GB907666A - - Google Patents
Info
- Publication number
- GB907666A GB907666A GB907666DA GB907666A GB 907666 A GB907666 A GB 907666A GB 907666D A GB907666D A GB 907666DA GB 907666 A GB907666 A GB 907666A
- Authority
- GB
- United Kingdom
- Prior art keywords
- etching
- electrode
- capacitor
- anodized
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 abstract 6
- 238000005530 etching Methods 0.000 abstract 6
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 abstract 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 abstract 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract 2
- -1 AlCl 3 Chemical class 0.000 abstract 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000007743 anodising Methods 0.000 abstract 2
- 239000003792 electrolyte Substances 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- 150000004820 halides Chemical class 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- QXDYIBHUQHUJJI-UHFFFAOYSA-N nitrobenzene phenol Chemical compound OC1=CC=CC=C1.[O-][N+](=O)C1=CC=CC=C1 QXDYIBHUQHUJJI-UHFFFAOYSA-N 0.000 abstract 1
- 239000011255 nonaqueous electrolyte Substances 0.000 abstract 1
- 235000006408 oxalic acid Nutrition 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
907,666. Anodizing and etching a film-forming metal; capacitors. WESTERN ELECTRIC CO. Aug. 18, 1960 [Sept. 21, 1959], No. 28635/60. Drawings to Specification. Classes 37 and 41. A method of making a capacitor having an improved dielectric oxide layer, e.g. a printed capacitor, comprises (a) anodizing a first electrode of a film-forming metal such as Ta, Al, Nb, Hf or Zr to form a dielectric oxide film thereover; (b) etching the metal at positions where there are irregularities or defects in the oxide film by immersing the electrode in a non- aqueous electrolyte comprising ions of at least one halide and biasing the electrode anodically; (c) reanodizing the electrode to oxidize the etched parts; and (d) disposing a second electrode such that the dielectric film is interposed between the first and second electrodes whereby the first and second electrodes and the dielectric therebetween form the capacitor. The etching electrolyte may employ, for example, CH 3 OH, C 2 H 5 OH, acetone, nitrobenzene phenol or aniline as solvent and salts such as AlCl 3 , LiCl NH 4 Br, KF, NaI and NaF as sources of halide ions. The etching current should be in the range 1-10 mA per sq. cm. and the etching may be carried out in one step at a voltage above the operating voltage of the capacitor being produced or in a series of steps at increasing voltages to a voltage above the operating voltage with reanodizing after each step. In one example of making a capacitor, Ta was sputtered on to a glass substrate and the Ta anodized in an electrolyte containing oxalic acid, water and ethylene glycol. Etching was in a solution of LiCl in CH 3 OH. After reanodizing, a counter electrode of Au was deposited in contact with the anodized surface. In other examples, solid electrolytic condensers have anodized Nb anodes e.g. coated with MnO 2 and wet electrolytics have anodized porous A1 anodes. Specifications 747,051 and 863,596 are referred to.
Publications (1)
Publication Number | Publication Date |
---|---|
GB907666A true GB907666A (en) | 1900-01-01 |
Family
ID=1753328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB907666D Expired GB907666A (en) |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB907666A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3314100A1 (en) * | 1982-04-30 | 1983-11-03 | N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven | METHOD FOR PRODUCING AN INTEGRATED CONDENSER AND AN ARRANGEMENT OBTAINED IN THIS WAY |
-
0
- GB GB907666D patent/GB907666A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3314100A1 (en) * | 1982-04-30 | 1983-11-03 | N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven | METHOD FOR PRODUCING AN INTEGRATED CONDENSER AND AN ARRANGEMENT OBTAINED IN THIS WAY |
US4481283A (en) * | 1982-04-30 | 1984-11-06 | U.S. Philips Corporation | Method of manufacturing an integrated capacitor and device obtained by this method |
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