GB955720A - Improvements in or relating to switching circuit arrangements - Google Patents

Improvements in or relating to switching circuit arrangements

Info

Publication number
GB955720A
GB955720A GB1088161A GB1088161A GB955720A GB 955720 A GB955720 A GB 955720A GB 1088161 A GB1088161 A GB 1088161A GB 1088161 A GB1088161 A GB 1088161A GB 955720 A GB955720 A GB 955720A
Authority
GB
United Kingdom
Prior art keywords
transistor
load
ust
state
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1088161A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB955720A publication Critical patent/GB955720A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/58—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being tunnel diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L25/00—Baseband systems
    • H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
    • H04L25/20—Repeater circuits; Relay circuits
    • H04L25/24—Relay circuits using discharge tubes or semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Electronic Switches (AREA)

Abstract

955,720. Semi-conductor switching circuits. SIEMENS & HALSKE A.G. March 24, 1961 [March 24, 1960], No. 10881/61. Heading H3T. A three state switching circuit comprising a pair of switching devices each having a respective negative resistance element connected across its input, is characterized in that a control voltage having three levels can be applied to switch the state of one, or other or neither of the negative resistance elements. In Fig. 3, tunnel diodes D1, D2 are biased into their low voltage region in the absence of a signal Ust so that both transistors T1, T2 are cut off and no signal reaches load R3. If terminal a is made positive with respect to terminal b by a signal Ust sufficiently large to switch diode D2 to its high voltage state, transistor T2 will conduct to feed current from source U4 to load R3. If the polarity of Ust is reversed, transistor T1 conducts feeding current from source U3 to load R3, this current being in the opposite sense to that from U4. In a modification, Fig. 4, separate loads R4, R5 are used for each transistor, and the two transistors may then be of the same conductivity type.
GB1088161A 1960-03-24 1961-03-24 Improvements in or relating to switching circuit arrangements Expired GB955720A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES67715A DE1112112B (en) 1960-03-24 1960-03-24 Electronic switch with three stable positions

Publications (1)

Publication Number Publication Date
GB955720A true GB955720A (en) 1964-04-22

Family

ID=7499750

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1088161A Expired GB955720A (en) 1960-03-24 1961-03-24 Improvements in or relating to switching circuit arrangements

Country Status (3)

Country Link
CH (1) CH390992A (en)
DE (1) DE1112112B (en)
GB (1) GB955720A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3248568A (en) * 1963-03-14 1966-04-26 Ibm Tunnel diode level shift gate data storage device
GB1083321A (en) * 1964-03-18 1967-09-13 Solartron Electronic Group Improvements in or relating to poly-stable transistor circuits
DE1283889B (en) * 1966-10-20 1968-11-28 Loewe Opta Gmbh Circuit arrangement for comparing two DC voltages

Also Published As

Publication number Publication date
CH390992A (en) 1965-04-30
DE1112112B (en) 1961-08-03

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