GB907164A - Improvements in or relating to the doping of semi-conductor crystals - Google Patents
Improvements in or relating to the doping of semi-conductor crystalsInfo
- Publication number
- GB907164A GB907164A GB2738760A GB2738760A GB907164A GB 907164 A GB907164 A GB 907164A GB 2738760 A GB2738760 A GB 2738760A GB 2738760 A GB2738760 A GB 2738760A GB 907164 A GB907164 A GB 907164A
- Authority
- GB
- United Kingdom
- Prior art keywords
- tube
- tantalum
- vessel
- doping
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES64342A DE1100820B (de) | 1959-08-07 | 1959-08-07 | Vorrichtung zur Herstellung von Halbleiter-anordnungen durch Dotieren von Halbleiterkoerpern aus der Gasphase und Verfahren mittels einer solchen Vorrichtung |
Publications (1)
Publication Number | Publication Date |
---|---|
GB907164A true GB907164A (en) | 1962-10-03 |
Family
ID=7497114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2738760A Expired GB907164A (en) | 1959-08-07 | 1960-08-08 | Improvements in or relating to the doping of semi-conductor crystals |
Country Status (4)
Country | Link |
---|---|
CH (1) | CH387803A (de) |
DE (1) | DE1100820B (de) |
GB (1) | GB907164A (de) |
NL (1) | NL254549A (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4258658A (en) * | 1978-11-13 | 1981-03-31 | Siemens Aktiengesellschaft | CVD Coating device for small parts |
FR2542432A1 (fr) * | 1983-03-08 | 1984-09-14 | Centre Nat Etd Spatiales | Dispositif chauffant transparent comprenant au moins deux zones a temperatures differentes |
CN101942697A (zh) * | 2010-08-23 | 2011-01-12 | 清华大学 | 光伏多晶硅铸锭炉测温热电偶套管抽真空装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2742383A (en) * | 1952-08-09 | 1956-04-17 | Hughes Aircraft Co | Germanium junction-type semiconductor devices |
NL215875A (de) * | 1956-05-18 | |||
DE1040799B (de) * | 1957-03-15 | 1958-10-09 | Telefunken Gmbh | Anordnung zum Hochreinigen und/oder Dopen eines Halbleiterkoerpers |
-
0
- NL NL254549D patent/NL254549A/xx unknown
-
1959
- 1959-08-07 DE DES64342A patent/DE1100820B/de active Pending
-
1960
- 1960-08-02 CH CH875960A patent/CH387803A/de unknown
- 1960-08-08 GB GB2738760A patent/GB907164A/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4258658A (en) * | 1978-11-13 | 1981-03-31 | Siemens Aktiengesellschaft | CVD Coating device for small parts |
FR2542432A1 (fr) * | 1983-03-08 | 1984-09-14 | Centre Nat Etd Spatiales | Dispositif chauffant transparent comprenant au moins deux zones a temperatures differentes |
EP0119130A1 (de) * | 1983-03-08 | 1984-09-19 | Centre National D'etudes Spatiales | Transparente Heizvorrichtung mit wenigstens zwei Zonen mit verschiedenen Temperaturen |
CN101942697A (zh) * | 2010-08-23 | 2011-01-12 | 清华大学 | 光伏多晶硅铸锭炉测温热电偶套管抽真空装置 |
CN101942697B (zh) * | 2010-08-23 | 2012-11-14 | 清华大学 | 光伏多晶硅铸锭炉测温热电偶套管抽真空装置 |
Also Published As
Publication number | Publication date |
---|---|
NL254549A (de) | |
CH387803A (de) | 1965-02-15 |
DE1100820B (de) | 1961-03-02 |
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