GB925397A - Improvements in or relating to semi-conductor arrangements - Google Patents

Improvements in or relating to semi-conductor arrangements

Info

Publication number
GB925397A
GB925397A GB21314/59A GB2131459A GB925397A GB 925397 A GB925397 A GB 925397A GB 21314/59 A GB21314/59 A GB 21314/59A GB 2131459 A GB2131459 A GB 2131459A GB 925397 A GB925397 A GB 925397A
Authority
GB
United Kingdom
Prior art keywords
junction
zone
voltage
shunt
breakdown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21314/59A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB925397A publication Critical patent/GB925397A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K21/00—Fluid-delivery valves, e.g. self-closing valves
    • F16K21/04—Self-closing valves, i.e. closing automatically after operation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K47/00—Means in valves for absorbing fluid energy
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
GB21314/59A 1958-06-25 1959-06-22 Improvements in or relating to semi-conductor arrangements Expired GB925397A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES58714A DE1133472B (de) 1958-06-25 1958-06-25 Verfahren zum Herstellen einer Halbleiteranordnung und danach hergestellte Halbleiteranordnung
DES60920A DE1170556B (de) 1958-06-25 1958-12-11 Halbleiteranordnung mit vier hintereinander-liegenden halbleitenden Zonen, die abwechselnd p- und n-Stoerstellen enthalten

Publications (1)

Publication Number Publication Date
GB925397A true GB925397A (en) 1963-05-08

Family

ID=62597262

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21314/59A Expired GB925397A (en) 1958-06-25 1959-06-22 Improvements in or relating to semi-conductor arrangements

Country Status (6)

Country Link
US (1) US3119026A (enExample)
CH (1) CH373106A (enExample)
DE (2) DE1133472B (enExample)
FR (1) FR1227138A (enExample)
GB (1) GB925397A (enExample)
NL (3) NL6612203A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3254278A (en) * 1960-11-14 1966-05-31 Hoffman Electronics Corp Tunnel diode device
NL275617A (enExample) * 1961-03-10
GB2050694B (en) * 1979-05-07 1983-09-28 Nippon Telegraph & Telephone Electrode structure for a semiconductor device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1048359B (enExample) * 1952-07-22
US2655609A (en) * 1952-07-22 1953-10-13 Bell Telephone Labor Inc Bistable circuits, including transistors
DE958393C (de) * 1952-07-22 1957-02-21 Western Electric Co Signaluebertragungsanordnung mit einem Transistor mit vier Zonen verschiedenen Leitfaehigkeitstyps
NL182022B (nl) * 1952-10-31 Oval Eng Co Ltd Stroommeter met positieve verplaatsing.
US2857527A (en) * 1955-04-28 1958-10-21 Rca Corp Semiconductor devices including biased p+p or n+n rectifying barriers
NL99632C (enExample) * 1955-11-22
US2953693A (en) * 1957-02-27 1960-09-20 Westinghouse Electric Corp Semiconductor diode
BE552928A (enExample) * 1957-03-18
US3001895A (en) * 1957-06-06 1961-09-26 Ibm Semiconductor devices and method of making same

Also Published As

Publication number Publication date
US3119026A (en) 1964-01-21
NL122949C (enExample) 1900-01-01
DE1170556B (de) 1964-05-21
CH373106A (de) 1963-11-15
DE1133472B (de) 1962-07-19
FR1227138A (fr) 1960-08-18
DE1170556C2 (enExample) 1964-12-03
NL240386A (enExample) 1900-01-01
NL6612203A (enExample) 1966-10-25

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GB925397A (en) Improvements in or relating to semi-conductor arrangements