GB923408A - A method of preparing a seed crystal of semi-conductive material - Google Patents

A method of preparing a seed crystal of semi-conductive material

Info

Publication number
GB923408A
GB923408A GB614061A GB614061A GB923408A GB 923408 A GB923408 A GB 923408A GB 614061 A GB614061 A GB 614061A GB 614061 A GB614061 A GB 614061A GB 923408 A GB923408 A GB 923408A
Authority
GB
United Kingdom
Prior art keywords
seed
crystal
twin planes
tapered
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB614061A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB923408A publication Critical patent/GB923408A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

<PICT:0923408/III/1> In pulling a dendritic crystal from a supercooled melt using a seed crystal having a plurality of interior twin planes extending in the direction of pulling, the lower end of the seed is tapered so as to remove degenerate crystal boundaries and expose one or p both sides of the twin planes at the lower end. Tapering may be effected by mechanical abrasion, by chemical etching, or by feeding into a melt 2 DEG -10 DEG C. above its m.p. Fig. 5 shows a tapered seed having three interior twin planes. The untapered seed may be produced by dipping a randomly orientated crystal with or without twin planes into a supercooled melt (Figs. 2 and 3, not shown) or may be cut from a pulled dendrite (Fig. 4, not shown). In a modification, tapering may be produced during a prior pulling operation as disclosed in Specification 915,908 and a tapered seed cut from the pulled dendrite. Specifications 913,674 and 923,409 also are referred to.
GB614061A 1960-03-21 1961-02-20 A method of preparing a seed crystal of semi-conductive material Expired GB923408A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1638560A 1960-03-21 1960-03-21

Publications (1)

Publication Number Publication Date
GB923408A true GB923408A (en) 1963-04-10

Family

ID=21776852

Family Applications (1)

Application Number Title Priority Date Filing Date
GB614061A Expired GB923408A (en) 1960-03-21 1961-02-20 A method of preparing a seed crystal of semi-conductive material

Country Status (2)

Country Link
DE (1) DE1211594B (en)
GB (1) GB923408A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6197108B1 (en) 1997-05-21 2001-03-06 Shin-Etsu Handotai, Co. Ltd. Silicon seed crystal, method of manufacturing the same, and method of manufacturing silicon monocrystal through use of the seed crystal

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1048638B (en) * 1957-07-02 1959-01-15 Siemens &. Halske Aktiengesellschaft, Berlin und München Process for the production of semiconductor single crystals, in particular silicon, by thermal decomposition or reduction

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6197108B1 (en) 1997-05-21 2001-03-06 Shin-Etsu Handotai, Co. Ltd. Silicon seed crystal, method of manufacturing the same, and method of manufacturing silicon monocrystal through use of the seed crystal

Also Published As

Publication number Publication date
DE1211594B (en) 1966-03-03

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