GB9110667D0 - Semiconductor intergrated circuit device - Google Patents

Semiconductor intergrated circuit device

Info

Publication number
GB9110667D0
GB9110667D0 GB919110667A GB9110667A GB9110667D0 GB 9110667 D0 GB9110667 D0 GB 9110667D0 GB 919110667 A GB919110667 A GB 919110667A GB 9110667 A GB9110667 A GB 9110667A GB 9110667 D0 GB9110667 D0 GB 9110667D0
Authority
GB
United Kingdom
Prior art keywords
circuit device
intergrated circuit
melted
semiconductor intergrated
fuse element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB919110667A
Other versions
GB2245099B (en
GB2245099A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of GB9110667D0 publication Critical patent/GB9110667D0/en
Publication of GB2245099A publication Critical patent/GB2245099A/en
Application granted granted Critical
Publication of GB2245099B publication Critical patent/GB2245099B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Logic Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

The invention provides a semi-conductor integrated circuit device having a fuse portion with at least one fuse element (4) which can be melted on the basis of an applied voltage or current. An adjustment portion (10) is also provided for adjusting the operation properties of an internal circuit of the device, the adjustment portion being arranged to supply as output adjusting signals presenting at least two different stages depending on whether the fuse element is melted or not. <IMAGE>
GB9110667A 1990-05-22 1991-05-16 Semi-conductor intergrated circuit device Expired - Fee Related GB2245099B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP13226390 1990-05-22
JP26409490 1990-10-02
JP7877891A JP3141417B2 (en) 1990-05-22 1991-04-11 Semiconductor integrated circuit device and method of manufacturing the same

Publications (3)

Publication Number Publication Date
GB9110667D0 true GB9110667D0 (en) 1991-07-03
GB2245099A GB2245099A (en) 1991-12-18
GB2245099B GB2245099B (en) 1995-01-18

Family

ID=27302802

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9110667A Expired - Fee Related GB2245099B (en) 1990-05-22 1991-05-16 Semi-conductor intergrated circuit device

Country Status (3)

Country Link
JP (1) JP3141417B2 (en)
KR (1) KR910020880A (en)
GB (1) GB2245099B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0563852A1 (en) * 1992-04-02 1993-10-06 Siemens Aktiengesellschaft Zag fuse for reduced blow-current applications
TW247368B (en) * 1993-09-29 1995-05-11 Seiko Epuson Co Current regulating semiconductor integrate circuit device and fabrication method of the same
JP2003036673A (en) 2001-07-24 2003-02-07 Mitsubishi Electric Corp Semiconductor memory
JP2005039220A (en) * 2003-06-26 2005-02-10 Nec Electronics Corp Semiconductor device
DE102004014925B4 (en) 2004-03-26 2016-12-29 Infineon Technologies Ag Electronic circuit arrangement
JP4854713B2 (en) * 2008-07-22 2012-01-18 株式会社リコー Manufacturing method of semiconductor integrated circuit having voltage setting circuit
JP2012033972A (en) * 2011-11-04 2012-02-16 Renesas Electronics Corp Semiconductor device

Also Published As

Publication number Publication date
KR910020880A (en) 1991-12-20
GB2245099B (en) 1995-01-18
GB2245099A (en) 1991-12-18
JP3141417B2 (en) 2001-03-05
JPH04218935A (en) 1992-08-10

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20100516