GB9318821D0 - Electronic devices comprising thin-film transistors - Google Patents

Electronic devices comprising thin-film transistors

Info

Publication number
GB9318821D0
GB9318821D0 GB939318821A GB9318821A GB9318821D0 GB 9318821 D0 GB9318821 D0 GB 9318821D0 GB 939318821 A GB939318821 A GB 939318821A GB 9318821 A GB9318821 A GB 9318821A GB 9318821 D0 GB9318821 D0 GB 9318821D0
Authority
GB
United Kingdom
Prior art keywords
thin
electronic devices
film transistors
transistors
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB939318821A
Other versions
GB2283127A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronics UK Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics UK Ltd filed Critical Philips Electronics UK Ltd
Priority to GB9318821A priority Critical patent/GB2283127A/en
Publication of GB9318821D0 publication Critical patent/GB9318821D0/en
Publication of GB2283127A publication Critical patent/GB2283127A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
GB9318821A 1993-09-10 1993-09-10 Thin-film transistors with reduced leakage Withdrawn GB2283127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9318821A GB2283127A (en) 1993-09-10 1993-09-10 Thin-film transistors with reduced leakage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9318821A GB2283127A (en) 1993-09-10 1993-09-10 Thin-film transistors with reduced leakage

Publications (2)

Publication Number Publication Date
GB9318821D0 true GB9318821D0 (en) 1993-10-27
GB2283127A GB2283127A (en) 1995-04-26

Family

ID=10741830

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9318821A Withdrawn GB2283127A (en) 1993-09-10 1993-09-10 Thin-film transistors with reduced leakage

Country Status (1)

Country Link
GB (1) GB2283127A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100223901B1 (en) * 1996-10-11 1999-10-15 구자홍 Liquid crystal display device and manufacturing method
JP4593094B2 (en) * 2003-08-21 2010-12-08 日本電気株式会社 Liquid crystal display device and manufacturing method thereof
GB2460395A (en) * 2008-04-29 2009-12-02 Sharp Kk Thin film transistor and active matrix display

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4054894A (en) * 1975-05-27 1977-10-18 Rca Corporation Edgeless transistor

Also Published As

Publication number Publication date
GB2283127A (en) 1995-04-26

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)