GB9008880D0 - Heterojunction bipolar transistor and optical waveguide device for monolithic integration - Google Patents

Heterojunction bipolar transistor and optical waveguide device for monolithic integration

Info

Publication number
GB9008880D0
GB9008880D0 GB909008880A GB9008880A GB9008880D0 GB 9008880 D0 GB9008880 D0 GB 9008880D0 GB 909008880 A GB909008880 A GB 909008880A GB 9008880 A GB9008880 A GB 9008880A GB 9008880 D0 GB9008880 D0 GB 9008880D0
Authority
GB
United Kingdom
Prior art keywords
optical waveguide
bipolar transistor
waveguide device
heterojunction bipolar
monolithic integration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB909008880A
Other versions
GB2243241A (en
GB2243241B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Research Caswell Ltd
Original Assignee
Plessey Research Caswell Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Research Caswell Ltd filed Critical Plessey Research Caswell Ltd
Priority to GB9008880A priority Critical patent/GB2243241B/en
Publication of GB9008880D0 publication Critical patent/GB9008880D0/en
Publication of GB2243241A publication Critical patent/GB2243241A/en
Application granted granted Critical
Publication of GB2243241B publication Critical patent/GB2243241B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
GB9008880A 1990-04-20 1990-04-20 Heterojunction bipolar transistor and optical waveguide device for monolithic integration Expired - Fee Related GB2243241B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9008880A GB2243241B (en) 1990-04-20 1990-04-20 Heterojunction bipolar transistor and optical waveguide device for monolithic integration

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9008880A GB2243241B (en) 1990-04-20 1990-04-20 Heterojunction bipolar transistor and optical waveguide device for monolithic integration

Publications (3)

Publication Number Publication Date
GB9008880D0 true GB9008880D0 (en) 1990-06-20
GB2243241A GB2243241A (en) 1991-10-23
GB2243241B GB2243241B (en) 1994-03-16

Family

ID=10674711

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9008880A Expired - Fee Related GB2243241B (en) 1990-04-20 1990-04-20 Heterojunction bipolar transistor and optical waveguide device for monolithic integration

Country Status (1)

Country Link
GB (1) GB2243241B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117747691A (en) * 2023-11-22 2024-03-22 广州市南沙区北科光子感知技术研究院 Bicolor barrier type GaSb-based InAs/InAsSb heterojunction photoelectric transistor and preparation method thereof

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268315A (en) * 1992-09-04 1993-12-07 Tektronix, Inc. Implant-free heterojunction bioplar transistor integrated circuit process
FR2820890A1 (en) * 2001-02-15 2002-08-16 Cit Alcatel MONOLITHIC INTEGRATED OPTICAL COMPONENT HAVING A BIPOLAR HETEROJUNCTION TRANSISTOR
US6990257B2 (en) 2001-09-10 2006-01-24 California Institute Of Technology Electronically biased strip loaded waveguide
US7120338B2 (en) 2001-09-10 2006-10-10 California Institute Of Technology Tuning the index of a waveguide structure
US7082235B2 (en) 2001-09-10 2006-07-25 California Institute Of Technology Structure and method for coupling light between dissimilar waveguides
KR100469642B1 (en) * 2002-05-31 2005-02-02 한국전자통신연구원 Photoreceiver of wavelength selective detection and method of manufacturing the same
US7010208B1 (en) 2002-06-24 2006-03-07 Luxtera, Inc. CMOS process silicon waveguides
US7826688B1 (en) 2005-10-21 2010-11-02 Luxtera, Inc. Enhancing the sensitivity of resonant optical modulating and switching devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2547677B1 (en) * 1983-06-17 1986-10-31 Ankri David BIPOLAR DOUBLE HETEROJUNCTION TRANSISTOR COMPATIBLE WITH OPTOELECTRONIC COMPONENTS FOR MONOLITHIC INTEGRATION
JPS6140081A (en) * 1984-07-31 1986-02-26 Sharp Corp Photo-semiconductor device
US4899200A (en) * 1988-06-03 1990-02-06 Regents Of The University Of Minnesota Novel high-speed integrated heterostructure transistors, photodetectors, and optoelectronic circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117747691A (en) * 2023-11-22 2024-03-22 广州市南沙区北科光子感知技术研究院 Bicolor barrier type GaSb-based InAs/InAsSb heterojunction photoelectric transistor and preparation method thereof

Also Published As

Publication number Publication date
GB2243241A (en) 1991-10-23
GB2243241B (en) 1994-03-16

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19970420