GB957170A - Methods of preparing junctions in semi-conductors and semi-conductor devices obtained by these methods - Google Patents
Methods of preparing junctions in semi-conductors and semi-conductor devices obtained by these methodsInfo
- Publication number
- GB957170A GB957170A GB4220659A GB4220659A GB957170A GB 957170 A GB957170 A GB 957170A GB 4220659 A GB4220659 A GB 4220659A GB 4220659 A GB4220659 A GB 4220659A GB 957170 A GB957170 A GB 957170A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- conductor
- impurity
- type
- bodies
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 13
- 239000012535 impurity Substances 0.000 abstract 9
- 238000010438 heat treatment Methods 0.000 abstract 7
- 239000000463 material Substances 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000004927 fusion Effects 0.000 abstract 2
- 238000003466 welding Methods 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 238000010009 beating Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 230000007935 neutral effect Effects 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Abstract
957,170. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. Dec. 11, 1959 [Dec. 18, 1958], No. 42206/59. Drawings to Specification. Heading H1K. Method of making semi-conductor devices, such as diodes, transistors and PNPN diodes, comprises placing into contact two plane surfaces, one surface being that of a first semiconductor body in which a rectifying junction is to be formed, the other surface being that of a second semi-conductor body of the same semiconductor material as the first body and acting as a source of impurities, and maintaining the two surfaces in contact while heating the bodies to a temperature below their fusion temperature so that impurity material diffuses across the contacting surfaces into the first semi-conductor body. The first body can be of one conductivity type and the second body of the opposite conductivity type so that a PN junction is formed in the first body. The first body can be of P-type silicon with boron as impurity, of about 10<SP>16</SP> atoms per cm.<SP>3</SP> and the second body of N-type silicon with phosphorus as impurity, of about 10<SP>20</SP> atoms per cm.<SP>3</SP>, and the heat treatment can be at 1200‹ C. to 1300‹ C. The two surfaces can be kept in contact during heating at a pressure sufficient to induce welding of the bodies at the contacting surfaces which are highly polished, the heating taking place in vacuum or in a reducing atmosphere. The heat treatment can be carried out in a neutral atmosphere. In a modification the heat treatment is carried out in an oxidizing atmosphere to produce a semi-conductor oxide layer between the two bodies which ensures that no welding of the two surfaces takes place, the semi-conductor material being one whose oxide is permeable to the impurity material which diffuses from the second body. The bodies can be plates arranged one on the other or bars arranged side-by-side and several devices can be formed in one operation. The first body can be of N-type silicon and the second body of silicon having a number of impurities of different diffusion speeds and conductivity types, e.g. boron and arsenic, those having the lower diffusion speeds being in higher concentration so that on heating more than one PN junction is formed in the first body to form, for example, the base and emitter regions of a transistor. A semiconductor diode can be formed by stacking three plane parallel plates of the same semiconductor material, the first plate containing P-type impurity, the second plate being of intrinsic conductivity and the third plate containing N-type impurity, and maintaining the plates in contact while beating them to a temperature below their fusion temperature so that P- and N-type impurities diffuse from the first and third plates respectively into opposite sides of the second plate to leave a thin layer of intrinsic semi-conductor material between the P- and N-type layers formed in the second plate to produce a diode with a high inverse voltage. Other steps in forming th diode can be as above described. Several specific examples are described including a PNPN diode in which the surface of the junctions is reduced from the outer surfaces.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR781989A FR1219276A (en) | 1958-12-18 | 1958-12-18 | Methods of preparing junctions in semiconductors and semiconductor devices obtained by these methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB957170A true GB957170A (en) | 1964-05-06 |
Family
ID=8709389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4220659A Expired GB957170A (en) | 1958-12-18 | 1959-12-11 | Methods of preparing junctions in semi-conductors and semi-conductor devices obtained by these methods |
Country Status (5)
| Country | Link |
|---|---|
| BE (2) | BE585784A (en) |
| CH (1) | CH364045A (en) |
| DE (1) | DE1160105B (en) |
| FR (1) | FR1219276A (en) |
| GB (1) | GB957170A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0061787B1 (en) * | 1981-03-02 | 1985-11-21 | BBC Aktiengesellschaft Brown, Boveri & Cie. | Process for doping semiconductor bodies for the production of semiconductor devices |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL82014C (en) * | 1949-11-30 | |||
| AT185893B (en) * | 1952-04-19 | 1956-06-11 | Ibm | Process for the production of P-N layers in semiconductors |
| US2743201A (en) * | 1952-04-29 | 1956-04-24 | Hughes Aircraft Co | Monatomic semiconductor devices |
| DE1036393B (en) * | 1954-08-05 | 1958-08-14 | Siemens Ag | Process for the production of two p-n junctions in semiconductor bodies, e.g. B. area transistors |
-
0
- BE BE569934D patent/BE569934A/xx unknown
-
1958
- 1958-12-18 FR FR781989A patent/FR1219276A/en not_active Expired
-
1959
- 1959-12-11 GB GB4220659A patent/GB957170A/en not_active Expired
- 1959-12-17 CH CH8190659A patent/CH364045A/en unknown
- 1959-12-17 DE DEI17389A patent/DE1160105B/en active Pending
- 1959-12-18 BE BE585784A patent/BE585784A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE569934A (en) | |
| DE1160105B (en) | 1963-12-27 |
| BE585784A (en) | 1960-06-20 |
| FR1219276A (en) | 1960-05-17 |
| CH364045A (en) | 1962-08-31 |
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