Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
  • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
  • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
  • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
  • H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
  • H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
  • H03K4/83—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices with more than two PN junctions or with more than three electrodes or more than one electrode connected to the same conductivity region
  • H03K4/84—Generators in which the semiconductor device is conducting during the fly-back part of the cycle
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
  • H10D12/211—Gated diodes
  • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D99/00—Subject matter not provided for in other groups of this subclass
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

• Electrodes Of Semiconductors (AREA)
• Emergency Protection Circuit Devices (AREA)
• Thermistors And Varistors (AREA)
• Junction Field-Effect Transistors (AREA)
• Thyristors (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=26641634

Family Applications (2)

Family Applications After (1)

Country Status (6)

Families Citing this family (11)

Family Cites Families (9)

• 0
  • NL NL112132D patent/NL112132C/xx active
  • NL NL224962D patent/NL224962A/xx unknown
  • NL NL238689D patent/NL238689A/xx unknown
• 1959
  • 1959-02-11 DE DE19591414252 patent/DE1414252A1/de active Pending
  • 1959-02-12 US US792902A patent/US3081404A/en not_active Expired - Lifetime
  • 1959-02-12 CH CH6944059A patent/CH386566A/de unknown
  • 1959-02-12 FR FR786514A patent/FR1225032A/fr not_active Expired
  • 1959-02-13 GB GB5076/59A patent/GB905398A/en not_active Expired
• 1960
  • 1960-03-17 US US15692A patent/US3169197A/en not_active Expired - Lifetime
  • 1960-04-25 DE DE19601414927 patent/DE1414927A1/de active Pending
  • 1960-04-27 GB GB14777/60A patent/GB955311A/en not_active Expired

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