GB904106A - Improvements in or relating to rectifiers - Google Patents
Improvements in or relating to rectifiersInfo
- Publication number
- GB904106A GB904106A GB3014060A GB3014060A GB904106A GB 904106 A GB904106 A GB 904106A GB 3014060 A GB3014060 A GB 3014060A GB 3014060 A GB3014060 A GB 3014060A GB 904106 A GB904106 A GB 904106A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cup
- plate
- pill
- weight
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000956 alloy Substances 0.000 abstract 3
- 229910045601 alloy Inorganic materials 0.000 abstract 3
- 239000006187 pill Substances 0.000 abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 229910002804 graphite Inorganic materials 0.000 abstract 2
- 239000010439 graphite Substances 0.000 abstract 2
- 239000011261 inert gas Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000004090 dissolution Methods 0.000 abstract 1
- 239000000945 filler Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Coating With Molten Metal (AREA)
- Rectifiers (AREA)
Abstract
904,106. Semi-conductor rectifiers. BOSCH G.m.b.H., ROBERT. Sept. 1, 1960 [Sept. 4, 1959], No. 30140/60. Class 37. In a rectifier comprising a semi-conductor of N-type Ge having an Sb concentration between 2.10<SP>-7</SP>% and 1.10<SP>-5</SP>% by weight, a PN junction is formed by alloying into the Ge a quantity of In having an initial purity of 99.999% and having added thereto Cu, in amount between 1.10<SP>-6</SP>% and 1% by weight. It is stated the enhanced forward conductivity of the rectifier due to the presence of Cu more than off-sets an increase in reverse current, to achieve a reduced operating temperature. The Cu may be added to the In during the alloying step or subsequently. The current density at the PN junction should not exceed 2A/sq. mm., and should preferably be from 0.5 to 1.0 A/sq. mm. In Fig. 1, a Cu cup 10, whose internal walls are covered with a Ni layer 15, is held in a graphite mould (not shown), and a tin foil 11 and a plate 12 of N-type monocrystalline Ge having an Sb concentration of 1.10<SP>-6</SP>% by weight are placed in the cup. A second graphite mould (not shown), which is then telescoped into the cup, receives in a central bore a pill 13 of In of 99.999% purity and a Cu wire 14, the end of which adjacent the In is pointed. The whole is then heated in a vacuum or inert gas to about 520‹ C. to alloy In into the Ge and to allow the dissolution and diffusion into the alloy zone of Cu atoms within the permitted concentration limits. When the device is cool it is sealed by a plate 16 and a resin filler 17. In a modification, Fig. 4, the In pill 13 is alloyed into the Ge plate 12 at about 550‹ C. while a coating of In is applied at the same temperature to the end face of a Cu pin 24 having the same diameter as the In pill. The said end face is next soldered to the In layer on the Ge plate at between 200‹ C. and 400‹ C., say about 300‹ C., in vacuo or an inert gas; during this stage Cu atoms, previously dissolved in the In coating, diffuse into the alloy zone. The cup 10 and the part of pin 24 external thereto may be provided with cooling ribs.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEB54676A DE1127481B (en) | 1959-09-04 | 1959-09-04 | Power rectifier with a semiconductor body made of germanium doped with antimony and process for its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB904106A true GB904106A (en) | 1962-08-22 |
Family
ID=6970698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3014060A Expired GB904106A (en) | 1959-09-04 | 1960-09-01 | Improvements in or relating to rectifiers |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1127481B (en) |
| GB (1) | GB904106A (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL100884C (en) * | 1953-05-28 | 1900-01-01 | ||
| DE1040697B (en) * | 1955-03-30 | 1958-10-09 | Siemens Ag | Method for doping semiconductor bodies |
| DE1058632B (en) * | 1955-12-03 | 1959-06-04 | Deutsche Bundespost | Method for the arbitrary reduction of the blocking resistance of an alloy electrode of semiconductor arrangements |
| NL113333C (en) * | 1957-09-19 |
-
1959
- 1959-09-04 DE DEB54676A patent/DE1127481B/en active Pending
-
1960
- 1960-09-01 GB GB3014060A patent/GB904106A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1127481B (en) | 1962-04-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB807959A (en) | Fused junction semiconductor devices | |
| GB967263A (en) | A process for use in the production of a semi-conductor device | |
| GB1004020A (en) | Improvements in or relating to the mounting of electrical components | |
| GB820190A (en) | Silicon power rectifier | |
| US2835615A (en) | Method of producing a semiconductor alloy junction | |
| US3239376A (en) | Electrodes to semiconductor wafers | |
| GB797304A (en) | Improvements in or relating to the manufacture of semiconductor devices | |
| GB904106A (en) | Improvements in or relating to rectifiers | |
| US2874083A (en) | Transistor construction | |
| GB801713A (en) | Improvements relating to semi-conductor devices | |
| US3060018A (en) | Gold base alloy | |
| US2977262A (en) | Semiconductor devices including gallium-containing electrodes | |
| GB855382A (en) | Method of producing a p-n junction in a crystalline semiconductor | |
| GB789931A (en) | Improvements in devices comprising semi-conductors | |
| US3224069A (en) | Method of fabricating semiconductor devices | |
| GB936886A (en) | Sealed semiconductor devices | |
| GB1095047A (en) | Semi-conductor devices and the manufacture thereof | |
| JPS5239372A (en) | Electrode structure of semiconductor device | |
| JPS54153573A (en) | Manufacture for compound semiconductor device | |
| GB864121A (en) | Improvements in or relating to semi-conductor devices | |
| JPS5348670A (en) | Electrode structure of semiconductor element | |
| JPS5428581A (en) | Manufacture of semiconductor device | |
| US3124862A (en) | Alloy double-diffused semiconductor | |
| JPS53108778A (en) | Transistor | |
| JPS5552227A (en) | Semiconductor electrode structure |