GB913677A - Crystal growing process - Google Patents

Crystal growing process

Info

Publication number
GB913677A
GB913677A GB41749/60A GB4174960A GB913677A GB 913677 A GB913677 A GB 913677A GB 41749/60 A GB41749/60 A GB 41749/60A GB 4174960 A GB4174960 A GB 4174960A GB 913677 A GB913677 A GB 913677A
Authority
GB
United Kingdom
Prior art keywords
seed
melt
group
crystal
iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB41749/60A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB913677A publication Critical patent/GB913677A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/18—Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Abstract

<PICT:0913677/III/1> <PICT:0913677/III/2> In pulling a dentritic crystal from a supercooled melt using a seed crystal having two or more interior twin planes and orientated as shown in Fig. 2, a seed crystal with its tip premelted is contacted with a pre-supercooled melt. A single dendritic crystal is thereby produced as an axial extension of the seed crystal. Materials specified are germanium, silicon, Group III-Group V compounds, and Group II-Group VI compounds. Semi-conductor materials may be intrinsic or doped (n- or p-type). The melt may be supercooled 1 DEG -40 DEG C. Pulling may be effected in an atmosphere of argon, helium, hydrogen, or nitrogen. The pulling rate may be 6,25-62,5 cm./min. The premelting may be effected by the passage of a gas discharge between the seed and the melt. Direct or alternating current may be employed. In the former case, the seed may be the anode or cathode. The distance between the seed and melt during discharge may be 1/8 inch. The current may be 1-10 milliamperes and the voltage 300-1000 volts. As shown in Fig. 1, a gas discharge is formed between a seed 26 (as anode) in an electrically conducting holder 28 and a melt 18 (as cathode) in a graphite crucible 16, the holder 28 and crucible 16 being connected by a circuit comprising bush contact 54, direct current power source 44, impedance member 48, switch 50, and crucible support 14. The impedance member may be a vacuum tube triode with plate and grid connected together to form a diode. Specification 913,674 is referred to.
GB41749/60A 1960-01-18 1960-12-05 Crystal growing process Expired GB913677A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2982A US3058915A (en) 1960-01-18 1960-01-18 Crystal growing process

Publications (1)

Publication Number Publication Date
GB913677A true GB913677A (en) 1962-12-28

Family

ID=21703497

Family Applications (1)

Application Number Title Priority Date Filing Date
GB41749/60A Expired GB913677A (en) 1960-01-18 1960-12-05 Crystal growing process

Country Status (4)

Country Link
US (1) US3058915A (en)
CH (1) CH412817A (en)
DE (1) DE1222022B (en)
GB (1) GB913677A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3980438A (en) * 1975-08-28 1976-09-14 Arthur D. Little, Inc. Apparatus for forming semiconductor crystals of essentially uniform diameter

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL301226A (en) * 1962-12-03
US3251655A (en) * 1963-09-27 1966-05-17 Westinghouse Electric Corp Apparatus for producing crystalline semiconductor material
US4330359A (en) * 1981-02-10 1982-05-18 Lovelace Alan M Administrator Electromigration process for the purification of molten silicon during crystal growth
DE3479523D1 (en) * 1983-09-19 1989-09-28 Fujitsu Ltd Method for growing multicomponent compound semiconductor crystals
GB8427915D0 (en) * 1984-11-05 1984-12-12 Tsl Thermal Syndicate Plc Vitreous silica products
JP3132094B2 (en) * 1991-10-22 2001-02-05 日立金属株式会社 Single crystal manufacturing method and single crystal manufacturing apparatus
WO2004035877A2 (en) * 2002-10-18 2004-04-29 Evergreen Solar, Inc. Method and apparatus for crystal growth
US6814802B2 (en) * 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible
WO2006029872A1 (en) * 2004-09-17 2006-03-23 Universität Hamburg Radiotransparent component and method for the production thereof
CN106948004A (en) * 2009-09-02 2017-07-14 Gtat公司 Improved under adjusted pressure using the high-temperature technology of helium
CN111610204B (en) * 2019-02-25 2021-06-29 浙江大学 Method for carrying out in-situ mechanical test on nano twin sample with twin orientation determination function

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
GB769426A (en) * 1953-08-05 1957-03-06 Ass Elect Ind Improvements relating to the manufacture of crystalline material
US2842467A (en) * 1954-04-28 1958-07-08 Ibm Method of growing semi-conductors
NL218610A (en) * 1956-07-02
NL212548A (en) * 1956-11-28

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3980438A (en) * 1975-08-28 1976-09-14 Arthur D. Little, Inc. Apparatus for forming semiconductor crystals of essentially uniform diameter

Also Published As

Publication number Publication date
DE1222022B (en) 1966-08-04
US3058915A (en) 1962-10-16
CH412817A (en) 1966-05-15

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