GB8921445D0 - Electrically-programmable semiconductor memories - Google Patents

Electrically-programmable semiconductor memories

Info

Publication number
GB8921445D0
GB8921445D0 GB898921445A GB8921445A GB8921445D0 GB 8921445 D0 GB8921445 D0 GB 8921445D0 GB 898921445 A GB898921445 A GB 898921445A GB 8921445 A GB8921445 A GB 8921445A GB 8921445 D0 GB8921445 D0 GB 8921445D0
Authority
GB
United Kingdom
Prior art keywords
electrically
semiconductor memories
programmable semiconductor
programmable
memories
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB898921445A
Other versions
GB2229858A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB8921445D0 publication Critical patent/GB8921445D0/en
Priority to EP90200702A priority Critical patent/EP0393737B1/en
Priority to DE69019872T priority patent/DE69019872T2/en
Priority to AT90200702T priority patent/ATE123590T1/en
Priority to KR1019900004144A priority patent/KR0185978B1/en
Priority to HU901878A priority patent/HUT56459A/en
Priority to JP8729490A priority patent/JP2972954B2/en
Publication of GB2229858A publication Critical patent/GB2229858A/en
Priority to US07/745,992 priority patent/US5216269A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
GB8921445A 1989-03-31 1989-09-22 Electrically-programmable semiconductor memories Withdrawn GB2229858A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
EP90200702A EP0393737B1 (en) 1989-03-31 1990-03-26 Electrically-programmable semiconductor memories
DE69019872T DE69019872T2 (en) 1989-03-31 1990-03-26 Electrically programmable semiconductor memories.
AT90200702T ATE123590T1 (en) 1989-03-31 1990-03-26 ELECTRICALLY PROGRAMMABLE SEMICONDUCTOR MEMORY.
KR1019900004144A KR0185978B1 (en) 1989-03-31 1990-03-28 Electrically-programmable semiconductor memories with buried injector region
HU901878A HUT56459A (en) 1989-03-31 1990-03-28 Elelctrically programmable semiconductor memory
JP8729490A JP2972954B2 (en) 1989-03-31 1990-03-30 Programmable semiconductor memory
US07/745,992 US5216269A (en) 1989-03-31 1991-08-08 Electrically-programmable semiconductor memories with buried injector region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB898907262A GB8907262D0 (en) 1989-03-31 1989-03-31 Electrically-programmable semiconductor memories

Publications (2)

Publication Number Publication Date
GB8921445D0 true GB8921445D0 (en) 1989-11-08
GB2229858A GB2229858A (en) 1990-10-03

Family

ID=10654235

Family Applications (2)

Application Number Title Priority Date Filing Date
GB898907262A Pending GB8907262D0 (en) 1989-03-31 1989-03-31 Electrically-programmable semiconductor memories
GB8921445A Withdrawn GB2229858A (en) 1989-03-31 1989-09-22 Electrically-programmable semiconductor memories

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB898907262A Pending GB8907262D0 (en) 1989-03-31 1989-03-31 Electrically-programmable semiconductor memories

Country Status (2)

Country Link
KR (1) KR0185978B1 (en)
GB (2) GB8907262D0 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163985A (en) * 1977-09-30 1979-08-07 The United States Of America As Represented By The Secretary Of The Air Force Nonvolatile punch through memory cell with buried n+ region in channel

Also Published As

Publication number Publication date
GB8907262D0 (en) 1989-05-17
KR0185978B1 (en) 1999-03-20
KR900015338A (en) 1990-10-26
GB2229858A (en) 1990-10-03

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)