cleaning sequence consists of two
cleaning steps: first a mixture of ammonia, hydrogen peroxide and water, heated to about 70-80"C and applied for approximately 10 - 15 min followed by a water rinse and a
mixture of hydrochloric acid, hydrogen peroxide and water, again at the same
temperature and time. Alternatively, a mixture of sulphuric acid and hydrogen peroxide
is used. There are a lot of varieties like boiling in HCI or HNq or dipping in HF or
combinations. On the other hand, organic cleaning solvents like 'Mucasol' (RTM) may
be utilised.
7. As Example 3, except that the silicon film is fabricated into thin film transistor devices
or circuits using standard cleaning techniques, solid state diffusion or other means of
dopant incorporation (e.g. ion implantation) and other electronic device production
sequences.
8. As in any previous example except that sheet glass is either drawn or cast from the melt.
The glass may be polished if necessary - this will not always be essential.
9. As in any previous example except that sheet glass is formed by the float method.
10. As Examples 8 or 9 where the sheet glass is mechanically structured on either one or
both faces.
11. A glass composed of silica 64 wt%, aluminium oxide 21 wt%, barium oxide 7 wt%, and
magnesium oxide 8 wt% and processed as in any previous example.
12. As Example 11 except that sheet glass is either drawn or cast from the melt.
13. As Example 11 except that sheet glass is formed by the float method.
14. As in Example 12 or 13 where the glass is mechanically structured on either one or both
faces.
15. As in any of the previous Examples except that the glass is heat-treated in the range 600 1500"C to develop a polycrystalline microstructure (i.e. formation of a glass-ceramic).
16. As in any previous example except that thin film transistors, solar cell materials or
semiconductor lasers or light emitting diodes or other solid state devices or circuits are
deposited on the substrate material.
17. As in any of examples 1 - 16 except that the glass or glass-ceramic is combined with a
silicon superstrate for subsequent production of a silicon on insulator device or solar cell
or micromechanical or optoelectronic devices or circuits.
18. As in any previous example except that the substrate is treated with a surface passivation layer (e.g. SiO2).
19. As in any previous example except the glass or glass-ceramic is used as a mechanical
support for the handling and processing of crystalline silicon.
20. As in any of examples 1 - 18 except the glass or glass-ceramic sheet is bonded to
crystalline silicon, 21. A glass composed of SiO2, Awl203, BaO and MgO is prepared from chemical precursors
(e.g. sol-gel). Thin sheets are cast onto a suitable substrate and heat-treated at
temperatures up to 1500"C. Silicon is deposited in the temperature range 700 - 1450"C to yield thin films for solar cells or other solid state devices such as thin film transistors
or micromechanical devices.
22. As example 21 except that thin sheets are prepared by extrusion.
23. As in either of examples 21 or 22 except that the glass is heat-treated in the range 600 1500"C to develop a polycrystalline microstructure.
24. As in any of examples 21 - 23 except thin film transistors, solar cells, micromechanical
devices or other solid state devices are fabricated on the substrate.
25. As in any of examples 21 - 24 except the glass or glass-ceramic is combined with a
silicon superstrate for subsequent production of silicon on insulator or micromechanical
devices.
26. As in any of examples 21 - 25 except that the substrate is treated with a surface
passivation layer (e.g. SiO2, SjxNy, AIN, A1203).
Claims (1)
- Claims1. A component comprising a substrate having a material applied thereto either directly or with at least one intermediate layer between the substrate and the material, said substrate being formed of a glass or glass-ceramic composition having a thermal stability (as hereinbefore defined) up to at least 7000C and having a coefficient of thermal expansion which is substantially the same (as hereinbefore defined) as that of the material.2. A component as claimed in Claim 1 wherein the glass or glass-ceramic composition is transparent or translucent or opaque.3. A component as claimed in Claim 1 or Claim 2 wherein the glass or glass-ceramic composition is made from oxides or chemical precursors to glasses or glass-ceramics including at least two of the following:-SiO2, Awl203, As2O3, BaO, Cs2O, CaO, CeO2, MgO, P2Os, SrO, TiO2, ZnO, ZrO2, lanthanide oxides.4. A component as claimed in any preceding claim, said substrate being produced via a glass melting route, wherein a selection of given oxides is mixed and heated to a form of glass melt.5. A component as claimed in any one of Claims 1 - 3, said substrate being made using a chemical process eg sol-gel.6. A component as claimed in any one of Claims 1 - 5, said substrate comprising at least 50 wt% SiO2 and at least 9 wt% A1203 7. A component as claimed in any one of claims 1 - 5 said substrate being made from SiO2, Awl203, nucleating agents comprising one or more of P2O5, TiO2 and ZrO2, and other oxides including one or more of As2O3, BaO, CaO, Cs2O, CeO2, MgO, SrO, ZnO, lanthanide oxides.8. A component as claimed in any one of Claims 1 - 5, said substrate being made from silica 50.0 wt% to 75.0 wt% and aluminium oxide 9.0 wt% to 40.0 wt% and also including one or more of the following in the wt% as specified:- arsenic oxide 0.1 wt% to 15.0 wt%; barium oxide 0.1 wt% to 45.0 wt%; calcium oxide 0.1 wt% to 25.0 wt%; caesium oxide 0.1 wt% to 45.0 wt%; cerium dioxide 0.1 wt% to 15.0 wt%; magnesium oxide 0.1 wt% to 25.0 wt%; phosphorous pentoxide 0.1 wt% to 15.0 wt%; strontium oxide 0.1 wt% to 25.0 wt%; titanium dioxide 0.1 wt% to 15.0 wt%; zinc oxide 0.1 wt% to 15.0 wt%; zirconium dioxide 0.1 wt% to 15.0 wt%; lanthanide oxides 0.1 wt% to 15.0 wt%; other oxides.9. A component as claimed in any preceding claim wherein said substrate comprises constituents such as firing agents, colourants or other additives, used in minor proportions to modify melting characteristics, appearance and/or other glass properties.10. A component as claimed in any proceding claim wherein the material is an inorganic material.11. A component as claimed in any proceding claim wherein the material is a semi conducting material.12. A component as claimed in any preceding claim, said material being silicon.13. A component as claimed in any proceding claim wherein the material is applied as a film to the substrate.14. A component as claimed in any preceding claim, being a micro-electronic component.15. A component as claimed in any preceding claim wherein the substrate has a passivation layer coating.16. A component as claimed in any preceding claim wherein the substrate has a plurality of passivation layers applied thereto.17. A component as claimed in either of Claims 15 or 16 wherein the or each passivation layer comprises SiO2 and/or Sixty and/or A1203 and/or AIN.18. A component as claimed in any one of claims 15 - 17 wherein the substrate is coated with or bonded to a semiconducting film comprising silicon or germanium or silicon germanium or gallium arsenide or silicon carbide or diamond or copper-indium diselenide or gallium nitride.19. A method of manufacturing a component comprising a substrate having a material applied thereto either directly or with at least one intermediate layer between the substrate and the material, said method comprising forming the substrate of a glass or glass-ceramic composition having a thermal stability (as hereinbefore defined) up to at least 7000C and having a coefficient of thermal expansion which is substantially the same (as hereinbefore defined) as that of said material.20. A glass or glass-ceramic composition having thermal stability up to at least 7000 C and comprising at least 50 wt% SiO2and at least 9 wt% Al2O 3.21. A glass or glass-ceramic composition as claimed in Claim 20 which additionally comprises at least 0.1 wt% BaO and/or at least 0.1 wt% Cos 20.22. Glass or glass-ceramic composition as claimed in Claim 20 being formed of SiO 2 Alp03, nucleating agents comprising one or more of P2O5, TiO2 and ZrO2 and other oxides including one or more of As2O3, BaO, CaO, Cs2 O , CeO2, MgO, SrO, ZnO and lanthanide oxides.23. A glass or glass-ceramic composition as claimed in Claim 20 being made from silica50.0 wt% to 75.0 wt% and aluminium oxide 9.0 wt% to 40.0 wt% and also including one or more of the following in the wt% as specified:- arsenic oxide 0.1 wt% to 15.0 wt%; barium oxide 0.1 wt% to 45.0 wt%; calcium oxide 0.1 wt% to 25.0 wt%; caesium oxide 0.1 wt% to 45.0 wt%; cerium dioxide 0.1 wt% to 15.0 wt%; magnesium oxide 0.1 wt% to 25.0 wt%; phosphorous pentoxide 0.1 wt% to 15.0 wt%; strontium oxide 0.1 wt% to25.0 wt%; titanium dioxide 0.1 wt% to 15.0 wt%; zinc oxide 0.1 wt% to 15.0 wt%; zirconium dioxide 0.1 wt% to 15.0 wt%; lanthanide oxides 0.1 wt% to 15.0 wt%; other oxides.24. A glass or glass-ceramic composition substantially as herein before described with reference to any of examples 1 - 26.25. A component substantially as herein before described with reference to any of examples - 26.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9603028A GB2310314A (en) | 1996-02-14 | 1996-02-14 | Glass or glass ceramic substrates |
PCT/GB1997/000248 WO1997030001A1 (en) | 1996-02-14 | 1997-01-29 | Glass and glass-ceramic compositions; glass and glass-ceramic substrates |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9603028A GB2310314A (en) | 1996-02-14 | 1996-02-14 | Glass or glass ceramic substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9603028D0 GB9603028D0 (en) | 1996-04-10 |
GB2310314A true GB2310314A (en) | 1997-08-20 |
Family
ID=10788688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9603028A Withdrawn GB2310314A (en) | 1996-02-14 | 1996-02-14 | Glass or glass ceramic substrates |
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Country | Link |
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GB (1) | GB2310314A (en) |
WO (1) | WO1997030001A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1855324A1 (en) * | 2006-05-12 | 2007-11-14 | Applied Materials GmbH & Co. KG | Substrate made of glass ceramic |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19916296C1 (en) * | 1999-04-12 | 2001-01-18 | Schott Glas | Alkali-free aluminoborosilicate glass and its use |
DE19934072C2 (en) * | 1999-07-23 | 2001-06-13 | Schott Glas | Alkali-free aluminoborosilicate glass, its uses and processes for its manufacture |
DE19942259C1 (en) * | 1999-09-04 | 2001-05-17 | Schott Glas | Alkaline earth aluminum borosilicate glass and its uses |
US7867932B2 (en) | 2007-08-28 | 2011-01-11 | Corning Incorporated | Refractory glass ceramics |
JP2015528783A (en) | 2012-06-29 | 2015-10-01 | コーニング インコーポレイテッド | Glass-ceramic substrates for semiconductor processes. |
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---|---|---|---|---|
GB2172282A (en) * | 1985-03-11 | 1986-09-17 | English Electric Co Ltd | Toughened glass-ceramics |
EP0265340A2 (en) * | 1986-10-23 | 1988-04-27 | Fujitsu Limited | Multilayer ceramic copper circuit board |
US5145540A (en) * | 1989-10-25 | 1992-09-08 | Hoechst Aktiengesellschaft | Ceramic composition of matter and its use |
US5342674A (en) * | 1992-03-10 | 1994-08-30 | Hitachi, Ltd. | Ceramic composition and ceramic circuit board |
US5362551A (en) * | 1991-05-22 | 1994-11-08 | Ngk Spark Plug Co., Ltd. | Ceramic substrate |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4180618A (en) * | 1977-07-27 | 1979-12-25 | Corning Glass Works | Thin silicon film electronic device |
US4464475A (en) * | 1983-01-13 | 1984-08-07 | Corning Glass Works | Glass-ceramic articles containing osumilite |
US4634683A (en) * | 1985-10-23 | 1987-01-06 | Corning Glass Works | Barium and/or strontium aluminosilicate crystal-containing glasses for flat panel display devices |
US4634684A (en) * | 1985-10-23 | 1987-01-06 | Corning Glass Works | Strontium aluminosilicate glass substrates for flat panel display devices |
US4714687A (en) * | 1986-10-27 | 1987-12-22 | Corning Glass Works | Glass-ceramics suitable for dielectric substrates |
-
1996
- 1996-02-14 GB GB9603028A patent/GB2310314A/en not_active Withdrawn
-
1997
- 1997-01-29 WO PCT/GB1997/000248 patent/WO1997030001A1/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2172282A (en) * | 1985-03-11 | 1986-09-17 | English Electric Co Ltd | Toughened glass-ceramics |
EP0265340A2 (en) * | 1986-10-23 | 1988-04-27 | Fujitsu Limited | Multilayer ceramic copper circuit board |
US5145540A (en) * | 1989-10-25 | 1992-09-08 | Hoechst Aktiengesellschaft | Ceramic composition of matter and its use |
US5362551A (en) * | 1991-05-22 | 1994-11-08 | Ngk Spark Plug Co., Ltd. | Ceramic substrate |
US5342674A (en) * | 1992-03-10 | 1994-08-30 | Hitachi, Ltd. | Ceramic composition and ceramic circuit board |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1855324A1 (en) * | 2006-05-12 | 2007-11-14 | Applied Materials GmbH & Co. KG | Substrate made of glass ceramic |
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Publication number | Publication date |
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WO1997030001A1 (en) | 1997-08-21 |
GB9603028D0 (en) | 1996-04-10 |
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